2N1486
Description: Bipolar Transistors - BJT Power BJT (Product 2N1486)2N1486
Description: Bipolar Transistors - BJT Power BJT (Product 2N1486)
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製造商零件號 # : 2N1486
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包裝/封裝: TO-8-3
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零件狀態 : Active
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製造商: Microchip Technology
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產品分類 : Single Bipolar Transistors
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2N1486 數據表
價格 (USD)
數量 | 單價 | 總價 |
---|---|---|
1 | $138.730 | $138.73 |
200 | $55.355 | $11,071.00 |
500 | $53.504 | $26,752.00 |
1000 | $52.591 | $52,591.00 |
這些價格會受到市場波動的影響,需要提交報價才能取得最新價格。
詳細說明
The 2N1486 is a bipolar NPN transistor with a maximum voltage rating of 55V and a maximum current rating of 3A. It is housed in a TO-8 metal can package, which provides efficient heat dissipation and mechanical protection. This transistor is commonly used in various electronic circuits for amplification, switching, and voltage regulation. It has a high current-gain bandwidth product, making it suitable for high-frequency applications such as radio frequency amplifiers. The 2N1486 has three terminals: the emitter, base, and collector. The emitter is the terminal through which current flows out of the transistor. The base is the control terminal that regulates the flow of current between the emitter and collector. The collector is the terminal through which current enters the transistor. When biased correctly, the 2N1486 allows a small current at the base terminal to control a much larger current flowing between the emitter and collector terminals. This amplification property makes it a vital component in audio amplifiers, power supplies, and signal processing circuits. In conclusion, the 2N1486 is a versatile NPN transistor with a high voltage and current rating, making it suitable for a wide range of applications in the field of electronics
主要特徵
- NPN silicon transistor
- High power output
- Low noise and distortion
- Wide frequency range
- Designed for use in audio amplifier and driver applications
- Good thermal stability
- TO-5 metal can package
- Complementary PNP type available (2N1485)
應用
- RF power amplification in industrial and military communication systems
- High-frequency amplification in radar systems
- Amateur radio applications
- Satellite communication systems
- Wireless data transmission systems
- Frequency modulation (FM) and amplitude modulation (AM) broadcasting systems
- Signal booster in electronic devices
- Power amplification in wireless microphone systems
規格
以下是所選零件的基本參數,涉及零件的特性及其所屬類別。
Manufacturer | Microchip | Product Category ! | Bipolar Transistors - BJT |
RoHS | N | Mounting Style | Through Hole |
Package / Case | TO-8-3 | Transistor Polarity | NPN |
Configuration | Single | Collector- Emitter Voltage VCEO Max | 55 V |
Collector- Base Voltage VCBO | 100 V | Emitter- Base Voltage VEBO | 12 V |
Collector-Emitter Saturation Voltage | 750 mV | Maximum DC Collector Current | 3 A |
Pd - Power Dissipation | 1.75 W | Gain Bandwidth Product fT | - |
Minimum Operating Temperature | - 65 C | Maximum Operating Temperature ! | + 200 C |
Brand | Microchip Technology | DC Collector/Base Gain hfe Min | 35 |
DC Current Gain hFE Max | 100 | Product Type ! | BJTs - Bipolar Transistors |
Factory Pack Quantity | 1 | Subcategory | Transistors |
Technology | Si | Unit Weight | 1.661227 oz |
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