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PC28F256P33TFE
EZBGA-packaged NOR Flash memory chip providing 256M bits of storage capacityPC28F256P33TFE
EZBGA-packaged NOR Flash memory chip providing 256M bits of storage capacity
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製造商零件號 # : PC28F256P33TFE
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包裝/封裝: BGA-64
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製造商: Micron Technology
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產品分類 : Memory
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PC28F256P33TFE 數據表
價格 (USD)
| 數量 | 單價 | 總價 |
|---|---|---|
| 1 | $18.041 | $18.04 |
| 192 | $7.199 | $1,382.21 |
| 480 | $6.959 | $3,340.32 |
| 960 | $6.839 | $6,565.44 |
這些價格會受到市場波動的影響，需要提交報價才能取得最新價格。
詳細說明
The PC28F256P33TFE from Micron Technology is a cutting-edge flash memory component designed to meet the demands of modern electronic devices. Its 256Mb (32MB) capacity and 3.3-volt power supply ensure high performance, while the maximum read speed of 133 MHz and program/erase cycle endurance of 100,000 cycles make it a reliable choice for data storage. With support for standard flash memory interfaces, synchronous and asynchronous operations, and a page size of 2KB, this component is well-suited for applications such as solid-state drives, digital cameras, set-top boxes, and industrial automation
主要特徵
- High performance
- — 85/88 ns initial access
- — 40 MHz with zero wait states, 20 ns clock-to data output synchronous-burst read mode
- — 25 ns asynchronous-page read mode
- — 4-, 8-, 16-, and continuous-word burst mode
- — Buffered Enhanced Factory Programming (BEFP) at 5 µs/byte (Typ)
- — 1.8 V buffered programming at 7 µs/byte (Typ)
- Architecture
- — Multi-Level Cell Technology: Highest Density at Lowest Cost
- — Asymmetrically-blocked architecture
- — Four 32-KByte parameter blocks: top or bottom configuration
- — 128-KByte main blocks
- Voltage and Power
- —VCC(core) voltage: 1.7 V – 2.0 V
- —VCCQ (I/O) voltage: 1.7 V – 3.6 V
- — Standby current: 55 µA (Typ) for 256-Mbit
- — 4-Word synchronous read current: 13 mA (Typ) at 40 MHz
- Quality and Reliability
- — Operating temperature: –40 °C to +85 °C
- 1-Gbit in SCSP is –30 °C to +85 °C
- — Minimum 100,000 erase cycles per block
- — ETOX™ VIII process technology (130 nm)
- Security
- — One-Time Programmable Registers:
- 64 unique factory device identifier bits
- 64 user-programmable OTP bits
- Additional 2048 user-programmable OTP bits
- — Selectable OTP Space in Main Array:
- 4x32KB parameter blocks + 3x128KB main blocks (top or bottom configuration)
- — Absolute write protection: VPP= VSS
- — Power-transition erase/program lockout
- — Individual zero-latency block locking
- — Individual block lock-down
- Software
- — 20 µs (Typ) program suspend
- — 20 µs (Typ) erase suspend
- —Intel® Flash Data Integrator optimized
- — Basic Command Set and Extended Command Set compatible
- — Common Flash Interface capable
- Density and Packaging
- — 64/128/256-Mbit densities in 56-Lead TSOP package
- — 64/128/256/512-Mbit densities in 64-Ball Intel®Easy BGA package
- — 64/128/256/512-Mbit and 1-Gbit densities in Intel®QUAD+ SCSP
- — 16-bit wide data bus
規格
以下是所選零件的基本參數，涉及零件的特性及其所屬類別。
| Product Category ! | NOR Flash | Mounting Style | SMD/SMT |
| Package / Case | BGA-64 | Series | P33 |
| Memory Size ! | 256 Mbit | Supply Voltage - Min | 2.3 V |
| Supply Voltage - Max | 3.6 V | Active Read Current - Max | 50 mA |
| Interface Type | Parallel | Maximum Clock Frequency | 52 MHz |
| Organization | 16 M x 16 | Data Bus Width | 16 bit |
| Timing Type | Asynchronous, Synchronous | Minimum Operating Temperature | - 40 C |
| Maximum Operating Temperature ! | + 85 C | Brand | Micron |
| Memory Type ! | NOR | Product Type ! | NOR Flash |
| Speed | 95 ns | Standard | Common Flash Interface (CFI) |
| Factory Pack Quantity | 864 | Subcategory | Memory & Data Storage |
| Type | Boot Block |
Specification Comparison
數據表 PDF
數據表記錄了器件的特性、絕對最大額定值、應用等，這對於作為器件特定應用的整體指南大有裨益。
常見問題解答
What is PC28F256P33TFE?
The PC28F256P33TFE is a 256Mb (32MB) NOR flash memory device designed by Micron. It is suitable for various embedded applications such as automotive, industrial, and networking that require non-volatile storage and high reliability.
How Does PC28F256P33TFE Work?
The PC28F256P33TFE operates by storing data in a non-volatile memory array using NOR flash technology. It allows random access to any memory location, making it suitable for code storage and data storage in embedded systems. The device features high endurance and reliability, ensuring data integrity over an extended operating lifespan.
How Many Pins does PC28F256P33TFE have and What are the Functions of the Pinout Configuration?
The PC28F256P33TFE is housed in a 63-ball VFBGA (Very Fine Pitch Ball Grid Array) package. The pinout configuration includes:
- DQ0-DQ15: Data input/output pins for the memory array.
- A0-A18: Address input pins for memory addressing.
- CE#: Chip Enable pin for device activation.
- RY/BY#: Ready/Busy output pin indicating operation status.
- WE#: Write Enable pin for write operations.
- OE#: Output Enable pin for data output operations.
- VCC, VSS: Power supply and ground pins, respectively.
What are the Pros and Cons of PC28F256P33TFE?
Pros:
- High Capacity: Offers 256Mb (32MB) of non-volatile storage for code and data.
- Reliability: Provides high endurance and reliability for embedded applications.
- Random Access: Allows random access read and execute operations for code storage.
- Compact Package: The VFBGA package offers a compact footprint for space-constrained designs.
- Wide Temperature Range: Suitable for industrial and automotive applications with extended temperature requirements.
Cons:
- Complex Interface: NOR flash memory devices may require complex interfacing compared to simpler storage solutions.
- Cost: Higher storage capacity and reliability may come at a higher cost compared to lower-capacity alternatives.
- Programming Overheads: Programming and erasing flash memory may require specific considerations for operational efficiency.
Are There Any Equivalents/Alternatives to PC28F256P33TFE for Recommendation?
- The S29GL256P from Cypress Semiconductor is a comparable NOR flash memory device with similar features.
- Alternatives to the PC28F256P33TFE include the AM29LV256M from AMD and the W25Q256JV from Winbond.
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