IXFH150N17T
Power Field-Effect Transistor, 150A I(D), 175V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PINIXFH150N17T
Power Field-Effect Transistor, 150A I(D), 175V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN
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About After Sales Service
All Parts Extended Quality Guarantee
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IXFH150N17T 數據表
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目前的價格方案正在編制中。請聯絡我們的客戶服務團隊獲取最新的價格資訊。感謝您的理解和支援!
詳細說明
Features● International standard packages● Unclamped Inductive Switching (UIS) rated● Low package inductance - easy to drive and to protectAdvantages● Easy to mount● Space savings● High power density
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主要特徵
- International standard packages
- Unclamped Inductive Switching (UIS) rated
- Low package inductance
- - easy to drive and to protect
- Advantages
- Easy to mount
- Space savings
- High power density
規格
以下是所選零件的基本參數,涉及零件的特性及其所屬類別。
Product Category ! | MOSFET | RoHS | Details |
Technology | Si | Mounting Style | Through Hole |
Package / Case | TO-247-3 | Transistor Polarity | N-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 175 V |
Id - Continuous Drain Current | 150 A | Rds On - Drain-Source Resistance | 10 mOhms |
Vgs - Gate-Source Voltage | - 30 V, + 30 V | Qg - Gate Charge | 47 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature ! | + 175 C |
Pd - Power Dissipation | 830 mW | Brand | IXYS |
Configuration | Single | Fall Time | 30 ns |
Forward Transconductance - Min | 118 S | Product Type ! | MOSFET |
Rise Time ! | 30 ns | Factory Pack Quantity | 30 |
Subcategory | MOSFETs | Transistor Type | 1 N-Channel |
Unit Weight | 0.211644 oz |
數據表 PDF
數據表記錄了器件的特性、絕對最大額定值、應用等,這對於作為器件特定應用的整體指南大有裨益。
常見問題解答
What is IXFH150N17T?
The IXFH150N17T is a high-voltage, high-speed IGBT (Insulated Gate Bipolar Transistor) designed by IXYS Corporation. It is suitable for applications requiring high power switching, such as motor drives, power supplies, and renewable energy systems.
How Does IXFH150N17T Work?
The IXFH150N17T operates by controlling high current and voltage levels through the use of a gate signal. It combines the high-speed operation of a MOSFET with the high-power capability of a bipolar transistor, making it suitable for efficient power control and conversion.
How Many Pins does IXFH150N17T have and What are the Functions of the Pinout Configuration?
The IXFH150N17T is housed in a TO-247 package which typically includes three pins:
- Collector: This is the output pin for the high power switching.
- Emitter: This is the ground pin for the device.
- Gate: The gate pin controls the switching of the transistor.
What are the Pros and Cons of IXFH150N17T?
Pros:
- High Voltage Capability: Capable of handling high voltage levels, suitable for high-power applications.
- High-Speed Operation: Provides fast switching times, allowing for efficient power control.
- Robustness: Offers robust performance in demanding environments.
- Reliability: Known for its reliability in high-power switching applications.
Cons:
- Complex Drive Circuitry: May require complex drive circuitry to operate efficiently and safely.
- Heat Dissipation: High-power applications may require effective heat dissipation mechanisms.
Are There Any Equivalents/Alternatives to IXFH150N17T for Recommendation?
Some equivalents and alternatives to the IXFH150N17T include the FGA60N65SMD from Fairchild Semiconductor and the IRG4PH50UD from Infineon Technologies.
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