IRF7478

有效庫存4,578

8-pin Surface Mount Device (SMD) MOSFET designed for N-channel operation with a maximum voltage of 60V and a current capacity of 7A

  • 製造商零件號 # : IRF7478

  • 包裝/封裝: SO-8

  • 零件狀態 : ACTIVE

  • 製造商: Infineon

  • 產品分類 : Single FETs, MOSFETs

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IRF7478 數據表

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詳細說明

The IRF7478 power MOSFET transistor is a top-of-the-line component designed for demanding high-power, high-frequency applications. With its impressive 40V voltage rating and continuous drain current rating of 120A, this N-channel device is a powerhouse in the world of electronics. Its ultra-low on-resistance of 2.8 mΩ ensures maximum efficiency, making it a standout choice for projects where minimizing power loss is crucial

主要特徵

  • Improved thermal performance
  • Compact design
  • Rapid switching frequency
  • High current handling

應用

  • Next-generation automotive applications
  • Customizable power management
  • Compact DC-DC converters

規格

以下是所選零件的基本參數,涉及零件的特性及其所屬類別。

Moisture Sensitivity Level 1 Mounting SMD
Package SO-8 Ptot max 2.5 W
RthJA max 50.0 K/W Tj max 150.0 °C
VDS max 60.0 V VGS max 20.0 V
Polarity N RDS (on) max 30.0 mΩ
VGS(th) max 3.0 V VGS(th) min 1.0 V
ID max 7.0 A

數據表 PDF

數據表記錄了器件的特性、絕對最大額定值、應用等,這對於作為器件特定應用的整體指南大有裨益。

初步規格 IRF7478 PDF 下載

常見問題解答

What is IRF7478?

The IRF7478 is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed by Infineon Technologies. It is ideal for high-current switching applications in power supplies, motor control, and inverters.

How Does IRF7478 Work?

The IRF7478 works as a voltage-controlled switch, allowing or blocking the flow of current between the drain and source terminals based on the gate voltage. By applying a voltage to the gate terminal, the MOSFET can control the current flow through the device, enabling efficient power management and switching capabilities.

How Many Pins does IRF7478 have and What are the Functions of the Pinout Configuration?

The IRF7478 is typically packaged in a TO-263 or D2PAK package, which contains three main pins:

  • GATE: The gate terminal controls the switching behavior of the MOSFET.
  • DRAIN: The drain terminal is where the output current flows out of the MOSFET.
  • SOURCE: The source terminal is where the input current flows into the MOSFET.

What are the Pros and Cons of IRF7478?

Pros:

  • High Current Capability: Suitable for high-power applications due to its high current-handling capacity.
  • Low On-Resistance: Provides efficient power management with low conduction losses.
  • Fast Switching Speed: Allows for rapid switching transitions, minimizing power dissipation.
  • Robustness: Offers good thermal performance and ruggedness for reliable operation in harsh conditions.

Cons:

  • Gate Drive Voltage: Requires appropriate gate drive voltage levels for optimal performance.
  • Heat Dissipation: May require heat sinking or thermal management in high-power applications.
  • Complexity: MOSFET characteristics such as threshold voltage and capacitances need to be considered for proper circuit design.

Are There Any Equivalents/Alternatives to IRF7478 for Recommendation?

  • Alternative MOSFETs similar to the IRF7478 include the FQP47P06 from Fairchild Semiconductor and the IRF9540N from Infineon Technologies.
  • Equivalents to the IRF7478 in terms of power MOSFETs include the STP75NF75 from STMicroelectronics and the PSMN7R0-30YLC from NXP Semiconductors.

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