PC28F512M29EWHD
Flash memory with NOR architecture and MLC technology in a parallel configurationPC28F512M29EWHD
Flash memory with NOR architecture and MLC technology in a parallel configuration
品質保證
品質保證
從我們的供應鍊網路採購的所有零件都經過嚴格的進貨檢驗流程。 這種細緻的檢查可確保客戶收到的零件是正品並符合要求的標準。 此外,我們還保存這些檢查的詳細記錄,以確保整個供應鏈的透明度和可追溯性。
![ship1](/img/ship1.png)
![ship2](/img/ship2.png)
![ship3](/img/ship3.png)
![ship4](/img/ship4.png)
![ship5](/img/ship5.png)
![ship6](/img/ship6.png)
認證
我們已成功獲得各項認證標準,並建立了自己的專業檢測實驗室。 這確保了我們向客戶提供的每件產品都符合最高的品質標準。 我們遵守嚴格的測試協議,以保持我們產品的一致性和準確性。 為了確保我們的產品是原裝正品,我們還與信譽良好的第三方檢測機構合作進行嚴格的品質測試。 我們對品質的承諾延伸到滿足行業、法律、監管和 ISO 9001:2015 的要求。
運輸與付款
運輸與付款
關於運送
我們通常會在幾個工作日內通過可靠的運輸公司(例如 FedEx、SF、UPS 或 DHL)運送訂單。 我們還支持其他運輸方式。 如果您想詢問具體的運輸細節或費用,請隨時與我們聯繫。
![questionContent1](/img/questionContent1.png)
![questionContent2](/img/questionContent2.png)
![questionContent3](/img/questionContent3.png)
![questionContent4](/img/questionContent4.png)
![ctc](/img//questionContentctc.png)
![pelican](/img//questionContentpelican.png)
![express](/img//questionContentexpress.png)
![chunghwa post](/img//questionContentchunghwapost.png)
關於付款
我們接受多種支付方式,包括VISA、MasterCard、銀聯、西聯、PayPal等渠道。
如果您有特定的付款方式或想詢問費率和其他詳細信息,請隨時與我們聯繫。
![wire](/img/wire.png)
電匯
![questionContent7](/img/questionContent7.png)
Paypal
![cc](/img/cc.png)
信用卡
![western](/img/western.png)
西聯匯款
![mg](/img/mg.png)
速匯金
服務與包裝
服務與包裝
About After Sales Service
All Parts Extended Quality Guarantee
自發貨之日起 90 天內發起申請。
與我們的工作人員確認退貨或換貨。
保持貨物收到時的原始狀態。
最後請注意,退貨或換貨的資格取決於對退貨商品實際狀況的評估。 在完成退貨或換貨流程之前,我們將評估收到的貨物。 如果您對退貨或換貨有任何疑問或需要進一步幫助,請隨時通過以下方式聯絡我們: [email protected]
關於包裝
在包裝方面,我們的產品均精心包裝在防靜電袋中,以提供ESD防靜電保護。 外包裝堅固耐用且閉合牢固。 我們支持各種包裝方法,例如捲帶式、切帶式、管式或託盤式。
![pg](/img/pg.png)
例子
![捲帶式](/img/Tape and Reel.png)
捲帶式
![剪膠帶](/img/Cut Tape.png)
剪膠帶
![管或託盤](/img/Tube or Tray.png)
管或託盤
PC28F512M29EWHD 數據表
![no-price](/img/no-price.jpg)
目前的價格方案正在編制中。請聯絡我們的客戶服務團隊獲取最新的價格資訊。感謝您的理解和支援!
