ZXMHC6A07T8TA
ZXMHC6A07T8TA is a MOSFET assembly designed for half-bridge setups, comprising two N-channel and two P-channel MOSFETs packaged in SOT-223-8ZXMHC6A07T8TA
ZXMHC6A07T8TA is a MOSFET assembly designed for half-bridge setups, comprising two N-channel and two P-channel MOSFETs packaged in SOT-223-8
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製造商零件號 # : ZXMHC6A07T8TA
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包裝/封裝: SM-8
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零件狀態 : Active
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製造商: Diodes Incorporated
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產品分類 : FET, MOSFET Arrays
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ZXMHC6A07T8TA 數據表
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目前的價格方案正在編制中。請聯絡我們的客戶服務團隊獲取最新的價格資訊。感謝您的理解和支援!
詳細說明
The ZXMHC6A07T8TA ZETEX Discrete Semiconductor Products FETs - Arrays is a 4-channel FET array with 2 N and 2 P-Channel (H-Bridge) FETs. It has a maximum power dissipation of 1.7 W and a drain-source resistance of 300 mOhms 425 mOhms. It is packaged in a SM8 Cut Tape (CT) Alternate Packaging and has an operating temperature range of -55°C ~ 150°C (TJ). It has a gate charge of 3.2nC @ 10V and a transconductance of 2.3 S 1.8 S. The maximum drain-source resistance is 300 mOhm @ 1.8A, 10V.Features:• 4-channel FET array with 2 N and 2 P-Channel (H-Bridge) FETs• Maximum power dissipation of 1.7 W• Drain-source resistance of 300 mOhms 425 mOhms• Packaged in a SM8 Cut Tape (CT) Alternate Packaging• Operating temperature range of -55°C ~ 150°C (TJ)• Gate charge of 3.2nC @ 10V• Transconductance of 2.3 S 1.8 S• Maximum drain-source resistance of 300 mOhm @ 1.8A, 10VApplications:The ZXMHC6A07T8TA ZETEX Discrete Semiconductor Products FETs - Arrays is suitable for use in applications such as motor control, power management, and power conversion. It can also be used in automotive, industrial, and consumer electronics.
![](/files/uploads/product/b/12fc802cb0ee494082abc9aaf5c222ba.webp)
主要特徵
- 4-channel FET array with 2 N and 2 P-Channel (H-Bridge) FETs
- Maximum power dissipation of 1.7 W
- Drain-source resistance of 300 mOhms 425 mOhms
- Packaged in a SM8 Cut Tape (CT) Alternate Packaging
- Operating temperature range of -55°C ~ 150°C (TJ)
- Gate charge of 3.2nC @ 10V
- Transconductance of 2.3 S 1.8 S
- Maximum drain-source resistance of 300 mOhm @ 1.8A, 10V
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規格
以下是所選零件的基本參數,涉及零件的特性及其所屬類別。
Rohs Code | Yes | Part Life Cycle Code | Transferred |
Reach Compliance Code | compliant | ECCN Code | EAR99 |
Configuration | BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 60 V |
Drain Current-Max (ID) | 1.8 A | Drain-source On Resistance-Max | 0.3 Ω |
FET Technology | METAL-OXIDE SEMICONDUCTOR | JESD-30 Code | R-PDSO-G8 |
JESD-609 Code | e3 | Moisture Sensitivity Level | 1 |
Number of Elements | 4 | Number of Terminals | 8 |
Operating Mode ! | ENHANCEMENT MODE | Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR | Package Style | SMALL OUTLINE |
Peak Reflow Temperature (Cel) | 260 | Polarity/Channel Type | N-CHANNEL AND P-CHANNEL |
Pulsed Drain Current-Max (IDM) | 8.7 A | Qualification Status ! | Not Qualified |
Surface Mount ! | YES | Terminal Finish | Matte Tin (Sn) |
Terminal Form ! | GULL WING | Terminal Position | DUAL |
Time@Peak Reflow Temperature-Max (s) | 40 | Transistor Application | SWITCHING |
Transistor Element Material | SILICON | Manufacturer | Diodes Incorporated |
Product Category ! | MOSFET | RoHS | Details |
Technology | Si | Mounting Style | SMD/SMT |
Package / Case | SM-8 | Transistor Polarity | N-Channel, P-Channel |
Number of Channels | 4 Channel | Vds - Drain-Source Breakdown Voltage | 60 V |
Id - Continuous Drain Current | 1.8 A, 1.5 A | Rds On - Drain-Source Resistance | 300 mOhms, 425 mOhms |
Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 1 V |
Qg - Gate Charge | 3.2 nC, 5.1 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature ! | + 150 C | Pd - Power Dissipation | 1.3 W |
Channel Mode | Enhancement | Series | ZXMHC6A |
Brand | Diodes Incorporated | Fall Time | 2 ns, 5.8 ns |
Forward Transconductance - Min | 2.3 S, 1.8 S | Height | 1.6 mm |
Length | 6.7 mm | Product | MOSFET Small Signal |
Product Type ! | MOSFET | Rise Time ! | 1.4 ns, 2.3 ns |
Factory Pack Quantity | 1000 | Subcategory | MOSFETs |
Transistor Type | 2 N-Channel, 2 P-Channel | Type | MOSFET |
Typical Turn-Off Delay Time | 4.9 ns, 13 ns | Typical Turn-On Delay Time | 1.8 ns, 1.6 ns |
Width | 3.7 mm | Unit Weight | 0.002610 oz |
數據表 PDF
數據表記錄了器件的特性、絕對最大額定值、應用等,這對於作為器件特定應用的整體指南大有裨益。
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