HY5DU561622CT-4
DDR DRAM, 16MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66HY5DU561622CT-4
DDR DRAM, 16MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66
品質保證
品質保證
從我們的供應鍊網路採購的所有零件都經過嚴格的進貨檢驗流程。 這種細緻的檢查可確保客戶收到的零件是正品並符合要求的標準。 此外,我們還保存這些檢查的詳細記錄,以確保整個供應鏈的透明度和可追溯性。
![ship1](/img/ship1.png)
![ship2](/img/ship2.png)
![ship3](/img/ship3.png)
![ship4](/img/ship4.png)
![ship5](/img/ship5.png)
![ship6](/img/ship6.png)
認證
我們已成功獲得各項認證標準,並建立了自己的專業檢測實驗室。 這確保了我們向客戶提供的每件產品都符合最高的品質標準。 我們遵守嚴格的測試協議,以保持我們產品的一致性和準確性。 為了確保我們的產品是原裝正品,我們還與信譽良好的第三方檢測機構合作進行嚴格的品質測試。 我們對品質的承諾延伸到滿足行業、法律、監管和 ISO 9001:2015 的要求。
運輸與付款
運輸與付款
關於運送
我們通常會在幾個工作日內通過可靠的運輸公司(例如 FedEx、SF、UPS 或 DHL)運送訂單。 我們還支持其他運輸方式。 如果您想詢問具體的運輸細節或費用,請隨時與我們聯繫。
![questionContent1](/img/questionContent1.png)
![questionContent2](/img/questionContent2.png)
![questionContent3](/img/questionContent3.png)
![questionContent4](/img/questionContent4.png)
![ctc](/img//questionContentctc.png)
![pelican](/img//questionContentpelican.png)
![express](/img//questionContentexpress.png)
![chunghwa post](/img//questionContentchunghwapost.png)
關於付款
我們接受多種支付方式,包括VISA、MasterCard、銀聯、西聯、PayPal等渠道。
如果您有特定的付款方式或想詢問費率和其他詳細信息,請隨時與我們聯繫。
![wire](/img/wire.png)
電匯
![questionContent7](/img/questionContent7.png)
Paypal
![cc](/img/cc.png)
信用卡
![western](/img/western.png)
西聯匯款
![mg](/img/mg.png)
速匯金
服務與包裝
服務與包裝
About After Sales Service
All Parts Extended Quality Guarantee
自發貨之日起 90 天內發起申請。
與我們的工作人員確認退貨或換貨。
保持貨物收到時的原始狀態。
最後請注意,退貨或換貨的資格取決於對退貨商品實際狀況的評估。 在完成退貨或換貨流程之前,我們將評估收到的貨物。 如果您對退貨或換貨有任何疑問或需要進一步幫助,請隨時通過以下方式聯絡我們: [email protected]
關於包裝
在包裝方面,我們的產品均精心包裝在防靜電袋中,以提供ESD防靜電保護。 外包裝堅固耐用且閉合牢固。 我們支持各種包裝方法,例如捲帶式、切帶式、管式或託盤式。
![pg](/img/pg.png)
例子
![捲帶式](/img/Tape and Reel.png)
捲帶式
![剪膠帶](/img/Cut Tape.png)
剪膠帶
![管或託盤](/img/Tube or Tray.png)
管或託盤
HY5DU561622CT-4 數據表
![no-price](/img/no-price.jpg)
目前的價格方案正在編制中。請聯絡我們的客戶服務團隊獲取最新的價格資訊。感謝您的理解和支援!
詳細說明
The Hynix HY5DV641622 is a 67,108,864-bit CMOS Double Data Rate(DDR) Synchronous DRAM, ideally suited for the point-to-point applications which requires high bandwidth.FEATURES •3.3V for VDDand 2.5V for VDDQpower supply • All inputs and outputs are compatible with SSTL_2 interface • JEDEC standard 400mil 66pin TSOP-II with 0.65mm pin pitch • Fully differential clock inputs (CK, /CK) operation • Double data rate interface • Source synchronous - data transaction aligned to bidirectional data strobe (DQS) • x16 device has 2 bytewide data strobes (LDQS, UDQS) per each x8 I/O • Data outputs on DQS edges when read (edged DQ) Data inputs on DQS centers when write (centered DQ) • Data(DQ) and Write masks(DM) latched on the both rising and falling edges of the data strobe • All addresses and control inputs except Data, Data strobes and Data masks latched on the rising edges of the clock • Write mask byte controls by LDM and UDM • Programmable /CAS Latency 3 / 4 supported • Programmable Burst Length 2 / 4 / 8 with both sequential and interleave mode • Internal 4 bank operations with single pulsed /RAS • tRAS Lock-Out function supported • Auto refresh and self refresh supported • 4096 refresh cycles / 64ms • Full, Half and Matched Impedance(Weak) strength driver option controlled by EMRS
主要特徵
- 3.3V for VDDand 2.5V for VDDQpower supply
- All inputs and outputs are compatible with SSTL_2 interface
- JEDEC standard 400mil 66pin TSOP-II with 0.65mm pin pitch
- Fully differential clock inputs (CK, /CK) operation
- Double data rate interface
- Source synchronous - data transaction aligned to bidirectional data strobe (DQS)
- x16 device has 2 bytewide data strobes (LDQS, UDQS) per each x8 I/O
- Data outputs on DQS edges when read (edged DQ) Data inputs on DQS centers when write (centered DQ)
