SQ2361ES-T1-GE3
P-Channel MOSFET with a 60V rating, capable of handling currents up to 2SQ2361ES-T1-GE3
P-Channel MOSFET with a 60V rating, capable of handling currents up to 2
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SQ2361ES-T1-GE3 數據表
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詳細說明
Whether used in battery management systems, motor control units, or LED lighting applications, this 60V P-Channel MOSFET provides a cost-effective and high-performance solution for automotive power electronics. Trust the SQ2361ES-T1_GE3 to deliver superior performance and reliability in your next automotive design project
![SQ2361ES-T1-GE3 SQ2361ES-T1-GE3](/files/uploads/product/b/89ee718e-2cf5-4993-a1ec-08dbbf1058dd.webp)
主要特徵
- Precision voltage regulator
- Over-current protection mechanism
- Ruggedized and resistant to environmental stressors
應用
- Integrated energy management
- Reliable solar inverters
- Cutting-edge battery management
規格
以下是所選零件的基本參數,涉及零件的特性及其所屬類別。
Rohs Code | Yes | Part Life Cycle Code | Active |
Reach Compliance Code | compliant | ECCN Code | EAR99 |
Avalanche Energy Rating (Eas) | 7.8 mJ | Configuration | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 60 V | Drain Current-Max (ID) | 2.8 A |
Drain-source On Resistance-Max | 0.177 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
Feedback Cap-Max (Crss) | 42 pF | JEDEC-95 Code | TO-236AB |
JESD-30 Code | R-PDSO-G3 | JESD-609 Code | e3 |
Moisture Sensitivity Level | 1 | Number of Elements | 1 |
Number of Terminals | 3 | Operating Mode ! | ENHANCEMENT MODE |
Operating Temperature-Max | 175 °C | Operating Temperature-Min | -55 °C |
Package Body Material | PLASTIC/EPOXY | Package Shape | RECTANGULAR |
Package Style | SMALL OUTLINE | Polarity/Channel Type | P-CHANNEL |
Pulsed Drain Current-Max (IDM) | 11 A | Reference Standard | AEC-Q101 |
Surface Mount ! | YES | Terminal Finish | MATTE TIN |
Terminal Form ! | GULL WING | Terminal Position | DUAL |
Transistor Element Material | SILICON | Turn-off Time-Max (toff) | 32 ns |
Turn-on Time-Max (ton) | 23 ns |
數據表 PDF
數據表記錄了器件的特性、絕對最大額定值、應用等,這對於作為器件特定應用的整體指南大有裨益。
常見問題解答
What is SQ2361ES-T1-GE3?
The SQ2361ES-T1-GE3 is a high-speed, low RDS(ON) dual N-channel MOSFET designed by Vishay Siliconix. It is ideal for applications requiring efficient power switching, such as power management, motor control, and LED lighting.
How Does SQ2361ES-T1-GE3 Work?
The SQ2361ES-T1-GE3 operates as a dual N-channel MOSFET to control the flow of current in a circuit. It features low RDS(ON) to minimize power losses and enhance efficiency in power switching applications. The MOSFET can be driven by a gate voltage to turn the device on and off rapidly.
How Many Pins does SQ2361ES-T1-GE3 have and What are the Functions of the Pinout Configuration?
The SQ2361ES-T1-GE3 is housed in a 6-pin PowerPAK SO-8 package. The pinout configuration includes:
- Gate (1, 2): Control pins for the N-channel MOSFETs.
- Drain (1, 2): Output pins for the N-channel MOSFETs.
- Source (1, 2): Ground pins for the N-channel MOSFETs.
What are the Pros and Cons of SQ2361ES-T1-GE3?
Pros:
- High-Speed Switching: Enables rapid on/off switching for efficient power control.
- Low RDS(ON): Reduces power losses and improves power efficiency.
- Dual MOSFET Configuration: Allows for independent control of two channels in a single package.
- Compact Package: The PowerPAK SO-8 package offers space-saving benefits.
Cons:
- Gate Drive Complexity: Requires proper gate driving to ensure optimal performance.
- Heat Dissipation: May require additional thermal management for high-power applications.
- Overvoltage Protection: External protection circuits may be needed for overvoltage conditions.
Are There Any Equivalents/Alternatives to SQ2361ES-T1-GE3 for Recommendation?
- The SI7852DP-T1-GE3 from Vishay Siliconix is a similar dual N-channel MOSFET option.
- Alternative MOSFETs to consider include the IRFH5300TRPBF from Infineon Technologies and the FDU6846 from Fairchild Semiconductor.
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