PC28F00AP33BFA

Parallel and Serial Interface
6,480 有效庫存

PC28F00AP33BFA

有效庫存6,480

Parallel and Serial Interface

  • 製造商零件號 # : PC28F00AP33BFA

  • 包裝/封裝: 64-TBGA

  • 製造商: MICRON

  • 產品分類 : Memory

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服務與包裝

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About After Sales Service

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例子

捲帶式

捲帶式

剪膠帶

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管或託盤

管或託盤

PC28F00AP33BFA 數據表
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詳細說明

General Description Micron's 65nm device is the latest generation of StrataFlash® wireless memory featuring flexible, multiple-partition, dual-operation architecture. The device provides high performance, asynchronous read mode and synchronous-burst read mode using 1.8V low-voltage, multilevel cell (MLC) technology.Features • High-Performance Read, Program and Erase – 96 ns initial read access – 108 MHz with zero wait-state synchronous burst reads: 7 ns clock-to-data output – 133 MHz with zero wait-state synchronous burst reads: 5.5 ns clock-to-data output – 8-, 16-, and continuous-word synchronous-burst Reads – Programmable WAIT configuration – Customer-configurable output driver impedance – Buffered Programming: 2.0 μs/Word (typ), 512-Mbit 65 nm – Block Erase: 0.9 s per block (typ) – 20 μs (typ) program/erase suspend • Architecture – 16-bit wide data bus – Multi-Level Cell Technology – Symmetrically-Blocked Array Architecture – 256-Kbyte Erase Blocks – 1-Gbit device: Eight 128-Mbit partitions – 512-Mbit device: Eight 64-Mbit partitions – 256-Mbit device: Eight 32-Mbit partitions – 128-Mbit device: Eight 16-Mbit partitions – Read-While-Program and Read-While-Erase – Status Register for partition/device status – Blank Check feature • Quality and Reliability – Expanded temperature: –30 °C to +85 °C – Minimum 100,000 erase cycles per block – 65nm Process Technology • Power – Core voltage: 1.7 V - 2.0 V – I/O voltage: 1.7 V - 2.0 V – Standby current: 60 μA (typ) for 512-Mbit, 65 nm – Deep Power-Down mode: 2 μA (typ) – Automatic Power Savings mode – 16-word synchronous-burst read current: 23 mA (typ) @ 108 MHz; 24 mA (typ) @ 133 MHz • Software – Micron® Flash data integrator (FDI) optimized – Basic command set (BCS) and extended command set (ECS) compatible – Common Flash interface (CFI) capable • Security – One-time programmable (OTP) space 64 unique factory device identifier bits 2112 user-programmable OTP bits – Absolute write protection: VPP = GND – Power-transition erase/program lockout – Individual zero latency block locking – Individual block lock-down • Density and packaging – 128Mb, 256Mb, 512Mbit, and 1-Gbit – Address-data multiplexed and non-multiplexed interfaces – 64-Ball Easy BGA

PC28F00AP33BFA

主要特徵

  • High-Performance Read, Program and Erase
  • – 96 ns initial read access
  • – 108 MHz with zero wait-state synchronous burst reads: 7 ns clock-to-data output
  • – 133 MHz with zero wait-state synchronous burst reads: 5.5 ns clock-to-data output
  • – 8-, 16-, and continuous-word synchronous-burst Reads
  • – Programmable WAIT configuration
  • – Customer-configurable output driver impedance
  • – Buffered Programming: 2.0 μs/Word (typ), 512-Mbit 65 nm
  • – Block Erase: 0.9 s per block (typ)
  • – 20 μs (typ) program/erase suspend
  • Architecture
  • – 16-bit wide data bus
  • – Multi-Level Cell Technology
  • – Symmetrically-Blocked Array Architecture
  • – 256-Kbyte Erase Blocks
  • – 1-Gbit device: Eight 128-Mbit partitions
  • – 512-Mbit device: Eight 64-Mbit partitions
  • – 256-Mbit device: Eight 32-Mbit partitions
  • – 128-Mbit device: Eight 16-Mbit partitions
  • – Read-While-Program and Read-While-Erase
  • – Status Register for partition/device status
  • – Blank Check feature
  • Quality and Reliability
  • – Expanded temperature: –30 °C to +85 °C
  • – Minimum 100,000 erase cycles per block
  • – 65nm Process Technology
  • Power
  • – Core voltage: 1.7 V - 2.0 V
  • – I/O voltage: 1.7 V - 2.0 V
  • – Standby current: 60 μA (typ) for 512-Mbit, 65 nm
  • – Deep Power-Down mode: 2 μA (typ)
  • – Automatic Power Savings mode
  • – 16-word synchronous-burst read current: 23 mA (typ) @ 108 MHz; 24 mA (typ) @ 133 MHz
  • Software
  • – Micron® Flash data integrator (FDI) optimized
  • – Basic command set (BCS) and extended command set (ECS) compatible
  • – Common Flash interface (CFI) capable
  • Security
  • – One-time programmable (OTP) space
  • 64 unique factory device identifier bits
  • 2112 user-programmable OTP bits
  • – Absolute write protection: VPP = GND
  • – Power-transition erase/program lockout
  • – Individual zero latency block locking
  • – Individual block lock-down
  • Density and packaging
  • – 128Mb, 256Mb, 512Mbit, and 1-Gbit
  • – Address-data multiplexed and non-multiplexed interfaces
  • – 64-Ball Easy BGA
MICRON Inventory

規格

以下是所選零件的基本參數，涉及零件的特性及其所屬類別。

Pbfree Code Yes Rohs Code Yes
Part Life Cycle Code Obsolete Part Package Code BGA
Pin Count ! 64 Reach Compliance Code compliant
ECCN Code EAR99 HTS Code ! 8542.32.00.51
Access Time-Max 95 ns Additional Feature ! BOTTOM BOOT; IT ALSO OPERATES IN ASYNCHRONOUS MODE
Boot Block BOTTOM JESD-30 Code R-PBGA-B64
JESD-609 Code e1 Length 10 mm
Memory Density 1073741824 bit Memory IC Type FLASH
Memory Width 16 Number of Functions 1
Number of Terminals 64 Number of Words 67108864 words
Number of Words Code 64000000 Operating Mode ! SYNCHRONOUS
Operating Temperature-Max 85 °C Operating Temperature-Min -40 °C
Organization 64MX16 Package Body Material PLASTIC/EPOXY
Package Code TBGA Package Shape RECTANGULAR
Package Style GRID ARRAY, THIN PROFILE Parallel/Serial PARALLEL
Programming Voltage ! 3 V Seated Height-Max 1.2 mm
Supply Voltage-Max (Vsup) 3.6 V Supply Voltage-Min (Vsup) 2.3 V
Supply Voltage-Nom (Vsup) 3 V Surface Mount ! YES
Technology CMOS Temperature Grade ! INDUSTRIAL
Terminal Finish TIN SILVER COPPER Terminal Form ! BALL
Terminal Pitch ! 1 mm Terminal Position BOTTOM
Width 8 mm

Specification Comparison

PC28F00AP33BFA vs PC28F00AP30BFA vs PC28F00AP30EFA PC28F00AP33TFA vs PC28F00AP33BFA vs PC28F00AP30BFA

數據表 PDF

數據表記錄了器件的特性、絕對最大額定值、應用等，這對於作為器件特定應用的整體指南大有裨益。

初步規格 PC28F00AP33BFA PDF 下載

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