IRGP20B60PDPBF

247AC Tube 3-Pin(3+Tab) Trans IGBT Chip N-CH 600V 40A 220W
3,720 有效庫存

IRGP20B60PDPBF

有效庫存3,720

247AC Tube 3-Pin(3+Tab) Trans IGBT Chip N-CH 600V 40A 220W

  • 製造商零件號 # : IRGP20B60PDPBF

  • 包裝/封裝: TO-247-3

  • 零件狀態 : Obsolete

  • 製造商: Infineon

  • 產品分類 : Single IGBTs

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IRGP20B60PDPBF 數據表
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詳細說明

The IRGP20B60PDPBF is a high-power insulated gate bipolar transistor (IGBT) developed by Infineon Technologies, designed to meet the demanding requirements of industrial and power management applications. Operating at a voltage of 600V and a current of 20A, this IGBT is ideal for high-power applications such as motor control, industrial drives, and power supplies. Notably, the IRGP20B60PDPBF features a low on-state voltage drop, which contributes to minimized power losses and increased energy efficiency. Its fast switching speed allows for precise control of power flow in switch-mode applications, enabling optimum performance in industrial settings. The IGBT's insulated design provides protection against high voltages and mitigates the risk of short circuits, ensuring a high level of safety and reliability. The incorporation of proprietary field-stop trench technology further enhances its performance by reducing switching and conduction losses. Additionally, the IRGP20B60PDPBF boasts a positive temperature coefficient for safe and continuous thermal stability. Packaged in a TO-247 format with an easy-to-mount pin configuration, this IGBT is designed for convenient integration into circuit boards. Its RoHS compliance further underscores its commitment to environmental sustainability

主要特徵

  • The IRGP20B60PDPBF features high current and voltage ratings for reliable operation.
  • It has a compact design for easy heat dissipation and mounting in power electronics applications.
  • This IGBT is designed for high-power switching applications with low conduction loss and fast turn-off time.

應用

  • The IRGP20B60PDPBF is commonly used in applications such as motor control, power supplies, and renewable energy systems
  • It is particularly suitable for high-speed switching and efficient power conversion
  • With its low switching losses and high reliability, this insulated gate bipolar transistor (IGBT) is well-suited for a wide range of industrial and automotive applications

    • 規格

    以下是所選零件的基本參數，涉及零件的特性及其所屬類別。

    Product Category ! IGBT Transistors RoHS Details
    Technology Si Package / Case TO-247-3
    Mounting Style Through Hole Configuration Single
    Collector- Emitter Voltage VCEO Max 600 V Collector-Emitter Saturation Voltage 2.35 V
    Maximum Gate Emitter Voltage - 20 V, + 20 V Continuous Collector Current at 25 C 40 A
    Pd - Power Dissipation 220 W Minimum Operating Temperature - 55 C
    Brand Infineon Technologies Height 20.7 mm
    Length 15.87 mm Product Type ! IGBT Transistors
    Factory Pack Quantity 400 Subcategory IGBTs
    Width 5.31 mm Unit Weight 1.340411 oz

    數據表 PDF

    數據表記錄了器件的特性、絕對最大額定值、應用等，這對於作為器件特定應用的整體指南大有裨益。

    初步規格 IRGP20B60PDPBF PDF 下載

    常見問題解答

    What is IRGP20B60PDPBF?

    The IRGP20B60PDPBF is a Power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed by Infineon Technologies. It is a high-voltage, high-speed switching transistor ideal for high-frequency power applications such as power supplies, motor drives, and inverters.

    How Does IRGP20B60PDPBF Work?

    The IRGP20B60PDPBF operates as a high-power, high-speed switch capable of handling large currents and voltages. It is used to control the flow of power in electronic circuits by acting as an electronically controlled switch, allowing or blocking the flow of current based on the applied voltage to the gate terminal.

    How Many Pins does IRGP20B60PDPBF have and What are the Functions of the Pinout Configuration?

    The IRGP20B60PDPBF is housed in a TO-247AC package, which typically includes the following pinout configuration:

    • GATE: Controls the switching action of the MOSFET.
    • DRAIN: Connects to the high-voltage power source.
    • SOURCE: Connects to the load or ground.

    What are the Pros and Cons of IRGP20B60PDPBF?

    Pros:

    • High Voltage Rating: Suitable for high-voltage applications.
    • High Speed: Capable of high-frequency switching.
    • Low On-Resistance: Enables efficient power handling with minimal voltage drop.
    • Robust Design: Designed to handle high currents and power dissipation.
    • TO-247AC Package: Provides good thermal performance and ease of mounting.

    Cons:

    • Gate Drive Requirements: Requires proper gate drive circuitry for optimal performance.
    • Complexity: May require careful attention to layout and heat dissipation for high-power applications.

    Are There Any Equivalents/Alternatives to IRGP20B60PDPBF for Recommendation?

    Some equivalents to the IRGP20B60PDPBF include the IGBT modules from other manufacturers such as STMicroelectronics, ON Semiconductor, and Toshiba. Alternatives to consider are the IRFP460 and IRFP4668 from Infineon Technologies, which offer similar high-power capabilities.

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