TO247-3 相關產品
零件號 | 描述 | 製造商 | 生命週期狀態 | 貨物週期 | 有存貨 | 操作 |
---|---|---|---|---|---|---|
IXGH15N120B2D1 | 1200V 30A Trans IGBT Chip 3-Pin TO-247AD | Ixys Integrated Circuits Division | 3~7 Days | 3,877 | ||
IXBH32N300 | Trans IGBT Chip N-Channel 3000V 80A 400W TO-247AD 3-Pin | Ixys Integrated Circuits Division | ACTIVE | 3~7 Days | 9,030 | |
IXBH16N170A | 16A 1.7kV TO-247AD IGBTs ROHS 150W | Ixys Integrated Circuits Division | ACTIVE | 3~7 Days | 5,416 | |
NGTB25N120FLWG | IGBT Transistors IGBT, 1200 V, 25 A, FS1 Solar/UPS | Onsemi | OBSOLETE | 3~7 Days | 6,940 | |
FGH75N60UFTU | Trans IGBT Chip N-CH 600V 150A 452W 3-Pin(3+Tab) TO-247 Tube | Onsemi | Obsolete | 3~7 Days | 5,569 | |
FGH40N65UFDTU | IGBT Transistors N-ch / 40A 650V | Onsemi | OBSOLETE | 3~7 Days | 6,553 | |
NGTB50N65S1WG | IGBT, FSII, 650V, 50A | Onsemi | 3~7 Days | 7,008 | ||
FGH20N60SFDTU-F085 | IGBT, 600V, 20A, 1.9V, TO-247Field Stop | Onsemi | 3~7 Days | 6,600 | ||
IXCH36N250 | 2500V N-Channel IGBT Chip, 73A, 595W, TO-247 Package | Ixys Integrated Circuits Division | ACTIVE | 3~7 Days | 9,211 | |
IXTX90P20P | MOSFET PLUS247 Through Hole P-Channel 200 V 90 A 44 mOhm Power | Ixys Integrated Circuits Division | ACTIVE | 3~7 Days | 6,742 | |
IXBH20N300 | IGBT Transistors IGBT BIMSFT-VERYHIVOLT | Ixys Integrated Circuits Division | 3~7 Days | 3,732 | ||
APT33GF120BRG | APT33GF120BRG 1200V Non-Punch-Thru IGBT | Microchip Technology | Active | 3~7 Days | 8,946 | |
IXBX25N250 | Transistor IGBT Chip for N-Channel with 2500V, 55A, 300W in 3-Pin(3+Tab) PLUS 247 | Ixys Integrated Circuits Division | ACTIVE | 3~7 Days | 8,984 | |
IXFX44N80Q3 | High-performance power MOSFET rated at 800V/44A for Q3 applications | Ixys Integrated Circuits Division | 3~7 Days | 3,564 | ||
IXFR40N90P | Specifications: The IXFR40N90P is a high-voltage N-channel MOSFET designed to handle up to 900 volts and a maximum current of 21 amps | Ixys Integrated Circuits Division | 3~7 Days | 2,916 | ||
IXFH15N80 | 5a 800v 0.6ohm n-channel silicon power field-effect transistor with metal-oxide semiconductor fet technology in TO-247AD package | Ixys Integrated Circuits Division | ACTIVE | 3~7 Days | 5,663 | |
IXFH50N60X | MOSFET DiscMSFT NCh UltrJnctn XClass TO-247AD | Ixys Integrated Circuits Division | 3~7 Days | 3,481 | ||
IXFH14N85X | TO-247 package MOSFET with 460W power dissipation | Ixys Integrated Circuits Division | 3~7 Days | 2,726 | ||
FGH60N60SMD-F085 | IGBT Transistors 600V/60A Field Stop IGBT Gen 2 | Onsemi | 3~7 Days | 2,869 | ||
VS-40TPS08A-M3 | SCR 800V 55A(RMS) 600A 3-Pin(3+Tab) TO-247AC Tube | Siliconix | 3~7 Days | 6,677 | ||
SIHG105N60EF-GE3 | EF Series Power MOSFET With Fast Body Diode | Siliconix | 3~7 Days | 5,756 | ||
SIHG47N60AEF-GE3 | Efficient Power MOSFET with Rapid Body Diode | Siliconix | 3~7 Days | 2,856 | ||
SIHG47N60EF-GE3 | MOSFET RECOMMENDED ALT 78-SIHW47N60EF-GE3 | Siliconix | 3~7 Days | 2,826 | ||
SIHG32N50D-GE3 | Unipolar N-MOSFET transistor capable of handling up to 500V and 19A | Siliconix | 3~7 Days | 4,480 | ||
IRFP460BPBF | Power Field-Effect Transistor, 20A I(D), 500V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | Siliconix | ACTIVE | 3~7 Days | 9,975 | |
SIHG73N60E-GE3 | 600V power transistor with 73A current rating | Siliconix | ACTIVE | 3~7 Days | 7,123 | |
SIHG47N60E-E3 | MOSFET 600V Vds 30V Vgs TO-247AC | Siliconix | NRND | 3~7 Days | 5,242 | |
SIHG22N60E-GE3 | MOSFET SIHG22N60E-GE3: Operating at 600V Vds and 30V Vgs, housed in a TO-247AC package | Siliconix | ACTIVE | 3~7 Days | 5,250 | |
IRFPS40N50LPBF | 3-Pin Transistor with 0.1ohm Resistance | Siliconix | OBSOLETE | 3~7 Days | 9,012 | |
IRFPG30PBF | MOSFET 1000V N-CH HEXFET | Siliconix | 3~7 Days | 7,505 | ||
IRFPF50PBF | Trans MOSFET N-CH 900V 6.7A 3-Pin(3+Tab) TO-247AC | Siliconix | ACTIVE | 3~7 Days | 6,071 | |
IRFP460APBF | A HEXFET N-Channel MOSFET, the IRFP460APBF operates at 500V | Infineon Technologies | ACTIVE | 3~7 Days | 9,530 | |
IRFP360LCPBF | The IRFP360LCPBF is a N-type Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) housed in a TO-247AC package | Siliconix | Active | 3~7 Days | 5,888 | |
IRFP254PBF | Trans MOSFET N-CH 250V 23A 3-Pin(3+Tab) TO-247AC | Siliconix | Active | 3~7 Days | 7,563 | |
IRFP22N60KPBF | Trans MOSFET N-CH 600V 22A 3-Pin(3+Tab) TO-247AC | Siliconix | ACTIVE | 3~7 Days | 9,046 | |
IRFP150PBF | Trans MOSFET N-CH 100V 41A 3-Pin(3+Tab) TO-247AC | Siliconix | ACTIVE | 3~7 Days | 8,305 | |
MJW21196G | ON Semi MJW21196G NPN Bipolar Transistor | Onsemi | ACTIVE | 3~7 Days | 6,065 | |
MJW21193G | Bipolar Transistors - BJT | Onsemi | ACTIVE | 3~7 Days | 7,322 | |
MJW1302AG | Trans GP BJT PNP 230V 15A 200000mW 3-Pin(3+Tab) TO-247 Tube | Onsemi | ACTIVE | 3~7 Days | 9,374 | |
FGH80N60FD2TU | Trans IGBT Chip N-CH 600V 80A 290W 3-Pin(3+Tab) TO-247 Tube | Onsemi | ACTIVE | 3~7 Days | 5,696 |
附加包裝/箱