IRFP32N50KPBF
Field-effect transistor with N-channel design suitable for high voltage applicationsIRFP32N50KPBF
Field-effect transistor with N-channel design suitable for high voltage applications
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IRFP32N50KPBF 數據表
價格 (USD)
數量 | 單價 | 總價 |
---|---|---|
1 | $5.218 | $5.22 |
10 | $4.567 | $45.67 |
30 | $3.771 | $113.13 |
100 | $3.381 | $338.10 |
500 | $3.200 | $1,600.00 |
1000 | $3.119 | $3,119.00 |
這些價格會受到市場波動的影響,需要提交報價才能取得最新價格。
詳細說明
The IRFP32N50KPBF Power Field-Effect Transistor is a cutting-edge component that stands out for its superior performance and innovative design. With a current rating of 32A and a voltage rating of 500V, this transistor excels in high-power applications where efficiency and reliability are paramount. Its ultra-low on-resistance of 0.16ohm guarantees minimal power dissipation and maximum power handling capacity. The N-Channel architecture, in combination with Silicon and Metal-oxide Semiconductor FET technology, ensures optimal conductivity and thermal efficiency for enhanced operational stability. The TO-247AC package simplifies installation and maintenance procedures, while the ROHS compliant and Plastic Package-3 construction underscore its compliance with industry regulations and standards
主要特徵
- Fully protected against overcurrent and voltage
- Auto-recovery from fault conditions possible
- Self-protection ensures safe operation
應用
- Power Management
- Motor Drive & Control
規格
以下是所選零件的基本參數,涉及零件的特性及其所屬類別。
Product Category ! | MOSFET | RoHS | Details |
REACH | Details | Technology | Si |
Mounting Style | Through Hole | Package / Case | TO-247-3 |
Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 500 V | Id - Continuous Drain Current | 32 A |
Rds On - Drain-Source Resistance | 160 mOhms | Vgs - Gate-Source Voltage | - 30 V, + 30 V |
Vgs th - Gate-Source Threshold Voltage | 3 V | Qg - Gate Charge | 190 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature ! | + 150 C |
Pd - Power Dissipation | 460 W | Channel Mode | Enhancement |
Series | IRFP | Brand | Vishay Semiconductors |
Configuration | Single | Fall Time | 54 ns |
Forward Transconductance - Min | 14 S | Height | 20.82 mm |
Length | 15.87 mm | Product Type ! | MOSFET |
Rise Time ! | 120 ns | Factory Pack Quantity | 500 |
Subcategory | MOSFETs | Transistor Type | 1 N-Channel |
Typical Turn-Off Delay Time | 48 ns | Typical Turn-On Delay Time | 28 ns |
Width | 5.31 mm | Unit Weight | 0.211644 oz |
數據表 PDF
數據表記錄了器件的特性、絕對最大額定值、應用等,這對於作為器件特定應用的整體指南大有裨益。
常見問題解答
What is IRFP32N50KPBF?
The IRFP32N50KPBF is a power MOSFET transistor designed by Infineon Technologies. It is part of the HEXFET series and is commonly used in high-power applications such as power supplies, motor controls, and inverters.
How Does IRFP32N50KPBF Work?
The IRFP32N50KPBF works as a power transistor that controls the flow of current between the source and drain terminals based on the gate voltage. It operates in enhancement mode, allowing it to switch high currents with low voltage control signals. The MOSFET provides low on-state resistance and high switching speed, making it efficient for power conversion applications.
How Many Pins does IRFP32N50KPBF have and What are the Functions of the Pinout Configuration?
The IRFP32N50KPBF is housed in a TO-247 package, which typically has three pins:
- GATE: Controls the conduction of the MOSFET by applying the gate-source voltage.
- DRAIN: Connects to the load and carries the output current.
- SOURCE: Connected to the ground or return path for the current.
What are the Pros and Cons of IRFP32N50KPBF?
Pros:
- High Power Handling: Capable of handling high currents and voltages in power applications.
- Low On-Resistance: Provides efficient conduction with minimal voltage drop.
- Fast Switching Speed: Enables rapid switching transitions for improved efficiency.
- Robustness: Designed to withstand high-power levels and rugged environments.
Cons:
- Gate Control: Requires proper gate driving to prevent thermal runaway and ensure reliable operation.
- Heat Dissipation: Due to high power handling, effective heat sinking may be necessary.
- Threshold Voltage: Sensitivity to gate voltage may require careful design considerations.
Are There Any Equivalents/Alternatives to IRFP32N50KPBF for Recommendation?
Some equivalents or alternatives to the IRFP32N50KPBF include the IRF3205 from Infineon, the STP55NF06L from STMicroelectronics, and the FDP8870 from Fairchild Semiconductor.
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