HY27US08121B-TPCB
The HY27US08121B-TPCB is a low-profile flash memory module with a compact form factor of 12x20mm and a height of 1.20mmHY27US08121B-TPCB
The HY27US08121B-TPCB is a low-profile flash memory module with a compact form factor of 12x20mm and a height of 1.20mm
品質保證
品質保證
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運輸與付款
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服務與包裝
服務與包裝
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例子
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剪膠帶
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管或託盤
HY27US08121B-TPCB 數據表
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目前的價格方案正在編制中。請聯絡我們的客戶服務團隊獲取最新的價格資訊。感謝您的理解和支援!
詳細說明
The HY27US08121B-TPCB is a high-performance 1-gigabit NAND Flash memory device manufactured by Hynix Semiconductor. It features a density of 1Gb organized as 4,194,304 pages of 2,048 bytes each. The device operates on a voltage range of 2.7V to 3.6V and has a typical operating temperature range of -40°C to 85°C.The HY27US08121B-TPCB offers fast program and erase times, with a program time of 200μs per page and an erase time of 2ms per block. It also provides a fast read speed of 50ns per access. The device utilizes a multi-level cell (MLC) architecture, allowing it to store multiple bits per cell and increasing its storage capacity.In terms of reliability, the HY27US08121B-TPCB includes features such as advanced error correction and bad block management to ensure data integrity. It also supports a wide variety of advanced functions such as data protection and security features.
主要特徵
- 8Gb density
- Small form factor
- Low power consumption
- High-performance
- Compatibility with various applications
- 128Mb x 64 configuration
- 64-bit I/O
- Fast read and program speed
- Wide voltage range
- Extended temperature range
應用
- Automotive infotainment systems
- Industrial control systems
- Telecommunications equipment
- Medical devices
- Networking devices
- Military and aerospace applications
- Smartphones and tablets
- Gaming consoles
- Consumer electronics
- Embedded systems
規格
以下是所選零件的基本參數,涉及零件的特性及其所屬類別。
Pbfree Code | Yes | Rohs Code | Yes |
Part Life Cycle Code | Obsolete | Part Package Code | TSOP1 |
Pin Count ! | 48 | Reach Compliance Code | |
ECCN Code | EAR99 | HTS Code ! | 8542.32.00.51 |
Access Time-Max | 18 ns | Command User Interface | YES |
Data Polling | NO | JESD-30 Code | R-PDSO-G48 |
JESD-609 Code | e6 | Length | 18.4 mm |
Memory Density | 536870912 bit | Memory IC Type | FLASH |
Memory Width | 8 | Moisture Sensitivity Level | 3 |
Number of Functions | 1 | Number of Sectors/Size | 4K |
Number of Terminals | 48 | Number of Words | 67108864 words |
Number of Words Code | 64000000 | Operating Mode ! | ASYNCHRONOUS |
Operating Temperature-Max | 70 °C | Operating Temperature-Min | |
Organization | 64MX8 | Package Body Material | PLASTIC/EPOXY |
Package Code | TSOP1 | Package Equivalence Code | TSSOP48,.8,20 |
Package Shape | RECTANGULAR | Package Style | SMALL OUTLINE, THIN PROFILE |
Page Size | 512 words | Parallel/Serial | PARALLEL |
Peak Reflow Temperature (Cel) | 260 | Power Supplies ! | 3/3.3 V |
Programming Voltage ! | 3.3 V | Qualification Status ! | Not Qualified |
Ready/Busy | YES | Seated Height-Max | 1.2 mm |
Sector Size | 16K | Standby Current-Max | 0.00005 A |
Supply Current-Max | 0.03 mA | Supply Voltage-Max (Vsup) | 3.6 V |
Supply Voltage-Min (Vsup) | 2.7 V | Supply Voltage-Nom (Vsup) | 3.3 V |
Surface Mount ! | YES | Technology | CMOS |
Temperature Grade ! | COMMERCIAL | Terminal Finish | TIN BISMUTH |
Terminal Form ! | GULL WING | Terminal Pitch ! | 0.5 mm |
Terminal Position | DUAL | Time@Peak Reflow Temperature-Max (s) | 30 |
Toggle Bit | NO | Type | SLC NAND TYPE |
Width | 12 mm |
Specification Comparison
數據表 PDF
數據表記錄了器件的特性、絕對最大額定值、應用等,這對於作為器件特定應用的整體指南大有裨益。
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