TO-247-4 相關產品
零件號 | 描述 | 製造商 | 生命週期狀態 | 貨物週期 | 有存貨 | 操作 |
---|---|---|---|---|---|---|
NVH4L045N065SC1 | Silicon Carbide MOSFET, N-Channel, 33 mohm, 650V | Onsemi | 3~7 Days | 7,250 | ||
NVH4L015N065SC1 | N-Channel Silicon Carbide MOSFET for Automotive Applications, 650V, 142A, TO-247 Package | Onsemi | 3~7 Days | 6,083 | ||
IPZ65R045C7 | Trans MOSFET N-CH 650V 46A 4-Pin(4+Tab) TO-247 Tube | Infineon | ACTIVE | 3~7 Days | 3,358 | |
G3R20MT12K | 1200V, 20mQ Sic Mosfet, TO-247-4 | GeneSiC Semiconductor | ACTIVE | 3~7 Days | 5,637 | |
NTH4L014N120M3P | EliteSiC Silicon Carbide MOSFET boasting 14mohm resistance, 1200V voltage capability, M3P setup, and TO-247-4L enclosure | Onsemi | Active | 3~7 Days | 6,424 | |
NVH4L022N120M3S | EliteSiC Silicon Carbide MOSFET featuring 22mohm resistance, 1200V, M3S technology, TO247-4L package | Onsemi | Active | 3~7 Days | 4,611 | |
MSC035SMA170B4 | Trans MOSFET N-CH SiC 1.7KV 68A 4-Pin(4+Tab) TO-247 | Microchip Technology | ACTIVE | 3~7 Days | 8,325 | |
FGH75T65SQDNL4 | Fast Recovery Field Stop IGBT | Onsemi | ACTIVE | 3~7 Days | 9,936 | |
FGH75T65SHDTL4 | FGH75T65SHDTL4 is a high-power semiconductor device suitable for various applications | Onsemi | ACTIVE | 3~7 Days | 6,738 | |
NTH4LN095N65S3H | MOSFET SUPERFET3 FAST 95MOHM TO-247-4 | Onsemi | NRND | 3~7 Days | 9,971 | |
NTH4LN067N65S3H | MOSFET SUPERFET3 FAST 67MOHM TO-247-4 | Onsemi | NRND | 3~7 Days | 9,828 | |
FGH40T120SQDNL4 | Tube/Rail GBT Transistor 1200V 160A 4-Pin TO-247 | Onsemi | ACTIVE | 3~7 Days | 8,825 | |
NTH4L020N120SC1 | Silicon Carbide (SiC) MOSFET - EliteSiC, 20 milliohms, 1200 volts, M1, TO-247-4L | Onsemi | ACTIVE | 3~7 Days | 5,772 | |
NVH4L080N120SC1 | MOSFET Silicon Carbide (SiC) MOSFET, N-Channel - EliteSiC, 80 mohm, 1200 V, M1, TO247-4L Silicon Carbide MOSFET, N?Channel, 1200 V, 80 m?, TO247?4L | Onsemi | Active | 3~7 Days | 5,357 | |
E3M0032120K | MOSFET SiC Gen 3 Automotive TO-247-4 1200V 32mohm | Wolfspeed, Inc | ACTIVE | 3~7 Days | 5,139 | |
UJ4SC075006K4S | TO-247-4 package JFET with 750V voltage rating and 6 milliohm RDS(on) | Qorvo | ACTIVE | 3~7 Days | 8,874 | |
G3R20MT17K | Effect Transistor for Power Applications G3R20MT17K, G3R20MT17K High-Power MOSFET, G3R20MT17K Power FET, Power Field-Effect Transistor G3R20MT17K | GeneSiC Semiconductor | ACTIVE | 3~7 Days | 6,356 | |
E3M0060065K | 650V MOSFET utilizing Silicon Carbide as its semiconductor material | Wolfspeed, Inc. | ACTIVE | 3~7 Days | 7,618 | |
UF3C120080K4S | SiC FET - 1200 Volts, 80 Milliohms | Qorvo | ACTIVE | 3~7 Days | 8,754 | |
