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產品對比: K4T1G084QE-HCF7 vs K4T1G084QQ-HCF7 vs K4T1G084QF-BCF7
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零件號
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| Manufacturer | SAMSUNG | SAMSUNG | SAMSUNG |
| Package | 60FBGA | BGA-60 | BGA-60 |
| Description | CMOS technology | Experience exceptional memory solutions with the reliable and fast KQ-HC | Advanced 128MX8 configuration |
| Stock | 3973 | 7382 | 4206 |
| Rohs Code | Yes | Yes | Yes |
| Part Life Cycle Code | Obsolete | Obsolete | Obsolete |
| ECCN Code | EAR99 | EAR99 | EAR99 |
| HTS Code | 8542.32.00.32 | 8542.32.00.32 | 8542.32.00.32 |
| Access Time-Max | 0.4 ns | 0.4 ns | 0.4 ns |
| Clock Frequency-Max (fCLK) | 400 MHz | 400 MHz | 400 MHz |
| I/O Type | COMMON | COMMON | COMMON |
| Interleaved Burst Length | 4,8 | 4,8 | 4,8 |
| JESD-30 Code | R-PBGA-B60 | R-PBGA-B60 | R-PBGA-B60 |
| Memory Density | 1073741824 bit | 1073741824 bit | 1073741824 bit |
| Memory IC Type | DDR2 DRAM | DDR2 DRAM | DDR2 DRAM |
| Memory Width | 8 | 8 | 8 |
| Moisture Sensitivity Level | 3 | 3 | 3 |
| Number of Terminals | 60 | 60 | 60 |
| Number of Words | 134217728 words | 134217728 words | 134217728 words |
| Number of Words Code | 128000000 | 128000000 | 128000000 |
| Organization | 128MX8 | 128MX8 | 128MX8 |
| Output Characteristics | 3-STATE | 3-STATE | 3-STATE |
| Package Body Material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package Code | TFBGA | FBGA | FBGA |
| Package Equivalence Code | BGA60,9X11,32 | BGA60,9X11,32 | BGA60,9X11,32 |
| Package Shape | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package Style | GRID ARRAY, THIN PROFILE, FINE PITCH | GRID ARRAY, FINE PITCH | GRID ARRAY, FINE PITCH |
| Peak Reflow Temperature (Cel) | 260 | 260 | 260 |
| Power Supplies | 1.8 V | 1.8 V | 1.8 V |
| Qualification Status | Not Qualified | Not Qualified | Not Qualified |
| Refresh Cycles | 8192 | 8192 | 8192 |
| Sequential Burst Length | 4,8 | 4,8 | 4,8 |
| Supply Current-Max | 0.17 mA | 0.25 mA | 0.16 mA |
| Supply Voltage-Nom (Vsup) | 1.8 V | 1.8 V | 1.8 V |
| Surface Mount | YES | YES | YES |
| Technology | CMOS | CMOS | CMOS |
| Terminal Form | BALL | BALL | BALL |
| Terminal Pitch | 0.8 mm | 0.8 mm | 0.8 mm |
| Terminal Position | BOTTOM | BOTTOM | BOTTOM |
| Pbfree Code | Yes | ||
| Access Mode | MULTI BANK PAGE BURST | ||
| Additional Feature | AUTO/SELF REFRESH | ||
| Length | 9.5 mm | ||
| Number of Functions | 1 | ||
| Number of Ports | 1 | ||
| Operating Mode | SYNCHRONOUS | ||
| Operating Temperature-Max | 85 °C | ||
| Seated Height-Max | 1.2 mm | ||
| Self Refresh | YES | ||
| Supply Voltage-Max (Vsup) | 1.9 V | ||
| Supply Voltage-Min (Vsup) | 1.7 V | ||
| Temperature Grade | OTHER | ||
| Width | 7.5 mm | ||
| JESD-609 Code | e1 | ||
| Terminal Finish | TIN SILVER COPPER |
零件號
關鍵字: K4T1G
零件號 "K4T1G" 回傅 20 個結果; 所有結果都匹配且頭部為 "K4T1G".
