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產品對比: H5TQ4G63MFR-PBC vs H5TQ4G63MFR-H9C vs H5TQ4G63AFR-RDC
隱藏相同的屬性
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零件號
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| Manufacturer | Sk Hynix Inc | SKHYNIX | Sk Hynix Inc |
| Package | FBGA-96 | FBGA-96 | FBGA-96 |
| Description | DDR DRAM, 256MX16, 0.225ns, CMOS | The H5TQ4G63MFR-H9C is a high-performance FBGA-96 memory module suitable for a wide range of computing and networking applications | CMOS technology |
| Stock | 7096 | 6603 | 6220 |
| Rohs Code | Yes | Yes | Yes |
| Part Life Cycle Code | Obsolete | Obsolete | Obsolete |
| Part Package Code | BGA | BGA | BGA |
| Pin Count | 96 | 96 | 96 |
| Reach Compliance Code | compliant | compliant | |
| ECCN Code | EAR99 | EAR99 | EAR99 |
| HTS Code | 8542.32.00.36 | 8542.32.00.36 | 8542.32.00.36 |
| Access Mode | MULTI BANK PAGE BURST | MULTI BANK PAGE BURST | MULTI BANK PAGE BURST |
| Access Time-Max | 0.225 ns | 0.255 ns | 0.195 ns |
| Additional Feature | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH |
| Clock Frequency-Max (fCLK) | 800 MHz | 667 MHz | 933 MHz |
| I/O Type | COMMON | COMMON | COMMON |
| Interleaved Burst Length | 4,8 | 4,8 | 4,8 |
| JESD-30 Code | R-PBGA-B96 | R-PBGA-B96 | R-PBGA-B96 |
| Length | 13 mm | 13 mm | 13 mm |
| Memory Density | 4294967296 bit | 4294967296 bit | 4294967296 bit |
| Memory IC Type | DDR3 DRAM | DDR3 DRAM | DDR3 DRAM |
| Memory Width | 16 | 16 | 16 |
| Number of Functions | 1 | 1 | 1 |
| Number of Ports | 1 | 1 | 1 |
| Number of Terminals | 96 | 96 | 96 |
| Number of Words | 268435456 words | 268435456 words | 268435456 words |
| Number of Words Code | 256000000 | 256000000 | 256000000 |
| Operating Mode | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS |
| Operating Temperature-Max | 85 °C | 85 °C | 85 °C |
| Organization | 256MX16 | 256MX16 | 256MX16 |
| Output Characteristics | 3-STATE | 3-STATE | 3-STATE |
| Package Body Material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package Code | TFBGA | TFBGA | TFBGA |
| Package Equivalence Code | BGA96,9X16,32 | BGA96,9X16,32 | BGA96,9X16,32 |
| Package Shape | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package Style | GRID ARRAY, THIN PROFILE, FINE PITCH | GRID ARRAY, THIN PROFILE, FINE PITCH | GRID ARRAY, THIN PROFILE, FINE PITCH |
| Peak Reflow Temperature (Cel) | 260 | 260 | NOT SPECIFIED |
| Power Supplies | 1.5 V | 1.5 V | 1.5 V |
| Qualification Status | Not Qualified | Not Qualified | Not Qualified |
| Refresh Cycles | 8192 | 8192 | 8192 |
| Seated Height-Max | 1.2 mm | 1.2 mm | 1.2 mm |
| Self Refresh | YES | YES | YES |
| Sequential Burst Length | 4,8 | 4,8 | 4,8 |
| Standby Current-Max | 0.02 A | 0.02 A | 0.017 A |
| Supply Current-Max | 0.29 mA | 0.285 mA | 0.225 mA |
| Supply Voltage-Max (Vsup) | 1.575 V | 1.575 V | 1.575 V |
| Supply Voltage-Min (Vsup) | 1.425 V | 1.425 V | 1.425 V |
| Supply Voltage-Nom (Vsup) | 1.5 V | 1.5 V | 1.5 V |
| Surface Mount | YES | YES | YES |
| Technology | CMOS | CMOS | CMOS |
| Temperature Grade | OTHER | OTHER | OTHER |
| Terminal Form | BALL | BALL | BALL |
| Terminal Pitch | 0.8 mm | 0.8 mm | 0.8 mm |
| Terminal Position | BOTTOM | BOTTOM | BOTTOM |
| Time@Peak Reflow Temperature-Max (s) | 20 | 20 | NOT SPECIFIED |
| Width | 9.4 mm | 9.4 mm | 9 mm |
| JESD-609 Code | e1 | e1 | |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) | Tin/Silver/Copper (Sn/Ag/Cu) |
零件號
關鍵字: H5TQ4
零件號 "H5TQ4" 回傅 20 個結果; 所有結果都匹配且頭部為 "H5TQ4".
