IRLR2908TRLPBF

有效庫存7,707

N-channel Silicon

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IRLR2908TRLPBF 數據表

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詳細說明

The IRLR2908TRLPBF is a high-performance Power Field-Effect Transistor designed for demanding applications. With a continuous drain current of 30A and a voltage rating of 80V, this N-Channel MOSFET offers efficient power management in a compact TO-252AA package. The low on-resistance of 0.028ohm ensures minimal power loss and reliable operation

IRLR2908TRLPBF

主要特徵

  • Advanced Process TechnologyUltra Low On-ResistanceDynamic dv/dt Rating175°C Operating TemperatureFast SwitchingRepetitive Avalanche Allowed up to Tjmax

規格

以下是所選零件的基本參數,涉及零件的特性及其所屬類別。

Product Category ! MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case DPAK-3 (TO-252-3) Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 80 V
Id - Continuous Drain Current 39 A Rds On - Drain-Source Resistance 28 mOhms
Vgs - Gate-Source Voltage - 16 V, + 16 V Vgs th - Gate-Source Threshold Voltage 2.5 V
Qg - Gate Charge 33 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature ! + 175 C Pd - Power Dissipation 120 W
Brand Infineon Technologies Configuration Single
Fall Time 55 ns Forward Transconductance - Min 35 S
Height 2.3 mm Length 6.5 mm
Product Type ! MOSFET Rise Time ! 95 ns
Factory Pack Quantity 3000 Subcategory MOSFETs
Transistor Type 1 N-Channel Typical Turn-Off Delay Time 36 ns
Typical Turn-On Delay Time 12 ns Width 6.22 mm
Part # Aliases SP001567286 Unit Weight 0.011640 oz

數據表 PDF

數據表記錄了器件的特性、絕對最大額定值、應用等,這對於作為器件特定應用的整體指南大有裨益。

初步規格 IRLR2908TRLPBF PDF 下載

常見問題解答

What is IRLR2908TRLPBF?

The IRLR2908TRLPBF is a power MOSFET (metal-oxide-semiconductor field-effect transistor) designed by Infineon Technologies. It is a N-channel MOSFET with low on-state resistance, making it suitable for high efficiency power management in various applications such as power supplies, motor control, and electronic load management.

How Does IRLR2908TRLPBF Work?

The IRLR2908TRLPBF operates as a switch, controlling the flow of current between the drain and source terminals based on the voltage applied to the gate terminal. It uses a metal-oxide-semiconductor structure to achieve high switching speeds and low on-state resistance, minimizing power losses and improving efficiency in power management applications.

How Many Pins does IRLR2908TRLPBF have and What are the Functions of the Pinout Configuration?

The IRLR2908TRLPBF is housed in a DPAK (TO-252) package. The pinout configuration includes:

  • GATE: Gate control terminal for turning the MOSFET on and off.
  • DRAIN: Terminal for connecting to the positive voltage supply or load.
  • SOURCE: Terminal for connecting to the ground or negative side of the load.

What are the Pros and Cons of IRLR2908TRLPBF?

Pros:

  • Low On-State Resistance: Enables efficient power handling with minimal voltage drops.
  • High Switching Speed: Allows for fast switching transitions, suitable for high-frequency applications.
  • Compact Package: The DPAK package provides a good balance between thermal performance and board space.
  • RoHS Compliant: Meets the Restriction of Hazardous Substances directive for environmentally friendly design.

Cons:

  • Gate-Drive Consideration: Requires careful attention to gate-drive voltage and current for optimal switching performance.
  • Thermal Management: May require additional heat sinking or thermal considerations for high power applications.

Are There Any Equivalents/Alternatives to IRLR2908TRLPBF for Recommendation?

Alternative N-channel power MOSFETs to the IRLR2908TRLPBF include the IRF3708 from Infineon Technologies and the FQP30N06L from Fairchild Semiconductor.

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