IRF7811A
The compact IRF7811A is a N-Channel MOSFET transistor presented in a SO form factorIRF7811A
The compact IRF7811A is a N-Channel MOSFET transistor presented in a SO form factor
-
製造商零件號 # : IRF7811A
-
包裝/封裝: 8-SOIC
-
產品分類 : Single FETs, MOSFETs
品質保證
品質保證
從我們的供應鍊網路採購的所有零件都經過嚴格的進貨檢驗流程。 這種細緻的檢查可確保客戶收到的零件是正品並符合要求的標準。 此外,我們還保存這些檢查的詳細記錄,以確保整個供應鏈的透明度和可追溯性。
認證
我們已成功獲得各項認證標準,並建立了自己的專業檢測實驗室。 這確保了我們向客戶提供的每件產品都符合最高的品質標準。 我們遵守嚴格的測試協議,以保持我們產品的一致性和準確性。 為了確保我們的產品是原裝正品,我們還與信譽良好的第三方檢測機構合作進行嚴格的品質測試。 我們對品質的承諾延伸到滿足行業、法律、監管和 ISO 9001:2015 的要求。
運輸與付款
運輸與付款
關於運送
我們通常會在幾個工作日內通過可靠的運輸公司(例如 FedEx、SF、UPS 或 DHL)運送訂單。 我們還支持其他運輸方式。 如果您想詢問具體的運輸細節或費用,請隨時與我們聯繫。
關於付款
我們接受多種支付方式,包括VISA、MasterCard、銀聯、西聯、PayPal等渠道。
如果您有特定的付款方式或想詢問費率和其他詳細信息,請隨時與我們聯繫。
電匯
Paypal
信用卡
西聯匯款
速匯金
服務與包裝
服務與包裝
About After Sales Service
All Parts Extended Quality Guarantee
自發貨之日起 90 天內發起申請。
與我們的工作人員確認退貨或換貨。
保持貨物收到時的原始狀態。
最後請注意,退貨或換貨的資格取決於對退貨商品實際狀況的評估。 在完成退貨或換貨流程之前,我們將評估收到的貨物。 如果您對退貨或換貨有任何疑問或需要進一步幫助,請隨時通過以下方式聯絡我們: [email protected]
關於包裝
在包裝方面,我們的產品均精心包裝在防靜電袋中,以提供ESD防靜電保護。 外包裝堅固耐用且閉合牢固。 我們支持各種包裝方法,例如捲帶式、切帶式、管式或託盤式。
例子
捲帶式
剪膠帶
管或託盤
IRF7811A 數據表
目前的價格方案正在編制中。請聯絡我們的客戶服務團隊獲取最新的價格資訊。感謝您的理解和支援!
詳細說明
The IRF7811A is a N-Channel power MOSFET designed for high efficiency, low voltage applications. It has a maximum voltage rating of 28V and can handle a continuous drain current of up to 11A at a maximum power dissipation of 2.5W. The component is housed in a Surface Mount 8-SO package, making it suitable for compact and densely packed circuit designs. This MOSFET offers a low on-resistance of typically 13mΩ, allowing for efficient power management and reduced heat generation. It is ideal for applications in power supplies, battery management systems, motor control, and other high-current switching applications where low voltage drop and high efficiency are required. The IRF7811A features a gate threshold voltage between 1V to 2.5V, ensuring compatibility with a wide range of control circuits. It also has a low gate charge and high switching speed, enabling fast and precise control of the power flow.
