H5TQ2G83CFR-H9C
DDR DRAM, 256MX8, 20ns, CMOS, PBGA78, HALOGEN FREE AND ROHS COMPLIANT, FBGA-78H5TQ2G83CFR-H9C
DDR DRAM, 256MX8, 20ns, CMOS, PBGA78, HALOGEN FREE AND ROHS COMPLIANT, FBGA-78
-
製造商零件號 # : H5TQ2G83CFR-H9C
-
包裝/封裝: BGA-78
-
製造商: SKHYNIX
-
產品分類 : DRAMs
品質保證
品質保證
從我們的供應鍊網路採購的所有零件都經過嚴格的進貨檢驗流程。 這種細緻的檢查可確保客戶收到的零件是正品並符合要求的標準。 此外,我們還保存這些檢查的詳細記錄,以確保整個供應鏈的透明度和可追溯性。
![ship1](/img/ship1.png)
![ship2](/img/ship2.png)
![ship3](/img/ship3.png)
![ship4](/img/ship4.png)
![ship5](/img/ship5.png)
![ship6](/img/ship6.png)
認證
我們已成功獲得各項認證標準,並建立了自己的專業檢測實驗室。 這確保了我們向客戶提供的每件產品都符合最高的品質標準。 我們遵守嚴格的測試協議,以保持我們產品的一致性和準確性。 為了確保我們的產品是原裝正品,我們還與信譽良好的第三方檢測機構合作進行嚴格的品質測試。 我們對品質的承諾延伸到滿足行業、法律、監管和 ISO 9001:2015 的要求。
運輸與付款
運輸與付款
關於運送
我們通常會在幾個工作日內通過可靠的運輸公司(例如 FedEx、SF、UPS 或 DHL)運送訂單。 我們還支持其他運輸方式。 如果您想詢問具體的運輸細節或費用,請隨時與我們聯繫。
![questionContent1](/img/questionContent1.png)
![questionContent2](/img/questionContent2.png)
![questionContent3](/img/questionContent3.png)
![questionContent4](/img/questionContent4.png)
![ctc](/img//questionContentctc.png)
![pelican](/img//questionContentpelican.png)
![express](/img//questionContentexpress.png)
![chunghwa post](/img//questionContentchunghwapost.png)
關於付款
我們接受多種支付方式,包括VISA、MasterCard、銀聯、西聯、PayPal等渠道。
如果您有特定的付款方式或想詢問費率和其他詳細信息,請隨時與我們聯繫。
![wire](/img/wire.png)
電匯
![questionContent7](/img/questionContent7.png)
Paypal
![cc](/img/cc.png)
信用卡
![western](/img/western.png)
西聯匯款
![mg](/img/mg.png)
速匯金
服務與包裝
服務與包裝
About After Sales Service
All Parts Extended Quality Guarantee
自發貨之日起 90 天內發起申請。
與我們的工作人員確認退貨或換貨。
保持貨物收到時的原始狀態。
最後請注意,退貨或換貨的資格取決於對退貨商品實際狀況的評估。 在完成退貨或換貨流程之前,我們將評估收到的貨物。 如果您對退貨或換貨有任何疑問或需要進一步幫助,請隨時通過以下方式聯絡我們: [email protected]
關於包裝
在包裝方面,我們的產品均精心包裝在防靜電袋中,以提供ESD防靜電保護。 外包裝堅固耐用且閉合牢固。 我們支持各種包裝方法,例如捲帶式、切帶式、管式或託盤式。
![pg](/img/pg.png)
例子
![捲帶式](/img/Tape and Reel.png)
捲帶式
![剪膠帶](/img/Cut Tape.png)
剪膠帶
![管或託盤](/img/Tube or Tray.png)
管或託盤
H5TQ2G83CFR-H9C 數據表
![no-price](/img/no-price.jpg)
目前的價格方案正在編制中。請聯絡我們的客戶服務團隊獲取最新的價格資訊。感謝您的理解和支援!
