恭喜您提交成功
提交失敗
BLF881,112
Featuring LDMOS technology, the BLF881 RF FET is optimized for high-power applications, boasting a voltage tolerance of 104V and a gain of 21dB
BLF881,112
Featuring LDMOS technology, the BLF881 RF FET is optimized for high-power applications, boasting a voltage tolerance of 104V and a gain of 21dB
-
製造商零件號 # : BLF881,112
-
包裝/封裝: SOT
-
零件狀態 : ACTIVE
-
製造商: Ampleon Usa Inc.
-
產品分類 : RF FETs, MOSFETs
品質保證
品質保證
從我們的供應鍊網路採購的所有零件都經過嚴格的進貨檢驗流程。 這種細緻的檢查可確保客戶收到的零件是正品並符合要求的標準。 此外，我們還保存這些檢查的詳細記錄，以確保整個供應鏈的透明度和可追溯性。
認證
我們已成功獲得各項認證標準，並建立了自己的專業檢測實驗室。 這確保了我們向客戶提供的每件產品都符合最高的品質標準。 我們遵守嚴格的測試協議，以保持我們產品的一致性和準確性。 為了確保我們的產品是原裝正品，我們還與信譽良好的第三方檢測機構合作進行嚴格的品質測試。 我們對品質的承諾延伸到滿足行業、法律、監管和 ISO 9001:2015 的要求。
運輸與付款
運輸與付款
關於運送
我們通常會在幾個工作日內通過可靠的運輸公司（例如 FedEx、SF、UPS 或 DHL）運送訂單。 我們還支持其他運輸方式。 如果您想詢問具體的運輸細節或費用，請隨時與我們聯繫。
關於付款
我們接受多種支付方式，包括VISA、MasterCard、銀聯、西聯、PayPal等渠道。
如果您有特定的付款方式或想詢問費率和其他詳細信息，請隨時與我們聯繫。
電匯
Paypal
信用卡
西聯匯款
速匯金
服務與包裝
服務與包裝
About After Sales Service
All Parts Extended Quality Guarantee
自發貨之日起 90 天內發起申請。
與我們的工作人員確認退貨或換貨。
保持貨物收到時的原始狀態。
最後請注意，退貨或換貨的資格取決於對退貨商品實際狀況的評估。 在完成退貨或換貨流程之前，我們將評估收到的貨物。 如果您對退貨或換貨有任何疑問或需要進一步幫助，請隨時通過以下方式聯絡我們： [email protected]
關於包裝
在包裝方面，我們的產品均精心包裝在防靜電袋中，以提供ESD防靜電保護。 外包裝堅固耐用且閉合牢固。 我們支持各種包裝方法，例如捲帶式、切帶式、管式或託盤式。
例子
捲帶式
剪膠帶
管或託盤
BLF881,112 數據表
目前的價格方案正在編制中。請聯絡我們的客戶服務團隊獲取最新的價格資訊。感謝您的理解和支援!
詳細說明
The BLF881 is a powerful RF Power Field-Effect Transistor designed for ultra high frequency bands. With its N-Channel, Metal-oxide Semiconductor technology, this transistor delivers exceptional performance in a variety of applications. Furthermore, the BLF881 is ROHS COMPLIANT, ensuring it meets strict environmental standards for a more sustainable future. Housed in a sturdy ceramic package, this transistor is built to last and withstand the rigors of daily use. Whether you're in the telecommunications industry or working on advanced electronics projects, the BLF881 is a reliable and efficient choice
主要特徵
- 2-Tone performance at 860 MHz, a drain-source voltage VDS of 50 V and a quiescent drain current IDq = 0.5 A:
- Peak envelope power load power = 140 W
- Power gain = 21 dB
- Drain efficiency = 49 %
- Third order intermodulation distortion = −34 dBc
- DVB performance at 858 MHz, a drain-source voltage VDS of 50 V and a quiescent drain current IDq = 0.5 A:
- Average output power = 33 W
- Power gain = 21 dB
- Drain efficiency = 34 %
- Shoulder distance = −33 dBc (4.3 MHz from center frequency)
- Integrated ESD protection
- Excellent ruggedness
- High power gain
- High efficiency
- Excellent reliability
- Easy power control
- Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)
規格
以下是所選零件的基本參數，涉及零件的特性及其所屬類別。
| Package | Tray | Product Status | Active |
| Technology | LDMOS | Frequency | 860MHz |
| Gain | 21dB | Voltage - Test | 50 V |
| Current - Test | 500 mA | Power - Output | 140W |
| Voltage - Rated | 104 V | Mounting Type | Chassis Mount |
| Package / Case | SOT-467C | Supplier Device Package | SOT467C |
| Base Product Number | BLF881 |
數據表 PDF
數據表記錄了器件的特性、絕對最大額定值、應用等，這對於作為器件特定應用的整體指南大有裨益。
常見問題解答
What is BLF881,112?
