H5TQ4G63AFR-PBI
High-density DDR DRAM module for efficient data transfeH5TQ4G63AFR-PBI
High-density DDR DRAM module for efficient data transfe
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製造商零件號 # : H5TQ4G63AFR-PBI
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製造商: Sk Hynix Inc
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產品分類 : Memory
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H5TQ4G63AFR-PBI 數據表
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目前的價格方案正在編制中。請聯絡我們的客戶服務團隊獲取最新的價格資訊。感謝您的理解和支援!
詳細說明
Introduction to H5TQ4G63AFR-PBI
The H5TQ4G63AFR-PBI is a high-speed and low-power mobile DRAM (mDRAM) IC manufactured by SK Hynix. This IC is designed to meet the requirements of mobile and portable devices, offering efficient memory performance with low power consumption. With a capacity of 4Gb (512M x 8), the H5TQ4G63AFR-PBI provides fast data access and transfer rates, making it suitable for use in smartphones, tablets, and other handheld electronic devices.
Specs and Features
- Memory Type: Mobile DRAM (mDRAM) with high-speed and low-power operation.
- Organization: 512M x 8 configuration for efficient data handling in mobile applications.
- Operating Speed: High-speed operation for seamless multitasking and data-intensive tasks.
- Low Power Consumption: Designed for energy-efficient performance to prolong battery life in mobile devices.
- Package Type: Available in compact and thin BGA (Ball Grid Array) package for space-constrained designs.
- Temperature Range: Supports extended temperature range for reliable performance in various operating environments.
Application and Uses
The H5TQ4G63AFR-PBI is ideal for memory-intensive applications in mobile devices:
- Smartphones and Tablets: Used for high-performance memory storage and efficient multitasking capabilities in mobile devices.
- Portable Media Players: Applied in handheld entertainment devices for smooth video playback and responsive user interfaces.
- Handheld Gaming Consoles: Integrated into gaming devices for quick data access and seamless gaming experiences.
- Wearable Technology: Utilized in smartwatches and fitness trackers for energy-efficient memory management and data handling.
Equivalent Part
For similar functionalities, consider these alternatives to the H5TQ4G63AFR-PBI:
- MT53B256M32D1: Mobile LPDDR4 SDRAM IC offering high-speed and low-power memory solution for mobile applications.
- K3QF6F60MM-AGCF: Low-power mobile SDRAM IC with compact BGA package for space-constrained mobile designs.
規格
以下是所選零件的基本參數,涉及零件的特性及其所屬類別。
Rohs Code | Yes | Part Life Cycle Code | Obsolete |
Ihs Manufacturer | SK HYNIX INC | Part Package Code | BGA |
Package Description | TFBGA, BGA96,9X16,32 | Pin Count ! | 96 |
ECCN Code | EAR99 | HTS Code ! | 8542.32.00.36 |
Access Mode ! | MULTI BANK PAGE BURST | Access Time-Max | 0.225 ns |
Additional Feature ! | AUTO/SELF REFRESH | Clock Frequency-Max (fCLK) | 800 MHz |
I/O Type | COMMON | Interleaved Burst Length | 4,8 |
JESD-30 Code | R-PBGA-B96 | Length | 13 mm |
Memory Density | 4294967296 bit | Memory IC Type | DDR3L DRAM |
Memory Width | 16 | Number of Functions | 1 |
Number of Ports ! | 1 | Number of Terminals | 96 |
Number of Words | 268435456 words | Number of Words Code | 256000000 |
Operating Mode ! | SYNCHRONOUS | Operating Temperature-Max | 85 °C |
Operating Temperature-Min | -40 °C | Organization | 256MX16 |
Output Characteristics | 3-STATE | Package Body Material | PLASTIC/EPOXY |
Package Code | TFBGA | Package Equivalence Code | BGA96,9X16,32 |
Package Shape | RECTANGULAR | Package Style | GRID ARRAY, THIN PROFILE, FINE PITCH |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | Power Supplies ! | 1.5 V |
Qualification Status ! | Not Qualified | Refresh Cycles | 8192 |
Seated Height-Max | 1.2 mm | Self Refresh | YES |
Sequential Burst Length | 4,8 | Standby Current-Max | 0.017 A |
Supply Current-Max | 0.22 mA | Supply Voltage-Max (Vsup) | 1.45 V |
Supply Voltage-Min (Vsup) | 1.283 V | Supply Voltage-Nom (Vsup) | 1.35 V |
Surface Mount ! | YES | Technology | CMOS |
Temperature Grade ! | INDUSTRIAL | Terminal Form ! | BALL |
Terminal Pitch ! | 0.8 mm | Terminal Position | BOTTOM |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | Width | 9 mm |
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