詳細說明
The H5TQ2G43CFR-xxC, H5TQ2G83CFR-xxC are a 2,147,483,648-bit CMOS Double Data Rate III (DDR3) Synchronous DRAM, ideally suited for the main memory applications which requires large memory density and high bandwidth. SK hynix 2Gb DDR3 SDRAMs offer fully synchronous operations referenced to both rising and falling edges of the clock. While all addresses and control inputs are latched on the rising edges of the CK (falling edges of the CK), Data, Data strobes and Write data masks inputs are sampled on both rising and falling edges of it. The data paths are internally pipelined and 8-bit prefetched to achieve very high bandwidth.FEATURES• VDD=VDDQ=1.5V +/- 0.075V• Fully differential clock inputs (CK, CK) operation• Differential Data Strobe (DQS, DQS)• On chip DLL align DQ, DQS and DQS transition with CK transition• DM masks write data-in at the both rising and falling edges of the data strobe• All addresses and control inputs except data, data strobes and data masks latched on the rising edges of the clock• Programmable CAS latency 5, 6, 7, 8, 9, 10, 11, 12, 13 and 14 supported• Programmable additive latency 0, CL-1, and CL-2 supported• Programmable CAS Write latency (CWL) = 5, 6, 7, 8, 9, 10• Programmable burst length 4/8 with both nibble sequential and interleave mode• BL switch on the fly• 8banks• Average Refresh Cycle (Tcase of0 oC~ 95oC) - 7.8 µs at 0oC ~ 85 oC - 3.9 µs at 85oC ~ 95 oC• JEDEC standard 78ball FBGA(x4/x8)• Driver strength selected by EMRS• Dynamic On Die Termination supported• Asynchronous RESET pin supported• ZQ calibration supported• TDQS (Termination Data Strobe) supported (x8 only)• Write Levelization supported• 8 bit pre-fetch• This product in compliance with the RoHS directive.
![H5TQ2G83CFR-H9C H5TQ2G83CFR-H9C](/files/uploads/product/b/e8924c90-6462-4f3a-6333-08dbbf1058dd.webp)
主要特徵
- VDD=VDDQ=1.5V +/- 0.075V
- Fully differential clock inputs (CK, CK) operation
- Differential Data Strobe (DQS, DQS)
- On chip DLL align DQ, DQS and DQS transition with CK
- transition
- DM masks write data-in at the both rising and falling
- edges of the data strobe
- All addresses and control inputs except data,
- data strobes and data masks latched on the
- rising edges of the clock
- Programmable CAS latency 5, 6, 7, 8, 9, 10, 11, 12, 13
- and 14 supported
- Programmable additive latency 0, CL-1, and CL-2
- supported
- Programmable CAS Write latency (CWL) = 5, 6, 7, 8, 9, 10
- Programmable burst length 4/8 with both nibble
- sequential and interleave mode
- BL switch on the fly
- 8banks
- Average Refresh Cycle (Tcase of0 oC~ 95oC)
- - 7.8 µs at 0oC ~ 85 oC
- - 3.9 µs at 85oC ~ 95 oC
- JEDEC standard 78ball FBGA(x4/x8)
- Driver strength selected by EMRS
- Dynamic On Die Termination supported
- Asynchronous RESET pin supported
- ZQ calibration supported
- TDQS (Termination Data Strobe) supported (x8 only)
- Write Levelization supported
- 8 bit pre-fetch
- This product in compliance with the RoHS directive.