C3M0120065K | 650V 22A Silicon Carbide N-Channel MOSFET TO-247 4-Pin | Wolfspeed, Inc. | ACTIVE | 3~7 Days | 5,717 | |
SCT3060ARC14 | High-Voltage Power Transistor | Rohm Semiconductor | ACTIVE | 3~7 Days | 8,734 | |
UF3C120150K4S | Current rating of 18.4A | Qorvo | ACTIVE | 3~7 Days | 8,024 | |
E3M0021120K | 1200V 21mohm MOSFET SiC Automotive Gen 3 TO-247-4 | Wolfspeed, Inc. | ACTIVE | 3~7 Days | 7,196 | |
E3M0040120K | SiC-based N-channel power transistor engineered for automotive systems, featuring a voltage tolerance of 1 | Wolfspeed, Inc. | ACTIVE | 3~7 Days | 5,755 | |
LSIC1MO120G0025 | N-Channel Silicon Carbide Metal-oxide Semiconductor FET | Littelfuse Inc. | ACTIVE | 3~7 Days | 7,989 | |
UJ4SC075011K4S | Power Field-Effect Transistor | Qorvo | ACTIVE | 3~7 Days | 9,244 | |
DMWS120H100SM4 | Tube containing 30 units of MOSFET SiC with BVDSS>1000V, TO247-4 package | Diodes Incorporated | Active | 3~7 Days | 7,585 | |
G3R30MT12K | G3R30MT12K - 1200V 30m TO-247-4 G3R SiC MOSFET | GeneSiC Semiconductor | ACTIVE | 3~7 Days | 6,929 | |
G3R75MT12K | G3R75MT12K is a MOSFET with a voltage rating of 1 | GeneSiC Semiconductor | ACTIVE | 3~7 Days | 7,776 | |
C2M0045170P | Transistor silicon carbide N-channel with 1.7KV voltage rating and 72A current capacity in TO-247 package | Wolfspeed, Inc. | ACTIVE | 3~7 Days | 9,288 | |
G3R12MT12K | Power-Focused Field-Effect Transistor | GeneSiC Semiconductor | ACTIVE | 3~7 Days | 6,933 | |
UF3C065030K4S | 650V-27mΩ SiC FET | Qorvo | Active | 3~7 Days | 8,236 | |
UJ4C075033K4S | Silicon Carbide Field-Effect Transistor with a voltage rating of 750V and an on-state resistance of 33 milliohms | Qorvo | ACTIVE | 3~7 Days | 6,270 | |
SCT3030ARC14 | High-Voltage N-Channel MOSFET Transistor, 70A Current, TO-247 | Rohm Semiconductor | ACTIVE | 3~7 Days | 8,186 | |
MSC035SMA070B4 | Silicon carbide MOSFET with 700 volts and 35 milliohms in TO-247-4 package | Microchip Technology | Active | 3~7 Days | 7,037 | |
MSC025SMA330B4 | TO-247-4 MOSFET with 3300 V voltage rating and 25 mOhm impedance | Microchip Technology | ACTIVE | 3~7 Days | 8,858 | |
MSC015SMA070B4 | MSC015SMA070B4: Silicon Carbide N-Channel Power MOSFET | Microchip Technology | Active | 3~7 Days | 7,474 | |
IMZA65R027M1H | SiC 650V 59A N-channel power MOSFET with 4 pins and a tab in a tube packaging | Infineon Technologies | ACTIVE | 3~7 Days | 9,249 | |
IKZ75N65EL5 | TO-247-4 IGBTs with ROHS compliance | infineon | Unconfirmed | 3~7 Days | 8,166 | |
IMZ120R060M1H | High-power field-effect transistor for demanding applications | infineon | ACTIVE | 3~7 Days | 5,397 |
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