主要特徵
- Robust construction for high reliability
- Low leakage current for minimized energy losses
- Silicon-gate MOSFET for improved performance
- High-frequency switching capabilities for advanced apps
應用
- Precision Motor Control
- Reliable Automotive Systems
- Flexible Industrial Automation
規格
以下是所選零件的基本參數,涉及零件的特性及其所屬類別。
Series | HEXFET® | Package | Tube |
Product Status | Obsolete | FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) | Drain to Source Voltage (Vdss) | 28 V |
Current - Continuous Drain (Id) @ 25°C | 11A (Ta) | Drive Voltage (Max Rds On, Min Rds On) | 4.5V |
Rds On (Max) @ Id, Vgs | 10mOhm @ 11A, 10V | Vgs(th) (Max) @ Id | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 26 nC @ 4.5 V | Vgs (Max) | ±12V |
Input Capacitance (Ciss) (Max) @ Vds | 1760 pF @ 15 V | Power Dissipation (Max) | 2.5W (Ta) |
Operating Temperature ! | -55°C ~ 150°C (TJ) | Mounting Type | Surface Mount |
Supplier Device Package | 8-SO | Package / Case | 8-SOIC (0.154", 3.90mm Width) |
數據表 PDF
數據表記錄了器件的特性、絕對最大額定值、應用等,這對於作為器件特定應用的整體指南大有裨益。
常見問題解答
What is IRF7811A?
The IRF7811A is a HEXFET® Power MOSFET designed by International Rectifier, now a part of Infineon Technologies. It is an N-channel enhancement mode power transistor, suitable for high current switching applications in power supplies, motor control, and battery management systems.
How Does IRF7811A Work?
The IRF7811A operates as a power transistor for switching high current loads. It utilizes the enhancement mode to control the flow of current between the drain and source terminals. The MOSFET can be driven by an appropriate gate voltage to efficiently control power flow in various electronic circuits.
How Many Pins does IRF7811A have and What are the Functions of the Pinout Configuration?
The IRF7811A is housed in a TO-220 package. The pinout configuration includes:
- GATE: Gate terminal for controlling the conduction of the MOSFET.
- DRAIN: Drain terminal for the main current conduction.
- SOURCE: Source terminal connected to the ground or return path for the current.
What are the Pros and Cons of IRF7811A?
Pros:
- High Current Capability: Capable of handling high current loads in power electronics applications.
- Enhancement Mode: Easy to drive and control with appropriate gate voltage.
- Robust Construction: TO-220 package provides mechanical robustness and efficient thermal dissipation.
- Reliability: Designed for long-term and reliable operation in demanding environments.
Cons:
- Gate Drive Voltage: Requires careful consideration of gate drive voltage for optimal performance.
- Gate Capacitance: High gate capacitance may require appropriate driver circuits for fast switching applications.
Are There Any Equivalents/Alternatives to IRF7811A for Recommendation?
Alternatives to the IRF7811A include the IRF7389PbF from Infineon Technologies and the FQP30N06L from Fairchild Semiconductor as comparable N-channel power MOSFETs.
推薦零件
-
IRF4905SPBF: Power MOSFET with P-Type Silicon, 55V Voltage Tolerance, and 70A Current Capacity, Encapsulated in a D2PAK Tube
製造商: Infineon Technologies 包裝/箱: TO252-3
5,148 有存貨
貨物週期: 3~7 天
最小訂購量為 1
-
5,569 有存貨
貨物週期: 3~7 天
最小訂購量為 1
-
N-channel MOSFET with HEXFET technology, rated for a maximum voltage of 20V and featuring a low on-resistance of 8.5mΩ with a gate charge of 23nC
製造商: INFINEON 包裝/箱: D2PAK
5,788 有存貨
貨物週期: 3~7 天
最小訂購量為 1
-
7,238 有存貨
貨物週期: 3~7 天
最小訂購量為 1
-
IRF3808SPBF
$0.700 The IRF3808SPBF from Infineon is a N-channel MOSFET designed to handle currents up to 106 A and voltages up to 75 V
製造商: Infineon 包裝/箱: TO-252-3
6,881 有存貨
貨物週期: 3~7 天
最小訂購量為 1
-
The IRFI4321PBF is a TO-220-3 packaged MOSFET featuring a single N-Channel design
製造商: Infineon 包裝/箱: FULLPAK220
5,219 有存貨
貨物週期: 3~7 天
最小訂購量為 1
-
7,826 有存貨
貨物週期: 3~7 天
最小訂購量為 1
-
8,838 有存貨
貨物週期: 3~7 天
最小訂購量為 1