The BLF881,112 is a high power LDMOS transistor designed for use in broadcast and industrial applications. It is specifically optimized for use in FM broadcast transmitters and industrial RF heating systems.
How Does BLF881,112 Work?
The BLF881,112 operates by amplifying RF signals with high power and efficiency. It is designed to withstand the high voltage and power levels typical in broadcast and industrial RF applications. The transistor helps to deliver high-quality and reliable RF signals for broadcasting and industrial heating processes.
How Many Pins does BLF881,112 have and What are the Functions of the Pinout Configuration?
The BLF881,112 is typically housed in a package that features several pins for connection to external circuitry and thermal management. The pinout configuration may include power supply pins, RF input and output pins, control and biasing pins, and often thermal sensing pins for protection and performance monitoring.
What are the Pros and Cons of BLF881,112?
Pros:
- High Power Handling: Capable of handling high RF power levels, suitable for broadcast and industrial RF applications.
- Reliability: Designed for long-term and high-stress operation for broadcast transmitters and RF heating systems.
- Efficiency: Provides efficient RF power amplification for effective signal transmission.
Cons:
- Specialized Application: Tailored for specific applications in broadcast and industrial RF, may not be suitable for general-purpose RF amplification.
- External Circuitry: May require external matching networks and filtering for optimal performance in different operating conditions.
Are There Any Equivalents/Alternatives to BLF881,112 for Recommendation?
Similar high power LDMOS transistors include the BLF578XR, BLF178XR, and BLF888A from NXP Semiconductors, which may offer comparable performance for specific broadcast and industrial RF applications.
推薦零件
-
![BLP10H610AZ]()
4,469 有存貨
貨物週期: 3~7 天
最小訂購量為 1
-
![BLF888]()
5,395 有存貨
貨物週期: 3~7 天
最小訂購量為 1
-
![BLF8G27LS-140V]()
4,573 有存貨
貨物週期: 3~7 天
最小訂購量為 1
-
![BLF8G20LS-200V]()
6,577 有存貨
貨物週期: 3~7 天
最小訂購量為 1
-
![BLT50,115]()
5,288 有存貨
貨物週期: 3~7 天
最小訂購量為 1
-
![BLF6G22-180PN]()
Transistor Designed for RF Transmission Systems, N-Channel, 65V, 5-Pin SOT-539A Configuration
製造商: NXP 包裝/箱: SOT502B
5,153 有存貨
貨物週期: 3~7 天
最小訂購量為 1
-
![BLF642,112]()
4,373 有存貨
貨物週期: 3~7 天
最小訂購量為 1
-
![BLF861A]()
7,747 有存貨
貨物週期: 3~7 天
最小訂購量為 1
-
![BLF7G10LS-250]()
3,571 有存貨
貨物週期: 3~7 天
最小訂購量為 1
-
![BLF6G22LS-130]()
5,849 有存貨
貨物週期: 3~7 天
最小訂購量為 1
-
![BLA1011-300]()
BLA1011-300 - Transistor for Avionics Applications with 300W Output
製造商: NXP 包裝/箱: SOT-957A
4,927 有存貨
貨物週期: 3~7 天
最小訂購量為 1
-
![BLL1214-35]()
3,092 有存貨
貨物週期: 3~7 天
最小訂購量為 1
-
![BLC9G22XS-400AVT]()
4,136 有存貨
貨物週期: 3~7 天
最小訂購量為 1
