TO-3PL 相關產品
零件號 | 描述 | 製造商 | 生命週期狀態 | 貨物週期 | 有存貨 | 操作 |
---|---|---|---|---|---|---|
2SC3714 | NPN Silicon Power Bipolar Transistor with a Collector Current of 20 Amperes and a Breakdown Voltage of 400 Volts | Shindengen Electronic Manufacturing Co Ltd | 3~7 Days | 7,841 | ||
2SD1314 | Transistor 15 A, 450 V, NPN, Silicon, Power Transistor | Toshiba America Electronic Components | 3~7 Days | 5,413 | ||
1MBH75D-060S | TO-3PL Packaged Insulated Gate Bipolar Transistor capable of handling 83A Collector Current and 600V Breakdown Voltage, N-Channel, 3 Pins | Fuji Electric Co Ltd | 3~7 Days | 7,867 | ||
1MBH50D-060S | Transistor IGBT with 600V / 50A Molded Package | Fujitsu Limited | 3~7 Days | 5,901 | ||
2SK447 | 24 ohm Si power MOSFET 15A 250V | TOSHIBA | 3~7 Days | 3,448 | ||
TTA0002 | 60v, 18a, 3-pin, bip, 2-21f1a | TOSHIBA | 3~7 Days | 4,113 | ||
IXTK110N20L2 | A TO-264-3 packaged MOSFET capable of handling currents up to 110A and voltages up to 200V, providing a power output of 960W | IXYS | 3~7 Days | 4,344 | ||
FGL40N120AN | FGL40N120AN, an Insulated Gate Bipolar Transistor | Onsemi | 3~7 Days | 5,241 | ||
NTE2328 | High-Voltage NTE2328 Transistor with 15A Current Capacity | NTE | ACTIVE | 3~7 Days | 6,097 | |
IXTK80N25 | Power Field-Effect Transistor, 80A I(D), 250V, 0.033ohm | IXYS | 3~7 Days | 7,735 | ||
GT50J322 | IGBT Transistors 3PL IGBT TRC2 ACTIVE DISCON | TOSHIBA | 3~7 Days | 7,676 | ||
2SK3131 | MOSFET 3PL PLN ACTIVE PHASE-OUT | TOSHIBA | 3~7 Days | 4,533 | ||
2SD2276 | 40 volt breakdown voltage | Panasonic Electronic Components | 3~7 Days | 3,163 | ||
GT50J101 | TO-3PL Encased N-Channel IGBT Transistor, 50 Amperes, 600 Volts | Toshiba | 3~7 Days | 6,901 | ||
GT40T101 | IGBT Transistor, N-Channel, TO-264AA | Toshiba America Electronic Components | 3~7 Days | 7,388 | ||
2SK3132 | N-Channel Power MOSFET | TOSHIBA | 3~7 Days | 6,343 | ||
2SK1544 | Obsolete MOSFET 3PL PLN | TOSHIBA | 3~7 Days | 4,790 | ||
2SK1382 | Si N-channel MOSFET with 60A current handling capacity | TOSHIBA | 3~7 Days | 5,252 | ||
KTC5200 | KTC5200 is a low voltage, high gain NPN transistor used for amplification and switching applications. | KEC | 3~7 Days | 6,435 | ||
1MBH60-090 | N-channel Insulated Gate Bipolar Transistor (IGBT) with a maximum collector current of 60A and a collector-emitter breakdown voltage of 900V | FUJITSU | 3~7 Days | 3,910 | ||
2SA1942 | 2SA1942 - PNP Silicon Power Transistor, 12 Amps, 160 Volts, General Purpose | TOSHIBA | 3~7 Days | 6,593 | ||
2SC3546 | 2SC3546 is a high-voltage, high-speed switching transistor used in electronic circuits. | TOSHIBA | 3~7 Days | 6,328 | ||
2SC5859 | NPN silicon transistor designed for general purpose power applications | TOSHIBA | 3~7 Days | 4,010 | ||
1MBH60-100 | Insulated Gate Bipolar Transistor, 60A I(C), 1000V V(BR)CES, N-Channel, TO-3PL, 3 PIN | FUJITSU | 3~7 Days | 7,099 | ||
2SK1522 | 50A, 500V, 0.11ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3PL, 3 PIN | HITACHI | 3~7 Days | 7,756 | ||
2SD1975 | Transistor | PANASONIC | 3~7 Days | 7,515 | ||
2SA1943 | Robust and versatile PNP transistor for a wide range of use | Onsemi | 3~7 Days | 5,146 | ||
NDTL03N150CG | Trans MOSFET N-CH 1.5KV 2.5A 3-Pin(3+Tab) TO-3P Tube | Onsemi | OBSOLETE | 3~7 Days | 8,412 | |
GT60N321 | Lead-free and RoHS compliant for environmental sustainabilit | Toshiba | 3~7 Days | 6,431 | ||
GT50J121 | Robust and reliable solution for industrial power control systems | Toshiba | 3~7 Days | 5,997 | ||
2SD1525 | Ideal for power amplifier circuits requiring high current and low voltage drops | Sptech | 3~7 Days | 2,429 | ||
2SC5570 | High-voltage bipolar transistor for high-power applications, phase-out since 2008 and obsolete since 2010 | Toshiba | 3~7 Days | 5,662 | ||
2SC3281 | Reliable device for power electronic desig | Sptech | 3~7 Days | 2,629 | ||
2SB1429 | High-quality TO-L Bipolar Transistors for precise control applications | Sptech | 3~7 Days | 2,000 | ||
GT25Q102 | Exclusively for OEMs and CMs | Toshiba | OBSOLETE | 3~7 Days | 8,827 |
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