規格
以下是所選零件的基本參數,涉及零件的特性及其所屬類別。
Rohs Code | Yes | Part Life Cycle Code | Obsolete |
Part Package Code | BGA | Pin Count ! | 78 |
Reach Compliance Code | compliant | ECCN Code | EAR99 |
HTS Code ! | 8542.32.00.36 | Access Mode ! | MULTI BANK PAGE BURST |
Access Time-Max | 20 ns | Additional Feature ! | AUTO/SELF REFRESH |
Clock Frequency-Max (fCLK) | 667 MHz | I/O Type | COMMON |
Interleaved Burst Length | 4,8 | JESD-30 Code | R-PBGA-B78 |
JESD-609 Code | e1 | Length | 11 mm |
Memory Density | 2147483648 bit | Memory IC Type | DDR3 DRAM |
Memory Width | 8 | Number of Functions | 1 |
Number of Ports ! | 1 | Number of Terminals | 78 |
Number of Words | 268435456 words | Number of Words Code | 256000000 |
Operating Mode ! | SYNCHRONOUS | Operating Temperature-Max | 85 °C |
Operating Temperature-Min | Organization | 256MX8 | |
Output Characteristics | 3-STATE | Package Body Material | PLASTIC/EPOXY |
Package Code | HBGA | Package Equivalence Code | BGA78,9X13,32 |
Package Shape | RECTANGULAR | Package Style | GRID ARRAY, HEAT SINK/SLUG |
Peak Reflow Temperature (Cel) | 260 | Power Supplies ! | 1.5 V |
Qualification Status ! | Not Qualified | Refresh Cycles | 8192 |
Seated Height-Max | 1.2 mm | Self Refresh | YES |
Sequential Burst Length | 4,8 | Standby Current-Max | 0.012 A |
Supply Current-Max | 0.18 mA | Supply Voltage-Max (Vsup) | 1.575 V |
Supply Voltage-Min (Vsup) | 1.425 V | Supply Voltage-Nom (Vsup) | 1.5 V |
Surface Mount ! | YES | Technology | CMOS |
Temperature Grade ! | OTHER | Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) |
Terminal Form ! | BALL | Terminal Pitch ! | 0.8 mm |
Terminal Position | BOTTOM | Time@Peak Reflow Temperature-Max (s) | 20 |
Width | 7.5 mm |
數據表 PDF
數據表記錄了器件的特性、絕對最大額定值、應用等,這對於作為器件特定應用的整體指南大有裨益。
推薦零件
-
6,121 有存貨
貨物週期: 3~7 天
最小訂購量為 1
-
6,611 有存貨
貨物週期: 3~7 天
最小訂購量為 1
-
Packaged in a 96-ball FBGA with PBGA design, utilizing CMOS technology for efficient performance
製造商: Hynix 包裝/箱: BGA96
6,237 有存貨
貨物週期: 3~7 天
最小訂購量為 1
-
7,096 有存貨
貨物週期: 3~7 天
最小訂購量為 1
-
H5TC4G63EFR-PBA
$2.759 H5TC4G63EFR-PBA is a 4Gb DDR3 SDRAM chip that offers high speed and low power consumption for improved performance in electronic devices
製造商: SKHYNIX 包裝/箱: BGA
6,692 有存貨
貨物週期: 3~7 天
最小訂購量為 1
-
5,941 有存貨
貨物週期: 3~7 天
最小訂購量為 1
-
Enhancing system reliability and efficiency with robust design
製造商: SKHYNIX 包裝/箱: FBGA84
4,032 有存貨
貨物週期: 3~7 天
最小訂購量為 1
-
H5AN8G6NCJR-VKC
$4.654 The H5AN8G6NCJR-VKC chip is a high-performance NAND flash memory device designed for use in various electronic devices
製造商: SKHYNIX 包裝/箱: FBGA
5,736 有存貨
貨物週期: 3~7 天
最小訂購量為 1
-
The H5TC8G63AMR-PBA chip is a DDR4 SDRAM module commonly used in computing devices
製造商: SKHYNIX 包裝/箱: FBGA-96
6,109 有存貨
貨物週期: 3~7 天
最小訂購量為 1
-
4,907 有存貨
貨物週期: 3~7 天
最小訂購量為 1
-
4,685 有存貨
貨物週期: 3~7 天
最小訂購量為 1
-
A fast-paced, power-efficient memory solution ideal for high-end smartphones and tablets
製造商: SKHYNIX 包裝/箱: BGA
3,924 有存貨
貨物週期: 3~7 天
最小訂購量為 1
-
Enhanced Memory Solution for Business and Consumer Use
製造商: Sk Hynix Inc 包裝/箱: FBGA-96
3,215 有存貨
貨物週期: 3~7 天
最小訂購量為 1
-
7,332 有存貨
貨物週期: 3~7 天
最小訂購量為 1
-
H5AN8G6NAFR-VKC
$7.973 Compact high-performance memory solution for demanding application
製造商: SKHYNIX 包裝/箱: FBGA-96
4,831 有存貨
貨物週期: 3~7 天
最小訂購量為 1