SIR662DP-T1-GE3

Name: SIR662DP-T1-GE3
Rating: 4.5 (10 reviews)

High-power N-channel transistor with 60V voltage rating and 100A current capacity

7,300 有效庫存

SIR662DP-T1-GE3

有效庫存7,300

High-power N-channel transistor with 60V voltage rating and 100A current capacity

製造商零件號 # : SIR662DP-T1-GE3
包裝/封裝: PowerPAK-SO-8
製造商: Vishay
產品分類 : Single FETs, MOSFETs

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SIR662DP-T1-GE3 數據表

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詳細說明

Designed to withstand a wide temperature range from -55°C to 175°C, the SIR662DP-T1-GE3 is able to operate reliably in various environments and conditions. Whether you're working with industrial equipment or consumer electronics, this MOSFET is a versatile and dependable component that can meet your power management needs with precision and excellence

主要特徵

Faster switching speed
Improved thermal management
Rugged and reliable operation

應用

Efficient power management
Industrial automation solutions
Renewable energy applications

規格

以下是所選零件的基本參數，涉及零件的特性及其所屬類別。

Pbfree Code	Yes	Part Life Cycle Code	Not Recommended
Part Package Code	SOT	Pin Count !	8
Reach Compliance Code		ECCN Code	EAR99
Avalanche Energy Rating (Eas)	80 mJ	Case Connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	60 V
Drain Current-Max (Abs) (ID)	60 A	Drain Current-Max (ID)	60 A
Drain-source On Resistance-Max	0.0048 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 Code	R-XDSO-C5	Moisture Sensitivity Level	1
Number of Elements	1	Number of Terminals	5
Operating Mode !	ENHANCEMENT MODE	Operating Temperature-Max	150 °C
Package Body Material	UNSPECIFIED	Package Shape	RECTANGULAR
Package Style	SMALL OUTLINE	Peak Reflow Temperature (Cel)	260
Polarity/Channel Type	N-CHANNEL	Power Dissipation-Max (Abs)	104 W
Pulsed Drain Current-Max (IDM)	100 A	Qualification Status !	Not Qualified
Surface Mount !	YES	Terminal Form !	C BEND
Terminal Position	DUAL	Time@Peak Reflow Temperature-Max (s)	30
Transistor Application	SWITCHING	Transistor Element Material	SILICON

數據表 PDF

數據表記錄了器件的特性、絕對最大額定值、應用等，這對於作為器件特定應用的整體指南大有裨益。

初步規格 SIR662DP-T1-GE3 PDF 下載

常見問題解答

What is SIR662DP-T1-GE3?

The SIR662DP-T1-GE3 is a 60V dual N-channel TrenchFET power MOSFET designed by Vishay Siliconix. It is ideal for high-power switching applications such as power supplies, motor control, and automotive systems.

How Does SIR662DP-T1-GE3 Work?

The SIR662DP-T1-GE3 operates as a power MOSFET, capable of efficiently switching high currents at high voltages. It utilizes N-channel TrenchFET technology to provide low on-state resistance and high-speed switching, allowing for effective power management in various applications.

How Many Pins does SIR662DP-T1-GE3 have and What are the Functions of the Pinout Configuration?

The SIR662DP-T1-GE3 is housed in a PowerPAK SO-8 package. The pinout configuration includes:

GATE1, GATE2: Gate control pins for the two N-channel MOSFETs.
SOURCE1, SOURCE2: Source pins for the two N-channel MOSFETs.
DRAIN1, DRAIN2: Drain pins for the two N-channel MOSFETs.
COM: Common pin connecting the sources of both MOSFETs.
NC: No-connect pin.

What are the Pros and Cons of SIR662DP-T1-GE3?

Pros:

High Voltage Rating: Operates at 60V, suitable for high-power applications.
Low On-State Resistance: Provides efficient power switching with minimal power loss.
Dual MOSFET Configuration: Enables bidirectional current flow and can be used in various circuit topologies.
Compact Package: PowerPAK SO-8 package offers space savings and improved thermal performance.
High-Speed Switching: Allows for rapid switching transitions, suitable for high-frequency applications.

Cons:

Gate Drive Requirements: Requires adequate gate drive voltage and current for optimal performance.
Heat Dissipation: May generate heat during high-power operation, necessitating proper thermal management.
Complexity: Dual MOSFET configuration may require careful consideration in circuit design and layout.

Are There Any Equivalents/Alternatives to SIR662DP-T1-GE3 for Recommendation?

The SI7469DP-T1-GE3 from Vishay Siliconix is a similar dual N-channel MOSFET with comparable specifications.
Alternatives to the SIR662DP-T1-GE3 include the AON6210 from Alpha & Omega Semiconductor and the FDMS86181 from Fairchild Semiconductor.