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IXFH6N100
TO-247AD ROHS MOSFETs
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製造商零件號 # : IXFH6N100
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包裝/封裝: TO247-3
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零件狀態 : Active
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產品分類 : Single FETs, MOSFETs
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IXFH6N100 數據表
價格 (USD)
| 數量 | 單價 | 總價 |
|---|---|---|
| 1 | $34.853 | $34.85 |
| 210 | $13.908 | $2,920.68 |
| 510 | $13.442 | $6,855.42 |
| 990 | $13.213 | $13,080.87 |
這些價格會受到市場波動的影響，需要提交報價才能取得最新價格。
詳細說明
Versatility is key with the N-Channel HiPerFET™ Standard series, as these Power MOSFETs are available in a range of standard industrial packages, including isolated types. This ensures compatibility with a wide array of systems and setups, making them a popular choice among engineers and designers looking for reliable and efficient components for their projects. Whether you're working on a large-scale industrial application or a smaller, more specialized project, these MOSFETs have the power and performance to meet your needs
主要特徵
- Compact Surface Mount Package
- Low Forward Voltage Drop
- Avalanche Tested
應用
- Versatile applications
- Advanced technology
- Cost-effective solution
規格
以下是所選零件的基本參數，涉及零件的特性及其所屬類別。
| Drain-Source Voltage (V) | 1000 | Maximum On-Resistance @ 25 ℃ (Ohm) | 2 |
| Continuous Drain Current @ 25 ℃ (A) | 6 | Gate Charge (nC) | 88 |
| Input Capacitance, CISS (pF) | 2600 | Thermal resistance [junction-case] (K/W) | 0.7 |
| Configuration | Single | Package Type | TO-247 |
| Power Dissipation (W) | 179 | Maximum Reverse Recovery (ns) | 250 |
| Sample Request | Yes |
數據表 PDF
數據表記錄了器件的特性、絕對最大額定值、應用等，這對於作為器件特定應用的整體指南大有裨益。
常見問題解答
What is IXFH6N100?
The IXFH6N100 is a high power, high voltage IGBT (Insulated Gate Bipolar Transistor) designed by IXYS Corporation. It is suitable for use in high power switching applications such as motor control, renewable energy systems, and industrial power supplies.
How Does IXFH6N100 Work?
The IXFH6N100 operates as a high power switching device, utilizing the combination of a MOSFET and a bipolar transistor for efficient power handling. It can control high currents and voltages with low conduction and switching losses, making it suitable for high power applications.
How Many Pins does IXFH6N100 have and What are the Functions of the Pinout Configuration?
The IXFH6N100 is typically available in a TO-247 package. The pinout configuration includes:
- Collector (C): This pin is the collector of the IGBT and is connected to the high power terminal.
- GATE (G): The gate pin is used to control the switching action of the IGBT.
- Emitter (E): This pin is the emitter of the IGBT and is connected to the low power terminal.
What are the Pros and Cons of IXFH6N100?
Pros:
- High Power Handling: Designed to handle high currents and voltages, suitable for high power applications.
- Low Conduction and Switching Losses: Results in high efficiency and reduced heat generation.
- Reliable: Provides robust performance in demanding industrial environments.
- High Voltage Capability: Capable of withstanding high voltages, enhancing its applicability in power systems.
Cons:
- Complex Drive Circuitry: IGBTs may require more complex drive circuitry compared to other power devices.
- Cost: High power IGBTs may have a higher cost compared to lower voltage or current alternatives.
- Switching Speed: IGBTs have a finite turn-off time, which may limit their use in high-frequency switching applications.
Are There Any Equivalents/Alternatives to IXFH6N100 for Recommendation?
Alternatives to the IXFH6N100 include the FGH60N60SMD from Fairchild Semiconductor and the SKM600GA123D from Semikron.
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