- Data(DQ) and Write masks(DM) latched on the both rising and falling edges of the data strobe
- All addresses and control inputs except Data, Data strobes and Data masks latched on the rising edges of the clock
- Write mask byte controls by LDM and UDM
- Programmable /CAS Latency 3 / 4 supported
- Programmable Burst Length 2 / 4 / 8 with both sequential and interleave mode
- Internal 4 bank operations with single pulsed /RAS
- tRAS Lock-Out function supported
- Auto refresh and self refresh supported
- 4096 refresh cycles / 64ms
- Full, Half and Matched Impedance(Weak) strength driver option controlled by EMRS
規格
以下是所選零件的基本參數,涉及零件的特性及其所屬類別。
Rohs Code | No | Part Life Cycle Code | Obsolete |
Part Package Code | TSOP2 | Pin Count ! | 66 |
Reach Compliance Code | ECCN Code | EAR99 | |
HTS Code ! | 8542.32.00.24 | Access Mode ! | FOUR BANK PAGE BURST |
Access Time-Max | 0.7 ns | Additional Feature ! | AUTO/SELF REFRESH |
Clock Frequency-Max (fCLK) | 250 MHz | I/O Type | COMMON |
Interleaved Burst Length | 2,4,8 | JESD-30 Code | R-PDSO-G66 |
Length | 22.225 mm | Memory Density | 268435456 bit |
Memory IC Type | DDR1 DRAM | Memory Width | 16 |
Number of Functions | 1 | Number of Ports ! | 1 |
Number of Terminals | 66 | Number of Words | 16777216 words |
Number of Words Code | 16000000 | Operating Mode ! | SYNCHRONOUS |
Operating Temperature-Max | 70 °C | Operating Temperature-Min | |
Organization | 16MX16 | Output Characteristics | 3-STATE |
Package Body Material | PLASTIC/EPOXY | Package Code | TSOP2 |
Package Equivalence Code | TSSOP66,.46 | Package Shape | RECTANGULAR |
Package Style | SMALL OUTLINE, THIN PROFILE | Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Power Supplies ! | 2.5 V | Qualification Status ! | Not Qualified |
Refresh Cycles | 8192 | Seated Height-Max | 1.194 mm |
Self Refresh | YES | Sequential Burst Length | 2,4,8 |
Standby Current-Max | 0.02 A | Supply Current-Max | 0.2 mA |
Supply Voltage-Max (Vsup) | 2.625 V | Supply Voltage-Min (Vsup) | 2.375 V |
Supply Voltage-Nom (Vsup) | 2.5 V | Surface Mount ! | YES |
Technology | CMOS | Temperature Grade ! | COMMERCIAL |
Terminal Form ! | GULL WING | Terminal Pitch ! | 0.65 mm |
Terminal Position | DUAL | Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Width | 10.16 mm |
數據表 PDF
數據表記錄了器件的特性、絕對最大額定值、應用等,這對於作為器件特定應用的整體指南大有裨益。
推薦零件
-
With a pitch of 0.65mm and ROHS compliance, this TSOP2-66 memory chip is ideal for environmentally-conscious projects
製造商: Olimex Ltd. 包裝/箱: TSOP66
6,593 有存貨
貨物週期: 3~7 天
最小訂購量為 1
-
DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66
製造商: HYNIX 包裝/箱: TSOP66
5,212 有存貨
貨物週期: 3~7 天
最小訂購量為 1
-
Synchronous DRAM, 32MX8, 5.4ns, CMOS, PDSO54, 0.875 X 0.400 INCH, 0.80 MM PITCH, LEAD FREE, TSOP2-54
製造商: HYNIX 包裝/箱: TSOP-54
5,172 有存貨
貨物週期: 3~7 天
最小訂購量為 1
-
The HY27US08121B-TPCB is a low-profile flash memory module with a compact form factor of 12x20mm and a height of 1.20mm
製造商: HYNIX 包裝/箱: TSOP-48
3,639 有存貨
貨物週期: 3~7 天
最小訂購量為 1
-
DDR DRAM, 16MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66
製造商: HYNIX 包裝/箱: TSOP-66
5,657 有存貨
貨物週期: 3~7 天
最小訂購量為 1
-
DDR DRAM, 16MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2-66
製造商: HYNIX 包裝/箱: SSOP-66
6,817 有存貨
貨物週期: 3~7 天
最小訂購量為 1
-
DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66
製造商: HYNIX 包裝/箱: TSOP-66
7,594 有存貨
貨物週期: 3~7 天
最小訂購量為 1
-
Synchronous DRAM, 1MX16, 6ns, CMOS, PDSO50, 0.400 X 0.825 INCH, 0.80 MM PITCH, TSOP2-50
製造商: HYNIX 包裝/箱: SOP-20
4,736 有存貨
貨物週期: 3~7 天
最小訂購量為 1
-
5,744 有存貨
貨物週期: 3~7 天
最小訂購量為 1
-
153-ball PBGA flash memory module, with a size of 11.50 x 13 mm and 0.80 mm height
製造商: HYNIX 包裝/箱: BGA-153
4,319 有存貨
貨物週期: 3~7 天
最小訂購量為 1