FBGA84 相關產品
零件號 | 描述 | 製造商 | 生命週期狀態 | 貨物週期 | 有存貨 | 操作 |
---|---|---|---|---|---|---|
MT47H128M16RT-25E | High-performance DDR3 SDRAM chip for optimized data processing | MICRON | Active | 3~7 Days | 7,115 | |
MT47H32M16NF-25EIT:H | 32 Meg x 16 DDR DRAM | MICRON | ACTIVE | 3~7 Days | 7,889 | |
H5PS1G63JFR-Y5C | Enhancing system reliability and efficiency with robust design | SKHYNIX | 3~7 Days | 4,032 | ||
K4N51163QE-ZC25 | K4N51163QE-ZC25 is a NAND flash memory chip developed by SK Hynix | SAMSUNG | 3~7 Days | 7,591 | ||
MT47H64M16HR-3 IT:G | 84-Pin FBGA Tray Mount DRAM Chip for DDR2 SDRAM | MICRON | 3~7 Days | 4,092 | ||
MT8HTF12864HDY-667E1 | CMOS DDR DRAM Module featuring 128MX64 capacity, 0.45ns speed, and PDMA200 support | MICRON | 3~7 Days | 5,893 | ||
MT47H16M16BG-37E | Offering exceptional performance, this MTHMBG-E chip features a memory size of B, ideal for applications that require high-speed data processin | MICRON | 3~7 Days | 3,461 | ||
K4T1G164QD-ZCE6 | DDR DRAM with 64MX16 capacity and 0.45ns speed, PBGA84 packaging | SAMSUNG | 3~7 Days | 4,597 | ||
K4T1G164QE-HCF8 | This product is a DDR DRAM with a capacity of 64MX16 and a speed of 0.35ns." | SAMSUNG | 3~7 Days | 6,271 | ||
IS43DR16160A-5BBLI | 256Mbit DDR2 SDRAM chip | ISSI | OBSOLETE | 3~7 Days | 3,074 | |
HY5PS1G1631CFP-S6 | Lead-Free Ball Grid Array-84 | HYNIX | 3~7 Days | 7,143 | ||
HY5PS1G831CFP-S6-C | HY5PS1G831CFP-S6-C is a 1Gb DDR3 SDRAM chip designed for high-speed data processing. | HYNIX | 3~7 Days | 5,187 | ||
MT47H64M16HR-3 IT E | MT47H64M16HR-3IT E is a 512MB DDR2 SDRAM chip. | MICRON | 3~7 Days | 3,134 | ||
MT47H32M16NF-25E | IC DRAM 512MBIT PARALLEL 84FBGA | MICRON | 3~7 Days | 3,197 | ||
H5PS1G63EFR-S5C-C | DRAM Chip DDR2 SDRAM 1G-Bit 64M x 16 1.8V 84-Pin FBGA (Alt: H5PS1G63EFR-S5CR) | HYNIX | 3~7 Days | 3,398 | ||
MT47H32M16HR-25EIT | IC DRAM 512MBIT PARALLEL 84FBGA | MICRON | 3~7 Days | 5,645 | ||
MT47H128M16HG-3 | Ddr Dram, 128MX16, 0.45NS, Cmos, PBGA84, 11.50 X 14 Mm, Rohs Compliant, FBGA-84 | MICRON | 3~7 Days | 7,799 | ||
MT47H16M16BG-5E:B | 6M X 16 DDR DRAM 0.6 ns PBGA84 | micron technology | OBSOLETE | 3~7 Days | 5,063 | |
EM68B16CWQD-25H | 32M x 16 Configuration for High Performance | Etron Technology Inc | 3~7 Days | 7,475 |
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