IHW20N120R2
IHW20N120R2 - 1200V IGBT Transistor with Reverse Conducting FeatureIHW20N120R2
IHW20N120R2 - 1200V IGBT Transistor with Reverse Conducting Feature
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製造商零件號 # : IHW20N120R2
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包裝/封裝: TO247-3
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產品分類 : Single IGBTs
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IHW20N120R2 數據表
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詳細說明
Reverse Conducting IGBT with monolithic body diodeFeatures:• Powerful monolithic Body Diode with very low forward voltage• Body diode clamps negative voltages• Trench and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior• NPT technology offers easy parallel switching capability due to positive temperature coefficient in VCE(sat)• Low EMI• Qualified according to JEDEC1 for target applications• Pb-free lead plating; RoHS compliant• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/Applications:• Inductive Cooking• Soft Switching Applications
主要特徵
- Powerful monolithic Body Diode with very low forward voltage
- Body diode clamps negative voltages
- Trench and Fieldstop technology for 1200 V applications offers :
- - very tight parameter distribution
- - high ruggedness, temperature stable behavior
- NPT technology offers easy parallel switching capability due to
- positive temperature coefficient in VCE(sat)
- Low EMI
- Qualified according to JEDEC1 for target applications
- Pb-free lead plating; RoHS compliant
- Complete product spectrum and PSpice Models :
規格
以下是所選零件的基本參數,涉及零件的特性及其所屬類別。
Product Category ! | IGBT Transistors | RoHS | Details |
Technology | Si | Package / Case | TO-247-3 |
Mounting Style | Through Hole | Configuration | Single |
Collector- Emitter Voltage VCEO Max | 1.2 kV | Collector-Emitter Saturation Voltage | 1.85 V |
Maximum Gate Emitter Voltage | - 20 V, + 20 V | Continuous Collector Current at 25 C | 20 A |
Pd - Power Dissipation | 330 W | Minimum Operating Temperature | - 40 C |
Maximum Operating Temperature ! | + 150 C | Brand | Infineon Technologies |
Continuous Collector Current Ic Max | 20 A | Height | 20.95 mm |
Length | 15.9 mm | Product Type ! | IGBT Transistors |
Factory Pack Quantity | 240 | Subcategory | IGBTs |
Width | 5.3 mm | Part # Aliases | SP000212015 IHW20N120R2XK |
Unit Weight | 1.340411 oz |
數據表 PDF
數據表記錄了器件的特性、絕對最大額定值、應用等,這對於作為器件特定應用的整體指南大有裨益。
常見問題解答
What is IHW20N120R2?
The IHW20N120R2 is a 1200V, 20A IGBT (Insulated Gate Bipolar Transistor) designed by Infineon Technologies. It is suitable for various high power switching applications such as motor drives, solar inverters, and industrial power supplies.
How Does IHW20N120R2 Work?
The IHW20N120R2 operates as a high-power semiconductor switch, enabling efficient and controllable switching of high voltage and high current loads. It combines the high input impedance of a MOSFET with the high current capability of a bipolar transistor, making it suitable for demanding power electronic applications that require fast switching and high energy efficiency.
How Many Pins does IHW20N120R2 have and What are the Functions of the Pinout Configuration?
The IHW20N120R2 is typically available in a TO-247 package with the following pinout configuration:
- Collector: High-voltage terminal connected to the load.
- Emitter: Low-voltage terminal connected to ground or circuit common.
- Gate: Control terminal for applying the switching signal.
What are the Pros and Cons of IHW20N120R2?
Pros:
- High Voltage and Current Capability: Capable of withstanding high voltage and current, suitable for high power applications.
- Fast Switching Speed: Enables rapid on/off switching, contributing to efficient power conversion.
- Robustness: Offers robust performance under high stress and harsh environments.
- High Input Impedance: Exhibits low drive power requirements for control circuitry.
Cons:
- Complex Drive Circuitry: May require sophisticated drive circuitry to ensure proper turn-on and turn-off characteristics.
- Heat Dissipation: High power dissipation may require efficient heat sinking and thermal management.
Are There Any Equivalents/Alternatives to IHW20N120R2 for Recommendation?
Equivalents to the IHW20N120R2 include the FGA20N120ANTD from Fairchild Semiconductor and the NGTB20N120FL3WG from ON Semiconductor.
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