TO247-3 相關產品
零件號 | 描述 | 製造商 | 生命週期狀態 | 貨物週期 | 有存貨 | 操作 |
---|---|---|---|---|---|---|
IXFH46N65X2 | DiscMSFT NChUltraJnctn X2Class TO-247AD | Ixys Integrated Circuits Division | 3~7 Days | 7,066 | ||
IXTX200N10L2 | N-type power MOSFET with 100V voltage rating and 200A current rating | Ixys Integrated Circuits Division | ACTIVE | 3~7 Days | 3,706 | |
IRG4PC50UDPBF | Compact design enables dense packaging in demanding applications | Infineon Technologies | 3~7 Days | 5,544 | ||
IXFH75N10 | TO-247AD MOSFETs ROHS | Ixys Integrated Circuits Division | 3~7 Days | 6,748 | ||
IXFH20N80P | The TO-247-3 package provides easy mounting and efficient heat dissipation for reliable operation | Ixys Integrated Circuits Division | ACTIVE | 3~7 Days | 5,888 | |
IXFH60N50P3 | PolarP3 technology enhances performance of this 500V MOSFET | Ixys Integrated Circuits Division | 3~7 Days | 3,961 | ||
IXFH6N100 | TO-247AD ROHS MOSFETs | Ixys Integrated Circuits Division | Active | 3~7 Days | 5,714 | |
IXKR40N60C | Product Summary: The IXKR40N60C is a high-voltage N-channel MOSFET designed for power applications | Ixys Integrated Circuits Division | 3~7 Days | 4,501 | ||
IXTH30N60L2 | Transistor MOSFET N-channel with 600V and 30A rating in TO-247AD package | Ixys Integrated Circuits Division | Active | 3~7 Days | 3,432 | |
IXTX32P60P | MOSFET capable of handling 32 Amps and 600V with a resistance of 0.350 | Ixys Integrated Circuits Division | Active | 3~7 Days | 3,153 | |
IXFX230N20T | Field-effect transistor capable of handling 230 amps at 200 volts | Ixys Integrated Circuits Division | Active | 3~7 Days | 5,624 | |
MSC750SMA170B | MOSFET UNRLS, FG, SIC MOSFET, TO-247 | Microchip Technology | ACTIVE | 3~7 Days | 4,838 | |
IXGH48N60C3 | Insulated Gate Bipolar Transistor with 48A and 600V specifications | Ixys Integrated Circuits Division | 3~7 Days | 5,293 | ||
IXBH12N300 | TO-247AD package with 3 pins and 3 tabs | Ixys Integrated Circuits Division | 3~7 Days | 4,222 | ||
VS-40TPS12-M3 | SCR 1200V 55A(RMS) 600A 3-Pin(3+Tab) TO-247AC Tube | Siliconix | 3~7 Days | 5,508 | ||
SIHG20N50C-E3 | The specifications of SIHG20N50C-E3 include its TO-247AC-3 package type | Siliconix | ACTIVE | 3~7 Days | 8,638 | |
IRFPS40N50L | Trans MOSFET N-CH 500V 46A 3-Pin Super-247 | Siliconix | 3~7 Days | 6,478 | ||
IRFPG50PBF | Trans MOSFET N-CH 1KV 6.1A 3-Pin(3+Tab) TO-247AC | Siliconix | 3~7 Days | 3,890 | ||
IRFPS37N50APBF | Trans MOSFET N-CH 500V 36A 3-Pin Super-247 | Infineon Technologies | 3~7 Days | 7,950 | ||
IRFPE50PBF | Trans MOSFET N-CH 800V 7.8A 3-Pin(3+Tab) TO-247AC | Siliconix | Active | 3~7 Days | 7,423 | |
IRFP32N50KPBF | Field-effect transistor with N-channel design suitable for high voltage applications | Siliconix | Active | 3~7 Days | 7,499 | |
IRFP250PBF | Trans MOSFET N-CH 200V 30A 3-Pin(3+Tab) TO-247AC | Siliconix | Active | 3~7 Days | 3,542 | |
IRFP240PBF | Trans MOSFET N-CH 200V 20A 3-Pin(3+Tab) TO-247AC | Siliconix | Active | 3~7 Days | 4,052 | |
IRFP22N50APBF | Trans MOSFET N-CH 500V 22A 3-Pin(3+Tab) TO-247AC | Siliconix | 3~7 Days | 3,635 | ||
IRFP064PBF | TO-247AC package with 3 pins and a tab for easy mounting | Siliconix | 3~7 Days | 7,168 | ||
MJW21195G | Trans GP BJT PNP 250V 16A 200000mW 3-Pin(3+Tab) TO-247 Tube | Onsemi | ACTIVE | 3~7 Days | 9,206 | |
MJW18020G | Bipolar Transistors - BJT 30A 450V 250W NPN | Onsemi | 3~7 Days | 7,763 | ||
MJH11022G | MJH11022G is a NPN Darlington transistor with a maximum voltage rating of 250V and a current rating of 10A at 5V | Onsemi | 3~7 Days | 7,481 | ||
IPW60R060P7XKSA1 | 600 volt rating | Infineon Technologies | Active | 3~7 Days | 4,100 | |
IRF150P220AKMA1 | TO-247-3 Single N-Channel MOSFET with 150 V and 203 A | Infineon Technologies | Active | 3~7 Days | 3,630 | |
IRFP4710PBF | The IRFP4710PBF is a high-performance N-channel MOSFET capable of handling up to 100V with a maximum continuous drain current of 72A | Infineon Technologies | 3~7 Days | 5,011 | ||
IKW40N120H3FKSA1 | 483W 80A 1.2kV FS TO-247-3-1 IGBTs | Infineon Technologies | 3~7 Days | 3,660 | ||
SPW47N60C3FKSA1 | MOSFET for high power applications | Infineon Technologies | 3~7 Days | 5,655 | ||
IRFP90N20DPBF | Tube packaging for 3-pin (3+Tab) configuration of the MOSFET | Infineon Technologies | 3~7 Days | 6,186 | ||
SCT3030ALGC11 | Silicon carbide N-Channel MOSFET featuring 650V voltage rating, 70A current handling and TrenchMOS technology for optimized performance | Rohm Semiconductor | 3~7 Days | 7,647 | ||
IRFP450PBF | Planar MOSFET capable of handling 100V or higher | Siliconix | ACTIVE | 3~7 Days | 5,829 | |
IXTH88N30P | The IXTH88N30P MOSFET is optimized for N-channel operation | Ixys Integrated Circuits Division | 3~7 Days | 7,832 | ||
IHW20N120R2 | IHW20N120R2 - 1200V IGBT Transistor with Reverse Conducting Feature | Infineon Technologies | 3~7 Days | 3,676 | ||
BU508DW | Bipolar transistors for BJT | Freescale Semiconductor | 3~7 Days | 6,245 | ||
40TPS08 | Silicon Controlled Rectifier rated at 55A, 800V, TO-247AC | Siliconix | Discontinued | 3~7 Days | 7,166 |
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