TO-3PL 相關產品

零件號 描述 製造商 生命週期狀態 貨物週期 有存貨 操作
2SC3714 NPN Silicon Power Bipolar Transistor with a Collector Current of 20 Amperes and a Breakdown Voltage of 400 Volts Shindengen Electronic Manufacturing Co Ltd 3~7 Days 7,841
2SD1314 Transistor 15 A, 450 V, NPN, Silicon, Power Transistor Toshiba America Electronic Components 3~7 Days 5,413
1MBH75D-060S TO-3PL Packaged Insulated Gate Bipolar Transistor capable of handling 83A Collector Current and 600V Breakdown Voltage, N-Channel, 3 Pins Fuji Electric Co Ltd 3~7 Days 7,867
1MBH50D-060S Transistor IGBT with 600V / 50A Molded Package Fujitsu Limited 3~7 Days 5,901
2SK447 24 ohm Si power MOSFET 15A 250V TOSHIBA 3~7 Days 3,448
TTA0002 60v, 18a, 3-pin, bip, 2-21f1a TOSHIBA 3~7 Days 4,113
IXTK110N20L2 A TO-264-3 packaged MOSFET capable of handling currents up to 110A and voltages up to 200V, providing a power output of 960W IXYS 3~7 Days 4,344
FGL40N120AN FGL40N120AN, an Insulated Gate Bipolar Transistor Onsemi 3~7 Days 5,241
NTE2328 High-Voltage NTE2328 Transistor with 15A Current Capacity NTE ACTIVE 3~7 Days 6,097
IXTK80N25 Power Field-Effect Transistor, 80A I(D), 250V, 0.033ohm IXYS 3~7 Days 7,735
GT50J322 IGBT Transistors 3PL IGBT TRC2 ACTIVE DISCON TOSHIBA 3~7 Days 7,676
2SK3131 MOSFET 3PL PLN ACTIVE PHASE-OUT TOSHIBA 3~7 Days 4,533
2SD2276 40 volt breakdown voltage Panasonic Electronic Components 3~7 Days 3,163
GT50J101 TO-3PL Encased N-Channel IGBT Transistor, 50 Amperes, 600 Volts Toshiba 3~7 Days 6,901
GT40T101 IGBT Transistor, N-Channel, TO-264AA Toshiba America Electronic Components 3~7 Days 7,388
2SK3132 N-Channel Power MOSFET TOSHIBA 3~7 Days 6,343
2SK1544 Obsolete MOSFET 3PL PLN TOSHIBA 3~7 Days 4,790
2SK1382 Si N-channel MOSFET with 60A current handling capacity TOSHIBA 3~7 Days 5,252
KTC5200 KTC5200 is a low voltage, high gain NPN transistor used for amplification and switching applications. KEC 3~7 Days 6,435
1MBH60-090 N-channel Insulated Gate Bipolar Transistor (IGBT) with a maximum collector current of 60A and a collector-emitter breakdown voltage of 900V FUJITSU 3~7 Days 3,910
2SA1942 2SA1942 - PNP Silicon Power Transistor, 12 Amps, 160 Volts, General Purpose TOSHIBA 3~7 Days 6,593
2SC3546 2SC3546 is a high-voltage, high-speed switching transistor used in electronic circuits. TOSHIBA 3~7 Days 6,328
2SC5859 NPN silicon transistor designed for general purpose power applications TOSHIBA 3~7 Days 4,010
1MBH60-100 Insulated Gate Bipolar Transistor, 60A I(C), 1000V V(BR)CES, N-Channel, TO-3PL, 3 PIN FUJITSU 3~7 Days 7,099
2SK1522 50A, 500V, 0.11ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3PL, 3 PIN HITACHI 3~7 Days 7,756
2SD1975 Transistor PANASONIC 3~7 Days 7,515
2SA1943 Robust and versatile PNP transistor for a wide range of use Onsemi 3~7 Days 5,146
NDTL03N150CG Trans MOSFET N-CH 1.5KV 2.5A 3-Pin(3+Tab) TO-3P Tube Onsemi OBSOLETE 3~7 Days 8,412
GT60N321 Lead-free and RoHS compliant for environmental sustainabilit Toshiba 3~7 Days 6,431
GT50J121 Robust and reliable solution for industrial power control systems Toshiba 3~7 Days 5,997
2SD1525 Ideal for power amplifier circuits requiring high current and low voltage drops Sptech 3~7 Days 2,429
2SC5570 High-voltage bipolar transistor for high-power applications, phase-out since 2008 and obsolete since 2010 Toshiba 3~7 Days 5,662
2SC3281 Reliable device for power electronic desig Sptech 3~7 Days 2,629
2SB1429 High-quality TO-L Bipolar Transistors for precise control applications Sptech 3~7 Days 2,000
GT25Q102 Exclusively for OEMs and CMs Toshiba OBSOLETE 3~7 Days 8,827