詳細說明
General Description Micron's 65nm device is the latest generation of StrataFlash® wireless memory featuring flexible, multiple-partition, dual-operation architecture. The device provides high performance, asynchronous read mode and synchronous-burst read mode using 1.8V low-voltage, multilevel cell (MLC) technology.Features • High-Performance Read, Program and Erase – 96 ns initial read access – 108 MHz with zero wait-state synchronous burst reads: 7 ns clock-to-data output – 133 MHz with zero wait-state synchronous burst reads: 5.5 ns clock-to-data output – 8-, 16-, and continuous-word synchronous-burst Reads – Programmable WAIT configuration – Customer-configurable output driver impedance – Buffered Programming: 2.0 μs/Word (typ), 512-Mbit 65 nm – Block Erase: 0.9 s per block (typ) – 20 μs (typ) program/erase suspend • Architecture – 16-bit wide data bus – Multi-Level Cell Technology – Symmetrically-Blocked Array Architecture – 256-Kbyte Erase Blocks – 1-Gbit device: Eight 128-Mbit partitions – 512-Mbit device: Eight 64-Mbit partitions – 256-Mbit device: Eight 32-Mbit partitions – 128-Mbit device: Eight 16-Mbit partitions – Read-While-Program and Read-While-Erase – Status Register for partition/device status – Blank Check feature • Quality and Reliability – Expanded temperature: –30 °C to +85 °C – Minimum 100,000 erase cycles per block – 65nm Process Technology • Power – Core voltage: 1.7 V - 2.0 V – I/O voltage: 1.7 V - 2.0 V – Standby current: 60 μA (typ) for 512-Mbit, 65 nm – Deep Power-Down mode: 2 μA (typ) – Automatic Power Savings mode – 16-word synchronous-burst read current: 23 mA (typ) @ 108 MHz; 24 mA (typ) @ 133 MHz • Software – Micron® Flash data integrator (FDI) optimized – Basic command set (BCS) and extended command set (ECS) compatible – Common Flash interface (CFI) capable • Security – One-time programmable (OTP) space 64 unique factory device identifier bits 2112 user-programmable OTP bits – Absolute write protection: VPP = GND – Power-transition erase/program lockout – Individual zero latency block locking – Individual block lock-down • Density and packaging – 128Mb, 256Mb, 512Mbit, and 1-Gbit – Address-data multiplexed and non-multiplexed interfaces – 64-Ball Easy BGA
![PC28F512M29EWHD PC28F512M29EWHD](/files/uploads/product/b/67af7c0c-ce77-434b-2696-08dbc6589f20.webp)
主要特徵
- High-Performance Read, Program and Erase
- – 96 ns initial read access
- – 108 MHz with zero wait-state synchronous burst reads: 7 ns clock-to-data output
- – 133 MHz with zero wait-state synchronous burst reads: 5.5 ns clock-to-data output
- – 8-, 16-, and continuous-word synchronous-burst Reads
- – Programmable WAIT configuration
- – Customer-configurable output driver impedance
- – Buffered Programming: 2.0 μs/Word (typ), 512-Mbit 65 nm
- – Block Erase: 0.9 s per block (typ)
- – 20 μs (typ) program/erase suspend
- Architecture
- – 16-bit wide data bus
- – Multi-Level Cell Technology
- – Symmetrically-Blocked Array Architecture
- – 256-Kbyte Erase Blocks
- – 1-Gbit device: Eight 128-Mbit partitions
- – 512-Mbit device: Eight 64-Mbit partitions
- – 256-Mbit device: Eight 32-Mbit partitions
- – 128-Mbit device: Eight 16-Mbit partitions
- – Read-While-Program and Read-While-Erase
- – Status Register for partition/device status
- – Blank Check feature
- Quality and Reliability
- – Expanded temperature: –30 °C to +85 °C
- – Minimum 100,000 erase cycles per block
- – 65nm Process Technology
- Power
- – Core voltage: 1.7 V - 2.0 V
- – I/O voltage: 1.7 V - 2.0 V
- – Standby current: 60 μA (typ) for 512-Mbit, 65 nm
- – Deep Power-Down mode: 2 μA (typ)
- – Automatic Power Savings mode
- – 16-word synchronous-burst read current: 23 mA (typ) @ 108 MHz; 24 mA (typ) @ 133 MHz
- Software
- – Micron® Flash data integrator (FDI) optimized
- – Basic command set (BCS) and extended command set (ECS) compatible
- – Common Flash interface (CFI) capable
- Security
- – One-time programmable (OTP) space
- 64 unique factory device identifier bits
