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PC28F00BM29EWHA
MLC Parallel NOR Flash Chip 128MX16
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製造商零件號 # : PC28F00BM29EWHA
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包裝/封裝: BGA-64
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零件狀態 : Active
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製造商: Micron Technology
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產品分類 : Memory
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PC28F00BM29EWHA 數據表
目前的價格方案正在編制中。請聯絡我們的客戶服務團隊獲取最新的價格資訊。感謝您的理解和支援!
詳細說明
Designed for reliability and longevity, the PC28F00BM29EWHA incorporates advanced features like error correction and wear-leveling algorithms, ensuring data integrity and extending its lifespan. Whether it's for smartphones, tablets, or embedded systems, this flash memory chip is a go-to choice for applications requiring top-notch non-volatile storage. Intel's reputation for quality and innovation shines through in the PC28F00BM29EWHA, making it a trusted option for both consumer and industrial devices
主要特徵
- PC28F00BM29EWHA is a high-capacity memory solution
- It has advanced security features and error correction code
- With enhanced bad block management and wear leveling capabilities
- It supports multiple applications with flexible design
- This feature includes advanced reliability and endurance
應用
- Optimal solution for automotive use
- Efficient and high-performing
- Perfect for industrial control
規格
以下是所選零件的基本參數，涉及零件的特性及其所屬類別。
| Product Category ! | NOR Flash | Mounting Style | SMD/SMT |
| Package / Case | BGA-64 | Series | M29EW |
| Memory Size ! | 2 Gbit | Supply Voltage - Min | 2.7 V |
| Supply Voltage - Max | 3.6 V | Active Read Current - Max | 50 mA |
| Interface Type | Parallel | Organization | 256 M x 8/128 M x 16 |
| Data Bus Width | 8 bit/16 bit | Timing Type | Asynchronous |
| Minimum Operating Temperature | - 40 C | Maximum Operating Temperature ! | + 85 C |
| Brand | Micron | Memory Type ! | NOR |
| Product Type ! | NOR Flash | Speed | 100 ns |
| Standard | Common Flash Interface (CFI) | Factory Pack Quantity | 1104 |
| Subcategory | Memory & Data Storage | Type | Boot Block |
Specification Comparison
數據表 PDF
數據表記錄了器件的特性、絕對最大額定值、應用等，這對於作為器件特定應用的整體指南大有裨益。
常見問題解答
What is PC28F00BM29EWHA?
The PC28F00BM29EWHA is a 3 V, 256 Mb/512 Mb/1 Gb multi-level cell (MLC) NAND flash memory device designed by Intel. It is suitable for applications requiring high-density, non-volatile storage, such as solid-state drives, industrial storage, and embedded systems.
How Does PC28F00BM29EWHA Work?
The PC28F00BM29EWHA works by storing data in memory cells using multiple voltage levels to represent different states. It utilizes MLC technology to achieve high-density storage and offers fast program and erase operations. The NAND flash memory device provides reliable data retention and endurance for various storage applications.
How Many Pins does PC28F00BM29EWHA have and What are the Functions of the Pinout Configuration?
The PC28F00BM29EWHA is housed in a 63-ball VFBGA (Very Fine Ball Grid Array) package. The pinout configuration includes:
- Power Supply and Ground Pins: VCC, VCCQ, VSS, and VSSQ.
- Address and Data Bus: Address input pins, data input/output pins, and control signals.
- Ready/Busy: Output signal indicating the status of the memory device.
- Write Protect: Input pin to protect the memory from program or erase operations.
- Other Control Signals: Control signals for program, erase, and other functions.
What are the Pros and Cons of PC28F00BM29EWHA?
Pros:
- High Density: Offers up to 1 Gb of storage capacity for data-intensive applications.
- Fast Program and Erase: Provides quick program and erase operations for efficient data management.
- Reliable: Ensures reliable data retention and endurance for long-term storage.
- Industry Standard Interface: Supports standard NAND flash interfaces for easy integration into various systems.
Cons:
- Complex Interface: Requires careful design considerations for interfacing and managing NAND flash operations.
- Endurance Limitation: MLC NAND flash may have lower endurance compared to single-level cell (SLC) NAND flash.
- Write Endurance: MLC NAND flash may have lower write endurance and higher error rates compared to SLC NAND flash.
Are There Any Equivalents/Alternatives to PC28F00BM29EWHA for Recommendation?
Alternatives to the PC28F00BM29EWHA include the MT29F1G08ABAEAWP from Micron Technology and the K9GAG08U0E from Samsung Electronics.
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