TN2404K-T1-E3
TN2404K-T1-E3: N-Channel MOSFET rated for 240 V (D-S)TN2404K-T1-E3
TN2404K-T1-E3: N-Channel MOSFET rated for 240 V (D-S)
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TN2404K-T1-E3 數據表
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詳細說明
FEATURES• Low On-Resistance: 4 • Secondary Breakdown Free: 260 V• Low Power/Voltage Driven• Low Input and Output Leakage• Excellent Thermal Stability• Material categorization: For definitions of compliance please see www.vishay.com/doc?99912BENEFITS• Low Offset Voltage• Full-Voltage Operation• Easily Driven Without Buffer• Low Error Voltage• No High-Temperature “Run-Away”APPLICATIONS• High-Voltage Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Transistors, etc.• Telephone Mute Switches, Ringer Circuits• Power Supply, Converters• Motor Control
![](/files/uploads/product/b/7e430be063cb4333be183eff52c7bf54.webp)
主要特徵
- Low On-Resistance: 4
- Secondary Breakdown Free: 260 V
- Low Power/Voltage Driven
- Low Input and Output Leakage
- Excellent Thermal Stability
規格
以下是所選零件的基本參數,涉及零件的特性及其所屬類別。
Product Category ! | MOSFET | RoHS | Details |
Technology | Si | Mounting Style | SMD/SMT |
Package / Case | SOT-23-3 | Transistor Polarity | N-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 257 V |
Id - Continuous Drain Current | 200 mA | Rds On - Drain-Source Resistance | 2.2 Ohms |
Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 1.65 V |
Qg - Gate Charge | 4.87 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature ! | + 150 C | Pd - Power Dissipation | 360 mW |
Channel Mode | Enhancement | Tradename | TrenchFET |
Series | TN2 | Brand | Vishay Semiconductors |
Configuration | Single | Fall Time | 16 ns |
Forward Transconductance - Min | 1.6 S | Height | 1.45 mm |
Length | 2.9 mm | Product Type ! | MOSFET |
Rise Time ! | 12 ns | Factory Pack Quantity | 3000 |
Subcategory | MOSFETs | Transistor Type | 1 N-Channel |
Typical Turn-Off Delay Time | 35 ns | Typical Turn-On Delay Time | 5 ns |
Width | 1.6 mm | Part # Aliases | TN2404K-T1 |
Unit Weight | 0.000282 oz |
數據表 PDF
數據表記錄了器件的特性、絕對最大額定值、應用等,這對於作為器件特定應用的整體指南大有裨益。
常見問題解答
What is TN2404K-T1-E3?
The TN2404K-T1-E3 is a 40 V P-Channel enhancement-mode vertical D-MOSFET transistor designed by Vishay Siliconix. It is commonly used in power management and switching applications, offering low on-resistance and high current-handling capabilities.
How Does TN2404K-T1-E3 Work?
The TN2404K-T1-E3 works as a P-Channel MOSFET transistor, allowing current to flow in the reverse direction when a negative voltage is applied to the gate terminal. It is typically used to switch off power to a load or control the voltage level in a circuit.
How Many Pins does TN2404K-T1-E3 have and What are the Functions of the Pinout Configuration?
The TN2404K-T1-E3 is housed in a TO-252 (DPAK) package. The pinout configuration includes:
- G (Gate): Controls the flow of current through the transistor.
- D (Drain): Where the output or load is connected.
- S (Source): The common connection for input and output circuits.
What are the Pros and Cons of TN2404K-T1-E3?
Pros:
- High Voltage Rating: With a 40 V rating, it can handle relatively high voltages.
- Low On-Resistance: Provides efficient current conduction with minimal power loss.
- Enhancement-Mode Design: Offers easy control of the channel with negative gate voltage.
- Compact TO-252 Package: Space-efficient and suitable for small circuit designs.
Cons:
- Drive Voltage Polarity: Requires negative gate voltage for P-Channel operation, which may not be compatible with all circuits.
- Heat Dissipation: May require additional heat sinking for high-power applications due to higher on-resistance.
Are There Any Equivalents/Alternatives to TN2404K-T1-E3 for Recommendation?
- Alternative P-Channel MOSFETs to the TN2404K-T1-E3 include the IRF4905 from Infineon Technologies and the SI2323DS from Vishay Siliconix.
- Equivalents to consider are the FDD8424H from ON Semiconductor and the BSS84 from Nexperia.
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