H26M31001FPR
153-ball PBGA flash memory module, with a size of 11.50 x 13 mm and 0.80 mm heightH26M31001FPR
153-ball PBGA flash memory module, with a size of 11.50 x 13 mm and 0.80 mm height
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H26M31001FPR 數據表
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目前的價格方案正在編制中。請聯絡我們的客戶服務團隊獲取最新的價格資訊。感謝您的理解和支援!
詳細說明
Oven-Controlled Crystal Oscillator (OCXO) for Fixed Communication EquipmentFeatures● Compact.● Excellent rise characteristics.● Excellent phase noise characteristics.● Excellent aging characteristics.Main Application● Mobile communication base station● Measuring instrument● Synthesizer● Exchanger● High-end router
主要特徵
- Compact.
- Excellent rise characteristics.
- Excellent phase noise characteristics.
- Excellent aging characteristics.
規格
以下是所選零件的基本參數,涉及零件的特性及其所屬類別。
Part Life Cycle Code | Obsolete | Part Package Code | BGA |
Pin Count ! | 153 | Reach Compliance Code | |
ECCN Code | EAR99 | HTS Code ! | 8542.32.00.51 |
Alternate Memory Width | 4 | JESD-30 Code | R-PBGA-B153 |
Length | 13 mm | Memory Density | 34359738368 bit |
Memory IC Type | FLASH | Memory Width | 8 |
Number of Functions | 1 | Number of Terminals | 153 |
Number of Words | 4294967296 words | Number of Words Code | 4000000000 |
Operating Mode ! | SYNCHRONOUS | Operating Temperature-Max | 85 °C |
Operating Temperature-Min | -25 °C | Organization | 4GX8 |
Package Body Material | PLASTIC/EPOXY | Package Code | VFBGA |
Package Shape | RECTANGULAR | Package Style | GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
Parallel/Serial | PARALLEL | Programming Voltage ! | 3.3 V |
Seated Height-Max | 0.8 mm | Supply Voltage-Max (Vsup) | 3.6 V |
Supply Voltage-Min (Vsup) | 2.7 V | Supply Voltage-Nom (Vsup) | 3.3 V |
Surface Mount ! | YES | Technology | CMOS |
Temperature Grade ! | OTHER | Terminal Form ! | BALL |
Terminal Pitch ! | 0.5 mm | Terminal Position | BOTTOM |
Width | 11.5 mm |
數據表 PDF
數據表記錄了器件的特性、絕對最大額定值、應用等,這對於作為器件特定應用的整體指南大有裨益。
常見問題解答
What is H26M31001FPR?
The H26M31001FPR is a 128GB eMMC (embedded MultiMediaCard) storage solution designed by Samsung. It is a compact and integrated flash memory storage device commonly used in mobile phones, tablets, and other portable electronic devices.
How Does H26M31001FPR Work?
The H26M31001FPR works by storing data in a non-volatile flash memory that can be accessed by the host device for reading and writing operations. It integrates the flash memory, controller, and interface into a single package, providing a reliable and high-density storage solution for embedded applications.
How Many Pins does H26M31001FPR have and What are the Functions of the Pinout Configuration?
The H26M31001FPR is typically housed in a BGA (Ball Grid Array) package, with a specific pinout configuration that includes power supply pins, data I/O pins, clock input, and control signals. The exact pinout will depend on the specific package variant and should be referenced from the manufacturer's datasheet.
What are the Pros and Cons of H26M31001FPR?
Pros:
- High Capacity: Offers a large storage capacity in a compact form factor.
- Integration: Combines flash memory and controller in a single package for simplified design.
- Reliability: Provides a reliable and durable storage solution for embedded applications.
- Low Power Consumption: Consumes minimal power, suitable for battery-powered devices.
Cons:
- Non-Upgradeable: Some eMMC storage solutions may not be upgradeable or user-expandable.
- Performance Limitations: May not offer the same performance capabilities as high-speed SSDs in certain applications.
- Relatively Fixed Configuration: The integrated nature of eMMC may limit flexibility in system configuration.
Are There Any Equivalents/Alternatives to H26M31001FPR for Recommendation?
Other eMMC storage solutions from manufacturers such as Micron, Toshiba, and SK Hynix can serve as alternatives to the H26M31001FPR. It is essential to compare specifications, performance, and compatibility with the specific application requirements when considering alternatives.
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