- 2112 user-programmable OTP bits
- – Absolute write protection: VPP = GND
- – Power-transition erase/program lockout
- – Individual zero latency block locking
- – Individual block lock-down
- Density and packaging
- – 128Mb, 256Mb, 512Mbit, and 1-Gbit
- – Address-data multiplexed and non-multiplexed interfaces
- – 64-Ball Easy BGA
![MICRON Inventory MICRON Inventory](/files/uploads/inventory/micron/micron1.jpg)
規格
以下是所選零件的基本參數,涉及零件的特性及其所屬類別。
Pbfree Code | Yes | Rohs Code | Yes |
Part Life Cycle Code | Obsolete | Reach Compliance Code | compliant |
ECCN Code | EAR99 | HTS Code ! | 8542.32.00.51 |
Access Time-Max | 100 ns | Alternate Memory Width | 8 |
Command User Interface | YES | Common Flash Interface | YES |
Data Polling | YES | JESD-30 Code | R-PBGA-B64 |
JESD-609 Code | e1 | Length | 13 mm |
Memory Density | 536870912 bit | Memory IC Type | FLASH |
Memory Width | 16 | Number of Functions | 1 |
Number of Sectors/Size | 512 | Number of Terminals | 64 |
Number of Words | 33554432 words | Number of Words Code | 32000000 |
Operating Mode ! | ASYNCHRONOUS | Operating Temperature-Max | 85 °C |
Operating Temperature-Min | -40 °C | Organization | 32MX16 |
Package Body Material | PLASTIC/EPOXY | Package Code | LBGA |
Package Equivalence Code | BGA64,8X8,40 | Package Shape | RECTANGULAR |
Package Style | GRID ARRAY, LOW PROFILE | Page Size | 16/32 words |
Parallel/Serial | PARALLEL | Power Supplies ! | 3/3.3 V |
Programming Voltage ! | 2.7 V | Qualification Status ! | Not Qualified |
Ready/Busy | YES | Seated Height-Max | 1.4 mm |
Sector Size | 128K | Standby Current-Max | 0.000225 A |
Supply Current-Max | 0.031 mA | Supply Voltage-Max (Vsup) | 3.6 V |
Supply Voltage-Min (Vsup) | 2.7 V | Supply Voltage-Nom (Vsup) | 3 V |
Surface Mount ! | YES | Technology | CMOS |
Temperature Grade ! | INDUSTRIAL | Terminal Finish | TIN SILVER COPPER |
Terminal Form ! | BALL | Terminal Pitch ! | 1 mm |
Terminal Position | BOTTOM | Toggle Bit | YES |
Type | NOR TYPE | Width | 11 mm |
Specification Comparison
數據表 PDF
數據表記錄了器件的特性、絕對最大額定值、應用等,這對於作為器件特定應用的整體指南大有裨益。
推薦零件
-
NOR Flash memory chip with parallel and serial interfaces, operating at 1.8V with a capacity of 1G-bit and organized as 64M x 16
製造商: Micron Technology 包裝/箱: BGA-64
6,488 有存貨
貨物週期: 3~7 天
最小訂購量為 1
-
PC28F256P30TFE
$4.258 16 megabyte by 16 flash 1.8 volt programmable read-only memory, plastic ball grid array 64
製造商: Alliance Memory 包裝/箱: BGA-64
3,764 有存貨
貨物週期: 3~7 天
最小訂購量為 1
-
8F00AP30BFA also boasts a compact PBGA64 form factor
製造商: Micron Technology 包裝/箱: BGA
5,950 有存貨
貨物週期: 3~7 天
最小訂購量為 1
-
PC28F256P33BFE
$6.605 Flash memory chip with a capacity of 16 megabytes by 16 bits, operating at a speed of 95 nanoseconds, in a PBGA64 package with a BGA-64 configuration
製造商: Alliance 包裝/箱: LBGA-64
6,587 有存貨
貨物週期: 3~7 天
最小訂購量為 1
-
16x64/64 Mbit NOR Flash in parallel configuration
製造商: Micron Technology 包裝/箱: TBGA-64
6,596 有存貨
貨物週期: 3~7 天
最小訂購量為 1
-
3,544 有存貨
貨物週期: 3~7 天
最小訂購量為 1
-
Upgrade your device with the PC28F128P33BF60A EASYBGA-64(10x13) NOR flash memory for improved storage capacity and data retention
製造商: MICRON 包裝/箱: BGA-64
4,865 有存貨
貨物週期: 3~7 天
最小訂購量為 1
-
PC28F640P30TF65A
$1.581 The PC28F640P30TF65A is a high-performance Flash Memory module from Numonyx
製造商: MICRON 包裝/箱: 64-TBGA
3,866 有存貨
貨物週期: 3~7 天
最小訂購量為 1
-
6,480 有存貨
貨物週期: 3~7 天
最小訂購量為 1
-
PC28F256P33TFE
$6.839 EZBGA-packaged NOR Flash memory chip providing 256M bits of storage capacity
製造商: Micron Technology 包裝/箱: BGA-64
7,488 有存貨
貨物週期: 3~7 天
最小訂購量為 1
-
PC28F128M29EWLA
$2.648 PC28F128M29EWLA NOR Flash Memory Module FBGA-64(11x13)
製造商: Micron Technology 包裝/箱: BGA-64
5,537 有存貨
貨物週期: 3~7 天
最小訂購量為 1
-
This PBGA64 package measures 8 by 10 millimeters in size and has a low profile height of 1
製造商: Micron 包裝/箱: BGA-64
5,902 有存貨
貨物週期: 3~7 天
最小訂購量為 1
-
3,508 有存貨
貨物週期: 3~7 天
最小訂購量為 1
-
3,879 有存貨
貨物週期: 3~7 天
最小訂購量為 1
-
Flash memory chip with a capacity of 64 megabits by 16
製造商: Micron Technology 包裝/箱: BGA
4,370 有存貨
貨物週期: 3~7 天
最小訂購量為 1