IKW40N120H3FKSA1

483W 80A 1.2kV FS TO-247-3-1 IGBTs
3,660 有效庫存

IKW40N120H3FKSA1

有效庫存3,660

483W 80A 1.2kV FS TO-247-3-1 IGBTs

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IKW40N120H3FKSA1 數據表
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詳細說明

Discover the power of the IKW40N120H3FKSA1 IGBT module from Infineon Technologies, designed for high-efficiency and reliable performance in industrial motor drives, power supplies, and renewable energy inverters. With a current carrying capacity of 40A and a voltage rating of 1200V, this module is engineered to excel in high-power applications. Its advanced IGBT technology minimizes conduction and switching losses, delivering increased system efficiency and performance. The module's low profile and compact design, along with its temperature monitoring system, ensure seamless integration and protection from overheating. Moreover, its high short-circuit ruggedness and wide operating temperature range guarantee reliable operation in challenging environments, making it the ultimate choice for demanding industrial applications

主要特徵

  • Increased energy storage
  • Simplified power conversion
  • Better power factor correction
  • Improved DC link stability

應用

  • Smart grid technology
  • Low voltage applications
  • High frequency operation

規格

以下是所選零件的基本參數，涉及零件的特性及其所屬類別。

functionalPacking TUBE addProductInfo RoHS compliant, non dry
msl NA halogenFree undefined
customerInfo STANDARD fgr N58
productClassification ASP productStatusInfo active
hfgr K packageName PG-TO247-3
pbFree yes moistureProtPack NON DRY
fourBlockPackageName PG-TO247-3-41 rohsCompliant yes
opn IKW40N120H3FKSA1 completelyPbFree yes
sapMatnrSali SP000674416

數據表 PDF

數據表記錄了器件的特性、絕對最大額定值、應用等，這對於作為器件特定應用的整體指南大有裨益。

初步規格 IKW40N120H3FKSA1 PDF 下載

常見問題解答

What is IKW40N120H3FKSA1?

The IKW40N120H3FKSA1 is a high power, high voltage IGBT (Insulated Gate Bipolar Transistor) designed by Infineon Technologies. It is suitable for applications requiring robust power handling capabilities such as motor control, renewable energy systems, and industrial automation.

How Does IKW40N120H3FKSA1 Work?

The IKW40N120H3FKSA1 operates as a high power switch, utilizing the IGBT technology to control large currents and voltages with high efficiency. It combines the advantages of high input impedance of MOSFETs with the high current capability of bipolar transistors, making it suitable for power conversion and control applications.

How Many Pins does IKW40N120H3FKSA1 have and What are the Functions of the Pinout Configuration?

The IKW40N120H3FKSA1 is housed in a TO-247 package. The pinout configuration includes:

  • Emitter: Emitter pin connected to the internal diode.
  • Collector: Collector pin for the main current conduction.
  • Gate: Gate pin for controlling the IGBT turn-on and turn-off.
  • Collector-emitter diode: Additional pins for the internal diode connection.

What are the Pros and Cons of IKW40N120H3FKSA1?

Pros:

  • High Power Handling: Capable of handling high currents and voltages.
  • High Voltage Capability: Suitable for high voltage applications.
  • High Efficiency: Offers efficient power conversion and control.
  • Robustness: Designed for rugged and reliable operation in harsh environments.
  • TO-247 Package: Industry-standard package for easy integration into various designs.

Cons:

  • Gate Drive Requirements: May require specialized gate drive circuitry for optimal performance.
  • Switching Noise: IGBTs can produce switching noise that needs to be managed in certain applications.
  • Heat Dissipation: High power capabilities may require careful thermal management.

Are There Any Equivalents/Alternatives to IKW40N120H3FKSA1 for Recommendation?

Other similar IGBTs to the IKW40N120H3FKSA1 include the FGA60N65SMD from Fairchild Semiconductor and the NGTB40N120FL3WG from ON Semiconductor.

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