BU508DW

Bipolar transistors for BJT
6,245 有效庫存

BU508DW

有效庫存6,245

Bipolar transistors for BJT

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BU508DW 數據表
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詳細說明

The BU508DW is a high voltage NPN power transistor designed for use in high power applications. It features a Collector-Emitter voltage (VCEO) of 700V, a Collector current (IC) of 8A, and a power dissipation (Ptot) of 125W. This transistor is encased in a TO-247 package and is designed for use in high voltage switching and linear applications.The BU508DW is designed to operate in a wide temperature range of -65°C to 150°C, making it suitable for a variety of environmental conditions. It also features a low saturation voltage and high current gain, making it an efficient choice for high power applications.The transistor has a high fT value, enabling fast switching speeds and high frequency performance. It also has a low ON resistance, reducing power losses and improving efficiency in applications where high power throughput is required.

主要特徵

  • High voltage capability
  • High speed
  • Low spread of dynamic parameters
  • Very high switching speed
  • Low switching losses
  • Low on-state voltage drop
  • Insulated package (TO-3P)
  • 1, 200 V NPN silicon power transistor
  • Designed for general purpose power amplifier and switching applications

應用

  • Switch mode power supplies
  • Converters
  • UPS (Uninterruptible Power Supply)
  • Lighting applications
  • Household appliances
  • Industrial equipment
  • Motor controls
  • Audio amplifiers
  • TV and monitors
  • Automotive electronics

規格

以下是所選零件的基本參數，涉及零件的特性及其所屬類別。

Product Category ! Bipolar Transistors - BJT Package / Case TO-247-3
Transistor Polarity NPN Configuration Single
Collector- Emitter Voltage VCEO Max 700 V Maximum DC Collector Current 8 A
Pd - Power Dissipation 125 W Gain Bandwidth Product fT 7 MHz
Maximum Operating Temperature ! + 150 C Brand NXP Semiconductors
DC Collector/Base Gain hfe Min 6 at 100 mA, 5 V Height 21.4 mm
Length 16.2 mm Product Type ! BJTs - Bipolar Transistors
Subcategory Transistors Technology Si
Width 5.2 mm Unit Weight 0.229281 oz

數據表 PDF

數據表記錄了器件的特性、絕對最大額定值、應用等，這對於作為器件特定應用的整體指南大有裨益。

初步規格 BU508DW PDF 下載

常見問題解答

What is BU508DW?

The BU508DW is a high-voltage, fast-switching NPN power transistor designed for use in high-power audio amplifiers, switch-mode power supplies, and industrial applications. It is known for its high breakdown voltage and efficient switching capabilities.

How Does BU508DW Work?

The BU508DW operates as a power transistor that controls high currents and voltages. It can switch rapidly between on and off states, making it suitable for applications requiring power amplification or switching. The transistor handles large power dissipation and can withstand high voltages and temperatures.

How Many Pins does BU508DW have and What are the Functions of the Pinout Configuration?

The BU508DW is typically housed in a TO-247 package, which includes three pins:

  • Collector (C): Connects to the load or power supply.
  • Base (B): Controls the switching action of the transistor.
  • Emitter (E): Allows current to flow out of the transistor.

What are the Pros and Cons of BU508DW?

Pros:

  • High Voltage Capability: Suitable for high-power applications requiring high breakdown voltage.
  • Fast Switching Speed: Enables rapid on/off transitions for efficient power control.
  • High Power Dissipation: Can handle high power levels without overheating.
  • Reliable Performance: Known for its robustness and longevity in demanding environments.

Cons:

  • Size: TO-247 packages are relatively larger compared to other transistor packages.
  • Complex Drive Circuitry: May require additional components for proper drive and protection circuitry.
  • Heatsink Required: Due to high power dissipation, a heatsink may be needed for thermal management.

Are There Any Equivalents/Alternatives to BU508DW for Recommendation?

  • Alternatives to the BU508DW include the MJL4281A from ON Semiconductor and the 2SC5200 from Toshiba.
  • Equivalents to the BU508DW can be found in the TIP3055 from STMicroelectronics and the MJL21193 from ON Semiconductor.

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