HY5DU56822DT-D43

Name: HY5DU56822DT-D43
Rating: 4.5 (10 reviews)

DDR DRAM, 32MX8, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66

3,617 有效庫存

HY5DU56822DT-D43

有效庫存3,617

DDR DRAM, 32MX8, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66

製造商零件號 # : HY5DU56822DT-D43
包裝/封裝: TSOP66
製造商: HYNIX

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HY5DU56822DT-D43 數據表

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詳細說明

The Hynix HY5DV641622 is a 67,108,864-bit CMOS Double Data Rate(DDR) Synchronous DRAM, ideally suited for the point-to-point applications which requires high bandwidth.FEATURES •3.3V for VDDand 2.5V for VDDQpower supply • All inputs and outputs are compatible with SSTL_2 interface • JEDEC standard 400mil 66pin TSOP-II with 0.65mm pin pitch • Fully differential clock inputs (CK, /CK) operation • Double data rate interface • Source synchronous - data transaction aligned to bidirectional data strobe (DQS) • x16 device has 2 bytewide data strobes (LDQS, UDQS) per each x8 I/O • Data outputs on DQS edges when read (edged DQ) Data inputs on DQS centers when write (centered DQ) • Data(DQ) and Write masks(DM) latched on the both rising and falling edges of the data strobe • All addresses and control inputs except Data, Data strobes and Data masks latched on the rising edges of the clock • Write mask byte controls by LDM and UDM • Programmable /CAS Latency 3 / 4 supported • Programmable Burst Length 2 / 4 / 8 with both sequential and interleave mode • Internal 4 bank operations with single pulsed /RAS • tRAS Lock-Out function supported • Auto refresh and self refresh supported • 4096 refresh cycles / 64ms • Full, Half and Matched Impedance(Weak) strength driver option controlled by EMRS

主要特徵

3.3V for VDDand 2.5V for VDDQpower supply
All inputs and outputs are compatible with SSTL_2 interface
JEDEC standard 400mil 66pin TSOP-II with 0.65mm pin pitch
Fully differential clock inputs (CK, /CK) operation
Double data rate interface
Source synchronous - data transaction aligned to bidirectional data strobe (DQS)
x16 device has 2 bytewide data strobes (LDQS, UDQS) per each x8 I/O
Data outputs on DQS edges when read (edged DQ) Data inputs on DQS centers when write (centered DQ)
Data(DQ) and Write masks(DM) latched on the both rising and falling edges of the data strobe
All addresses and control inputs except Data, Data strobes and Data masks latched on the rising edges of the clock
Write mask byte controls by LDM and UDM
Programmable /CAS Latency 3 / 4 supported
Programmable Burst Length 2 / 4 / 8 with both sequential and interleave mode
Internal 4 bank operations with single pulsed /RAS
tRAS Lock-Out function supported
Auto refresh and self refresh supported
4096 refresh cycles / 64ms
Full, Half and Matched Impedance(Weak) strength driver option controlled by EMRS

規格

以下是所選零件的基本參數，涉及零件的特性及其所屬類別。

Pbfree Code	No	Rohs Code	No
Part Life Cycle Code	Obsolete	Part Package Code	TSOP2
Pin Count !	66	Reach Compliance Code
ECCN Code	EAR99	HTS Code !	8542.32.00.24
Access Mode !	FOUR BANK PAGE BURST	Access Time-Max	0.7 ns
Additional Feature !	AUTO/SELF REFRESH	Clock Frequency-Max (fCLK)	200 MHz
I/O Type	COMMON	Interleaved Burst Length	2,4,8
JESD-30 Code	R-PDSO-G66	Length	22.225 mm
Memory Density	268435456 bit	Memory IC Type	DDR1 DRAM
Memory Width	8	Number of Functions	1
Number of Ports !	1	Number of Terminals	66
Number of Words	33554432 words	Number of Words Code	32000000
Operating Mode !	SYNCHRONOUS	Operating Temperature-Max	70 °C
Operating Temperature-Min		Organization	32MX8
Output Characteristics	3-STATE	Package Body Material	PLASTIC/EPOXY
Package Code	TSSOP	Package Equivalence Code	TSSOP66,.46
Package Shape	RECTANGULAR	Package Style	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
Peak Reflow Temperature (Cel)	NOT SPECIFIED	Power Supplies !	2.6 V
Qualification Status !	Not Qualified	Refresh Cycles	8192
Seated Height-Max	1.194 mm	Self Refresh	YES
Sequential Burst Length	2,4,8	Standby Current-Max	0.01 A
Supply Current-Max	0.23 mA	Supply Voltage-Max (Vsup)	2.7 V
Supply Voltage-Min (Vsup)	2.5 V	Supply Voltage-Nom (Vsup)	2.6 V
Surface Mount !	YES	Technology	CMOS
Temperature Grade !	COMMERCIAL	Terminal Form !	GULL WING
Terminal Pitch !	0.65 mm	Terminal Position	DUAL
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED	Width	10.16 mm

Specification Comparison

HY5DU56822DT-D43 vs HY5DU561622ETP-D43 vs HY5DU561622FTP-4 HY5DU56822BT-D43 vs HY5DU56822DT-D43 vs HY5DU561622ETP-D43

數據表 PDF

數據表記錄了器件的特性、絕對最大額定值、應用等，這對於作為器件特定應用的整體指南大有裨益。

初步規格 HY5DU56822DT-D43 PDF 下載

常見問題解答

What is HY5DU56822DT-D43?

The HY5DU56822DT-D43 is a double data rate synchronous dynamic random access memory (DDR SDRAM) module designed by Hynix Semiconductor. It is commonly used in computing systems for fast and efficient data storage and retrieval.

How Does HY5DU56822DT-D43 Work?

The HY5DU56822DT-D43 works by storing data in memory cells that can be accessed in a synchronized manner with the system clock signals. It utilizes double data rate technology to transfer data on both the rising and falling edges of the clock cycle, effectively doubling the data transfer rate. This allows for high-speed data processing and improved system performance.

How Many Pins does HY5DU56822DT-D43 have and What are the Functions of the Pinout Configuration?

The HY5DU56822DT-D43 is typically available in a 66-pin TSOP (Thin Small Outline Package) configuration. The pinout configuration includes:

DQ0-DQ15: Data input/output pins for 16 data bits.
DM0-DM7: Data mask pins for masking data inputs/outputs.
CLK, CLKEN: Clock input pins for synchronization.
CAS, RAS, WE: Control pins for row and column address strobes and write enable signals.
CS: Chip select pin for activating the memory module.
CKE: Clock enable pin for controlling clock input.
BA0-BA1: Bank address pins for selecting memory banks.
CS0-CS1: Chip select pins for additional memory modules.

What are the Pros and Cons of HY5DU56822DT-D43?

Pros:

High Speed: Offers fast data transfer rates for improved system performance.
Large Capacity: Provides ample data storage capacity for various applications.
DDR Technology: Utilizes double data rate technology for efficient data processing.
Synchronous Operation: Operates in sync with the system clock for reliable data access.

Cons:

Complex Interface: Requires proper configuration and timing specifications for optimal performance.
Power Consumption: DDR SDRAM modules can consume more power compared to other memory technologies.
Compatibility Challenges: May require compatibility checks for seamless integration with existing systems.

Are There Any Equivalents/Alternatives to HY5DU56822DT-D43 for Recommendation?

Similar DDR SDRAM modules like the MT47H256M8EB-25E:D from Micron Technology can be considered.
Alternatives to the HY5DU56822DT-D43 include the K4H511638D-LCCC from Samsung and the M470T6554CZ3-CD5 from SK Hynix.