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PC28F256P30BFE
16x64/64 Mbit NOR Flash in parallel configurationPC28F256P30BFE
16x64/64 Mbit NOR Flash in parallel configuration
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製造商零件號 # : PC28F256P30BFE
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包裝/封裝: TBGA-64
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零件狀態 : Active
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製造商: Micron Technology
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產品分類 : Memory
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PC28F256P30BFE 數據表
目前的價格方案正在編制中。請聯絡我們的客戶服務團隊獲取最新的價格資訊。感謝您的理解和支援!
詳細說明
The PC28F256P30BFE is a high-capacity NAND flash memory chip from Intel designed for reliable and efficient data storage in various electronic devices. With a storage capacity of 256 megabits and a single power supply voltage of 3.3V, this chip offers a versatile solution for a wide range of applications. Its organized block and page structure allows for efficient data management, while the support for synchronous and asynchronous read operations ensures compatibility with different systems. The fast page read time of 30 nanoseconds and block erase time of 2 milliseconds make it ideal for quick data access and management. Additionally, the multiple block erase capability further enhances its performance by enabling faster data erasure
主要特徵
- High performance
- — 85/88 ns initial access
- — 40 MHz with zero wait states, 20 ns clock-to data output synchronous-burst read mode
- — 25 ns asynchronous-page read mode
- — 4-, 8-, 16-, and continuous-word burst mode
- — Buffered Enhanced Factory Programming (BEFP) at 5 µs/byte (Typ)
- — 1.8 V buffered programming at 7 µs/byte (Typ)
- Architecture
- — Multi-Level Cell Technology: Highest Density at Lowest Cost
- — Asymmetrically-blocked architecture
- — Four 32-KByte parameter blocks: top or bottom configuration
- — 128-KByte main blocks
- Voltage and Power
- —VCC(core) voltage: 1.7 V – 2.0 V
- —VCCQ (I/O) voltage: 1.7 V – 3.6 V
- — Standby current: 55 µA (Typ) for 256-Mbit
- — 4-Word synchronous read current: 13 mA (Typ) at 40 MHz
- Quality and Reliability
- — Operating temperature: –40 °C to +85 °C
- 1-Gbit in SCSP is –30 °C to +85 °C
- — Minimum 100,000 erase cycles per block
- — ETOX™ VIII process technology (130 nm)
- Security
- — One-Time Programmable Registers:
- 64 unique factory device identifier bits
- 64 user-programmable OTP bits
- Additional 2048 user-programmable OTP bits
- — Selectable OTP Space in Main Array:
- 4x32KB parameter blocks + 3x128KB main blocks (top or bottom configuration)
- — Absolute write protection: VPP= VSS
- — Power-transition erase/program lockout
- — Individual zero-latency block locking
- — Individual block lock-down
- Software
- — 20 µs (Typ) program suspend
- — 20 µs (Typ) erase suspend
- —Intel® Flash Data Integrator optimized
- — Basic Command Set and Extended Command Set compatible
- — Common Flash Interface capable
- Density and Packaging
- — 64/128/256-Mbit densities in 56-Lead TSOP package
- — 64/128/256/512-Mbit densities in 64-Ball Intel®Easy BGA package
- — 64/128/256/512-Mbit and 1-Gbit densities in Intel®QUAD+ SCSP
- — 16-bit wide data bus
規格
以下是所選零件的基本參數，涉及零件的特性及其所屬類別。
| Product Category ! | NOR Flash | Mounting Style | SMD/SMT |
| Package / Case | BGA-64 | Series | P30 |
| Memory Size ! | 256 Mbit | Supply Voltage - Min | 1.7 V |
| Supply Voltage - Max | 2 V | Active Read Current - Max | 50 mA |
| Interface Type | Parallel | Maximum Clock Frequency | 52 MHz |
| Organization | 16 M x 16 | Data Bus Width | 16 bit |
| Timing Type | Asynchronous, Synchronous | Minimum Operating Temperature | - 40 C |
| Maximum Operating Temperature ! | + 85 C | Brand | Micron |
| Memory Type ! | NOR | Product Type ! | NOR Flash |
| Speed | 100 ns | Standard | Common Flash Interface (CFI) |
| Factory Pack Quantity | 864 | Subcategory | Memory & Data Storage |
| Type | Boot Block |
Specification Comparison
數據表 PDF
數據表記錄了器件的特性、絕對最大額定值、應用等，這對於作為器件特定應用的整體指南大有裨益。
常見問題解答
What is PC28F256P30BFE?
The PC28F256P30BFE is a 256 Mb (32 M x 8) parallel NOR flash memory device manufactured by Intel Corporation. It is commonly used in embedded systems, networking equipment, automotive electronics, and other applications requiring non-volatile memory storage.
How Does PC28F256P30BFE Work?
The PC28F256P30BFE operates as a non-volatile memory storage device that can retain data even when power is removed. It uses a parallel interface for fast data access and storage. The flash memory stores information in memory cells and can be read from and written to for data retrieval and updates.
How Many Pins does PC28F256P30BFE have and What are the Functions of the Pinout Configuration?
The PC28F256P30BFE is typically available in a 48-pin TSOP (Thin Small Outline Package) package. The pinout configuration includes:
- VCC: Power supply pin.
- GND: Ground pin.
- A0-A23: Address lines for selecting memory locations.
- DQ0-DQ7: Data input/output lines for parallel data transfer.
- CE: Chip enable for activating the memory device.
- OE: Output enable for enabling data output.
- WE: Write enable for initiating write operations.
- RP: Ready/Busy signal to indicate memory status.
What are the Pros and Cons of PC28F256P30BFE?
Pros:
- High Capacity: Offers 256 Mb of non-volatile memory storage.
- Fast Access: Operates with a parallel interface for quick data retrieval and storage.
- Reliable: Non-volatile memory retains data without power, ensuring data integrity.
- Industry Standard: Manufactured by Intel Corporation, a reputable semiconductor company.
Cons:
- Parallel Interface: May require more pins and complex interfacing compared to serial flash memory.
- Power Consumption: Consumes more power during operation compared to low-power memory alternatives.
- Cost: Higher capacity flash memory devices like the PC28F256P30BFE may come at a higher price point.
Are There Any Equivalents/Alternatives to PC28F256P30BFE for Recommendation?
- An equivalent to the PC28F256P30BFE is the M29W256GH70N6E by STMicroelectronics.
- Alternative NOR flash memory options include the S29GL256P10TFI01 by Cypress and the AM29LV256ML113REI by AMD.
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