IRF9530NSPBF

有效庫存6,258

P-Channel Silicon Power MOSFET

  • 製造商零件號 # : IRF9530NSPBF

  • 包裝/封裝: TO-252-3

  • 零件狀態 : Active

  • 製造商: Infineon

  • 產品分類 : Single FETs, MOSFETs

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IRF9530NSPBF 數據表

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詳細說明

The IRF9530NSPBF is a Power MOSFET transistor designed for high performance in power applications. It has a P-Channel design with a drain-source voltage of -100V and a continuous drain current rating of -14A. The IRF9530NSPBF features a low on-resistance of 0.18 ohms, which helps to minimize power losses and improve efficiency in circuit designs.This transistor is housed in a TO-263 package, which allows for easy mounting on a printed circuit board. It also features a high power dissipation rating of 75W, making it suitable for a wide range of power applications where high performance and reliability are essential.The IRF9530NSPBF is designed to provide excellent thermal performance, with a junction-to-ambient thermal resistance of 62°C/W. This helps to ensure that the transistor maintains a stable temperature during operation, preventing overheating and potential damage to the component.

主要特徵

  • High voltage handling capability
  • Low leakage current performance
  • Ruggedized for harsh environments
  • Fast recovery time characteristic
  • High frequency operation compatibility
  • Thermal shutdown protection feature

應用

  • Industrial control systems
  • Battery charging
  • Power management

規格

以下是所選零件的基本參數,涉及零件的特性及其所屬類別。

Product Category ! MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case TO-252-3 Transistor Polarity P-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 100 V
Id - Continuous Drain Current 14 A Rds On - Drain-Source Resistance 200 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Qg - Gate Charge 38.7 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature ! + 175 C
Pd - Power Dissipation 3.8 W Channel Mode Enhancement
Brand Infineon Technologies Configuration Single
Fall Time 46 ns Height 2.3 mm
Length 6.5 mm Product Type ! MOSFET
Rise Time ! 58 ns Factory Pack Quantity 1000
Subcategory MOSFETs Transistor Type 1 P-Channel
Type HEXFET Power MOSFET Typical Turn-Off Delay Time 45 ns
Typical Turn-On Delay Time 15 ns Width 6.22 mm
Part # Aliases SP001555856 Unit Weight 0.011640 oz

數據表 PDF

數據表記錄了器件的特性、絕對最大額定值、應用等,這對於作為器件特定應用的整體指南大有裨益。

初步規格 IRF9530NSPBF PDF 下載

常見問題解答

What is IRF9530NSPBF?

The IRF9530NSPBF is a power MOSFET transistor designed by Infineon Technologies. It is optimized for high power, high-speed switching applications, making it suitable for power supplies, motor control, and electronic load switches.

How Does IRF9530NSPBF Work?

The IRF9530NSPBF works by regulating high power and voltage in electronic circuits. As a power MOSFET, it controls the flow of current with its gate-source voltage, enabling efficient and fast switching for power management and control applications.

How Many Pins does IRF9530NSPBF have and What are the Functions of the Pinout Configuration?

The IRF9530NSPBF is housed in a TO-220 package. The pinout configuration includes:

  • GATE: Gate control pin.
  • DRAIN: Power output pin.
  • SOURCE: Ground pin.

What are the Pros and Cons of IRF9530NSPBF?

Pros:

  • High Power: Designed for high power applications.
  • High-Speed Switching: Enables fast and efficient switching operations.
  • Robust Construction: Suitable for demanding environments and applications.

Cons:

  • Drive Voltage: Requires careful consideration of gate drive voltage for optimal performance.
  • Heat Dissipation: May require heat sinking for high-power applications.

Are There Any Equivalents/Alternatives to IRF9530NSPBF for Recommendation?

Equivalents to the IRF9530NSPBF include the IRF540NSPBF also from Infineon Technologies. Alternatives to this MOSFET are the FCPF300N65S3R0 from ON Semiconductor and the STP55NF06L from STMicroelectronics.

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