產品對比: K4T1G164QF-BCF7 vs K4T1G164QQ-HCE7 vs K4T1G164QD-ZCE6
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零件號
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Manufacturer | SAMSUNG | SAMSUNG | SAMSUNG |
Package | FBGA-84 | FBGA-84 | FBGA84 |
Description | High density CMOS technology for improved performance | High-speed memory | DDR DRAM with 64MX16 capacity and 0.45ns speed, PBGA84 packaging |
Stock | 3335 | 3729 | 4597 |
Rohs Code | Yes | Yes | Yes |
Part Life Cycle Code | Obsolete | Obsolete | Obsolete |
Reach Compliance Code | compliant | ||
ECCN Code | EAR99 | EAR99 | EAR99 |
HTS Code | 8542.32.00.32 | 8542.32.00.32 | 8542.32.00.32 |
Access Time-Max | 0.4 ns | 0.4 ns | 0.45 ns |
Clock Frequency-Max (fCLK) | 400 MHz | 400 MHz | 333 MHz |
I/O Type | COMMON | COMMON | COMMON |
Interleaved Burst Length | 4,8 | 4,8 | 4,8 |
JESD-30 Code | R-PBGA-B84 | R-PBGA-B84 | R-PBGA-B84 |
Memory Density | 1073741824 bit | 1073741824 bit | 1073741824 bit |
Memory IC Type | DDR2 DRAM | DDR2 DRAM | DDR2 DRAM |
Memory Width | 16 | 16 | 16 |
Moisture Sensitivity Level | 3 | 3 | 3 |
Number of Terminals | 84 | 84 | 84 |
Number of Words | 67108864 words | 67108864 words | 67108864 words |
Number of Words Code | 64000000 | 64000000 | 64000000 |
Organization | 64MX16 | 64MX16 | 64MX16 |
Output Characteristics | 3-STATE | 3-STATE | 3-STATE |
Package Body Material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
Package Code | FBGA | FBGA | FBGA |
Package Equivalence Code | BGA84,9X15,32 | BGA84,9X15,32 | BGA84,9X15,32 |
Package Shape | RECTANGULAR | RECTANGULAR | RECTANGULAR |
Package Style | GRID ARRAY, FINE PITCH | GRID ARRAY, FINE PITCH | GRID ARRAY, FINE PITCH |
Peak Reflow Temperature (Cel) | 260 | 260 | 260 |
Power Supplies | 1.8 V | 1.8 V | 1.8 V |
Qualification Status | Not Qualified | Not Qualified | Not Qualified |
Refresh Cycles | 8192 | 8192 | 8192 |
Sequential Burst Length | 4,8 | 4,8 | 4,8 |
Standby Current-Max | 0.01 A | 0.015 A | 0.015 A |
Supply Current-Max | 0.18 mA | 0.265 mA | 0.255 mA |
Supply Voltage-Nom (Vsup) | 1.8 V | 1.8 V | 1.8 V |
Surface Mount | YES | YES | YES |
Technology | CMOS | CMOS | CMOS |
Terminal Form | BALL | BALL | BALL |
Terminal Pitch | 0.8 mm | 0.8 mm | 0.8 mm |
Terminal Position | BOTTOM | BOTTOM | BOTTOM |
JESD-609 Code | e1 | ||
Terminal Finish | TIN SILVER COPPER | ||
Pbfree Code | Yes |
零件號
關鍵字: K4T1G
零件號 "K4T1G" 回傅 20 個結果; 所有結果都匹配且頭部為 "K4T1G".
零件號 | 描述 | 製造商 | 包裝/箱 | 生命週期狀態 | 貨物週期 | 有存貨 | 操作 |
---|---|---|---|---|---|---|---|
K4T1G164QQ-HCE6 |
Ultra-fast data transmission for seamless device operation |
SAMSUNG | FBGA-84 | Discontinued | 3~7 天 | 3,956.00 | |
K4T1G084QF-BCF7 |
Advanced 128MX8 configuration |
SAMSUNG | BGA-60 | 3~7 天 | 4,206.00 | ||
K4T1G164QQ-HCF7 |
CMOS PBGA84 DDR memory module with 64MX16 configuration |
SAMSUNG | FBGA-84 | 3~7 天 | 4,438.00 | ||
K4T1G084QE-HCE6 |
With a compact FBGA-60 form factor, this memory module is ideal for compact devices requiring high-performance memory |
SAMSUNG | BGA | 3~7 天 | 3,529.00 | ||
K4T1G164QF-BCE6 |
0.45 nanoseconds |
SAMSUNG | BGA-84 | 3~7 天 | 4,887.00 | ||
K4T1G084QQ-HCF7 |
Experience exceptional memory solutions with the reliable and fast KQ-HC |
SAMSUNG | BGA-60 | 3~7 天 | 7,382.00 | ||
K4T1G084QQ-HCE6 |
DDR memory module |
SAMSUNG | FBGA-60 | 3~7 天 | 5,181.00 | ||
K4T1G084QE-HCF7 |
CMOS technology |
SAMSUNG | 60FBGA | 3~7 天 | 3,973.00 | ||
K4T1G164QE-HCF8 |
This product is a DDR DRAM with a capacity of 64MX16 and a speed of 0.35ns." |
SAMSUNG | FBGA84 | 3~7 天 | 6,271.00 | ||
K4T1G164QE-HCE6 |
Advanced PBGA84 packaging for durability and stability |
SAMSUNG | BGA-84 | 3~7 天 | 4,906.00 | ||
K4T1G084QA-ZCE6 |
Ultra-fast DDR DRAM with Pb-free construction and 68 ball grid array package |
SAMSUNG | BGA | 3~7 天 | 5,907.00 | ||
K4T1G084QF-BCE6 |
Ddr Dram, 128MX8, 0.45NS, Cmos, PBGA60 |
SAMSUNG | FBGA-60 | 3~7 天 | 4,099.00 | ||
K4T1G164QF-BCE7 |
Cost-effective 1Gb DDR2 RAM |
Samsung | FPBGA84 | 3~7 天 | 5,486.00 | ||
K4T1G084QJ-BCE7 |
DRAM Chip DDR2 SDRAM |
Samsung Electronics | FBGA | OBSOLETE | 3~7 天 | 7,207.00 | |
K4T1G164QG-BIE6000 |
Fast and efficient 1GB DDR2 RAM module for optimized system performance |
Samsung Electronics | FBGA | 3~7 天 | 2,347.00 | ||
K4T1G164QJ-BIE7000 |
Reliable and scalable memory solution for mission-critical systems and high-end computing |
Samsung Electronics | FBGA | 3~7 天 | 5,989.00 | ||
K4T1G164QF-BCE7T00 |
64Mx16 memory chip for massive storage capacity |
Samsung Electronics | FBGA | 3~7 天 | 6,668.00 | ||
K4T1G164QE-HCE70T00 |
Efficient DDR2 SDRAM for system integration |
Samsung Electronics | FBGA | 3~7 天 | 7,143.00 | ||
K4T1G084QG-BCF7000 |
Cutting-edge SDRAM technology for increased data processing speed |
Samsung Electronics | FBGA | 3~7 天 | 6,906.00 | ||
K4T1G164QA-ZCD5000 |
Compact and lightweight FBGA package reduces board space requirements for increased density |
Samsung Electronics | FBGA | 3~7 天 | 2,578.00 |