ZXMC4559DN8TC
Compact SOIC package for space-constrained designZXMC4559DN8TC
Compact SOIC package for space-constrained design
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ZXMC4559DN8TC 數據表
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詳細說明
The ZXMC4559DN8TC is a cutting-edge MOSFET designed for high-performance DC-DC converters. With a maximum voltage rating of 100V and a maximum continuous drain current of 1.4A, this device is built to handle demanding power conversion applications with ease. Its low on-resistance of 1.5 ohms at 10V gate voltage ensures efficient operation, reducing power losses and improving overall system efficiency. The compact DFN8 package makes the ZXMC4559DN8TC ideal for space-constrained designs, while its low input and output capacitance further enhance its performance by minimizing switching losses
主要特徵
- Low on-resistance
- High-performance dual SPST analog switch
- Low threshold voltage
- Low input/output leakage currents
- Wide operating voltage range: ±2.5V to ±20V
- Operating temperature range: -40°C to +85°C
- 8-pin DFN package
- Designed for use in industrial and automotive applications
應用
- DC-DC converters
- Motor control circuits
- Power management systems
- LED lighting
- Automotive electronics
- Industrial control systems
- Battery charge management
- Audio amplifiers
- Telecommunications equipment
- Medical devices
規格
以下是所選零件的基本參數,涉及零件的特性及其所屬類別。
Rohs Code | Yes | Part Life Cycle Code | Transferred |
Reach Compliance Code | ECCN Code | EAR99 | |
Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 60 V |
Drain Current-Max (Abs) (ID) | 3.6 A | Drain Current-Max (ID) | 3.6 A |
Drain-source On Resistance-Max | 0.055 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
JESD-30 Code | R-PDSO-G8 | JESD-609 Code | e3 |
Moisture Sensitivity Level | 1 | Number of Elements | 2 |
Number of Terminals | 8 | Operating Mode ! | ENHANCEMENT MODE |
Operating Temperature-Max | 150 °C | Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR | Package Style | SMALL OUTLINE |
Peak Reflow Temperature (Cel) | 260 | Polarity/Channel Type | N-CHANNEL AND P-CHANNEL |
Power Dissipation-Max (Abs) | 2.1 W | Qualification Status ! | Not Qualified |
Surface Mount ! | YES | Terminal Finish | Matte Tin (Sn) |
Terminal Form ! | GULL WING | Terminal Position | DUAL |
Time@Peak Reflow Temperature-Max (s) | 40 | Transistor Application | SWITCHING |
Transistor Element Material | SILICON | Manufacturer | Diodes Incorporated |
Product Category ! | MOSFET | RoHS | Details |
Technology | Si | Mounting Style | SMD/SMT |
Package / Case | SOIC-8 | Transistor Polarity | N-Channel, P-Channel |
Number of Channels | 2 Channel | Vds - Drain-Source Breakdown Voltage | 60 V |
Id - Continuous Drain Current | 3.6 A, 2.6 A | Rds On - Drain-Source Resistance | 55 mOhms, 125 mOhms |
Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 1 V |
Qg - Gate Charge | 20.4 nC, 12.1 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature ! | + 150 C | Pd - Power Dissipation | 1.25 W |
Channel Mode | Enhancement | Series | ZXMC4 |
Brand | Diodes Incorporated | Fall Time | 10.6 ns, 10 ns |
Forward Transconductance - Min | 10.2 S, 7.2 S | Product Type ! | MOSFET |
Rise Time ! | 4.1 ns, 4.1 ns | Factory Pack Quantity | 2500 |
Subcategory | MOSFETs | Transistor Type | 1 N-Channel, 1 P-Channel |
Typical Turn-Off Delay Time | 26.2 ns, 35 ns | Typical Turn-On Delay Time | 3.5 ns, 3.5 ns |
Unit Weight | 0.026455 oz |
數據表 PDF
數據表記錄了器件的特性、絕對最大額定值、應用等,這對於作為器件特定應用的整體指南大有裨益。
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