| 零件號 | 描述 | 製造商 | 包裝/箱 | 生命週期狀態 | 貨物週期 | 有存貨 | 操作 |
|---|---|---|---|---|---|---|---|
| K4T1G164QQ-HCE6 |
Ultra-fast data transmission for seamless device operation |
SAMSUNG | FBGA-84 | Discontinued | 3~7 天 | 3,956.00 | |
| K4T1G164QF-BCF7 |
High density CMOS technology for improved performance |
SAMSUNG | FBGA-84 | 3~7 天 | 3,335.00 | ||
| K4T1G164QQ-HCF7 |
CMOS PBGA84 DDR memory module with 64MX16 configuration |
SAMSUNG | FBGA-84 | 3~7 天 | 4,438.00 | ||
| K4T1G084QE-HCE6 |
With a compact FBGA-60 form factor, this memory module is ideal for compact devices requiring high-performance memory |
SAMSUNG | BGA | 3~7 天 | 3,529.00 | ||
| K4T1G164QF-BCE6 |
0.45 nanoseconds |
SAMSUNG | BGA-84 | 3~7 天 | 4,887.00 | ||
| K4T1G164QD-ZCE6 |
DDR DRAM with 64MX16 capacity and 0.45ns speed, PBGA84 packaging |
SAMSUNG | FBGA84 | 3~7 天 | 4,597.00 | ||
| K4T1G084QQ-HCE6 |
DDR memory module |
SAMSUNG | FBGA-60 | 3~7 天 | 5,181.00 | ||
| K4T1G164QQ-HCE7 |
High-speed memory |
SAMSUNG | FBGA-84 | 3~7 天 | 3,729.00 | ||
| K4T1G164QE-HCF8 |
This product is a DDR DRAM with a capacity of 64MX16 and a speed of 0.35ns." |
SAMSUNG | FBGA84 | 3~7 天 | 6,271.00 | ||
| K4T1G164QE-HCE6 |
Advanced PBGA84 packaging for durability and stability |
SAMSUNG | BGA-84 | 3~7 天 | 4,906.00 | ||
| K4T1G084QA-ZCE6 |
Ultra-fast DDR DRAM with Pb-free construction and 68 ball grid array package |
SAMSUNG | BGA | 3~7 天 | 5,907.00 | ||
| K4T1G084QF-BCE6 |
Ddr Dram, 128MX8, 0.45NS, Cmos, PBGA60 |
SAMSUNG | FBGA-60 | 3~7 天 | 4,099.00 | ||
| K4T1G164QF-BCE7 |
Cost-effective 1Gb DDR2 RAM |
Samsung | FPBGA84 | 3~7 天 | 5,486.00 | ||
| K4T1G084QJ-BCE7 |
DRAM Chip DDR2 SDRAM |
Samsung Electronics | FBGA | OBSOLETE | 3~7 天 | 7,207.00 | |
| K4T1G164QG-BIE6000 |
Fast and efficient 1GB DDR2 RAM module for optimized system performance |
Samsung Electronics | FBGA | 3~7 天 | 2,347.00 | ||
| K4T1G164QJ-BIE7000 |
Reliable and scalable memory solution for mission-critical systems and high-end computing |
Samsung Electronics | FBGA | 3~7 天 | 5,989.00 | ||
| K4T1G164QF-BCE7T00 |
64Mx16 memory chip for massive storage capacity |
Samsung Electronics | FBGA | 3~7 天 | 6,668.00 | ||
| K4T1G164QE-HCE70T00 |
Efficient DDR2 SDRAM for system integration |
Samsung Electronics | FBGA | 3~7 天 | 7,143.00 | ||
| K4T1G084QG-BCF7000 |
Cutting-edge SDRAM technology for increased data processing speed |
Samsung Electronics | FBGA | 3~7 天 | 6,906.00 | ||
| K4T1G164QA-ZCD5000 |
Compact and lightweight FBGA package reduces board space requirements for increased density |
Samsung Electronics | FBGA | 3~7 天 | 2,578.00 |