| 零件號 | 描述 | 製造商 | 包裝/箱 | 生命週期狀態 | 貨物週期 | 有存貨 | 操作 |
|---|---|---|---|---|---|---|---|
| H5TQ4G63AFR-PBC |
Packaged in a 96-ball FBGA with PBGA design, utilizing CMOS technology for efficient performance |
Hynix | BGA96 | 3~7 天 | 6,237.00 | ||
| H5TQ4G63EFR-TEC |
H5TQ4G63EFR-TEC chip is a high-speed |
SKHYNIX | BGA | 3~7 天 | 4,907.00 | ||
| H5TQ4G63CFR-RDC |
Reliable distributor |
Sk Hynix | FBGA | OBSOLETE | 3~7 天 | 7,444.00 | |
| H5TQ4G83AFR-PBC |
Halogen Free and RoHS Compliant DDR DRAM |
SKHYNIX | FBGA78 | 3~7 天 | 4,219.00 | ||
| H5TQ4G63AFR-TEC |
Technology: CMOS |
SKHYNIX | BGA | 3~7 天 | 5,692.00 | ||
| H5TQ4G83MFR-H9C |
12M X 8 Double Data Rate Dynamic Random Access Memory PBGA78 |
SKHYNIX | FBGA78 | 3~7 天 | 7,258.00 | ||
| H5TQ4G83CFR-RDC |
DDR memory module |
SKHYNIX | BGA | 3~7 天 | 3,044.00 | ||
| H5TQ4G43MFR |
H5TQ4G43MFR is a 4Gb LPDDR3 memory chip by SK Hynix, commonly used in mobile devices. |
SKHYNIX | FBGA | 3~7 天 | 3,024.00 | ||
| H5TQ4G63CFR-RDI |
Compact PBGA package ideal for space-constrained design |
Sk Hynix Inc | 3~7 天 | 7,048.00 | |||
| H5TQ4G63AFR-PBI |
High-density DDR DRAM module for efficient data transfe |
Sk Hynix Inc | 3~7 天 | 2,194.00 | |||
| H5TQ4G43MFR-H9C |
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SKHYNIX | FBGA | 3~7 天 | 2,348.00 | ||
| H5TQ4G63AFP |
|
SKHYNIX | 3~7 天 | 855.00 | |||
| H5TQ4G63AFR-11C |
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SKHYNIX | FBGA | 3~7 天 | 40.00 | ||
| H5TQ4G63AFR-H9C |
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SKHYNIX | BGA | 3~7 天 | 3,200.00 | ||
| H5TQ4G63AFR-H9I |
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SKHYNIX | BGA | 3~7 天 | 1.00 | ||
| H5TQ4G63AFR-RDC |
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SKHYNIX | FBGA-96 | 3~7 天 | 5,000.00 | ||
| H5TQ4G63CFR-PBC |
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SKHYNIX | FBGA96 | 3~7 天 | 1.00 | ||
| H5TQ4G63CFR RDI |
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SKHYNIX | FBGA-96 | 3~7 天 | 6.00 | ||
| H5TQ4G63AFR-PBCR |
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SKHYNIX | BGA | 3~7 天 | 156.00 | ||
| H5TQ4G63AFR-PB |
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SKHYNIX | BGA | 3~7 天 | 43.00 |