MT8HTF12864HDY-667E1

CMOS DDR DRAM Module featuring 128MX64 capacity, 0.45ns speed, and PDMA200 support
5,893 有效庫存

MT8HTF12864HDY-667E1

有效庫存5,893

CMOS DDR DRAM Module featuring 128MX64 capacity, 0.45ns speed, and PDMA200 support

  • 製造商零件號 # : MT8HTF12864HDY-667E1

  • 包裝/封裝: FBGA84

  • 製造商: MICRON

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MT8HTF12864HDY-667E1 數據表
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詳細說明

Experience reduced data access delays and improved system responsiveness with the CAS latency of 5 cycles offered by this DDR2 SDRAM module. Operating at an energy-efficient voltage of 1.8V, it is suitable for systems that prioritize low power consumption without compromising on performance. The 1GB memory capacity provides ample space for seamless data storage and application usage, meeting the needs of modern computing tasks

主要特徵

  • Capacity: 1GB
  • Technology: DDR2 SDRAM
  • Speed: 667MHz
  • Form Factor: DIMM 240-pin
  • Error Checking: Non-ECC
  • Voltage: 1.8V
  • Low Profile: Yes
  • Module Configuration: 128M x 64

應用

  • Desktop computers
  • Laptops
  • Servers
  • Workstations
  • Gaming systems
  • Industrial applications
  • Networking equipment
  • Medical devices
  • Telecommunications equipment
  • Embedded systems
MICRON Inventory

規格

以下是所選零件的基本參數，涉及零件的特性及其所屬類別。

Rohs Code Yes Part Life Cycle Code Obsolete
Reach Compliance Code ECCN Code EAR99
HTS Code ! 8542.32.00.36 Access Time-Max 0.45 ns
Clock Frequency-Max (fCLK) 333 MHz I/O Type COMMON
JESD-30 Code R-PDMA-N200 Memory Density 8589934592 bit
Memory IC Type DDR DRAM MODULE Memory Width 64
Number of Terminals 200 Number of Words 134217728 words
Number of Words Code 128000000 Operating Temperature-Max 70 °C
Operating Temperature-Min Organization 128MX64
Output Characteristics 3-STATE Package Body Material PLASTIC/EPOXY
Package Code DIMM Package Equivalence Code DIMM200,24
Package Shape RECTANGULAR Package Style MICROELECTRONIC ASSEMBLY
Power Supplies ! 1.8 V Qualification Status ! Not Qualified
Refresh Cycles 8192 Standby Current-Max 0.056 A
Supply Current-Max 2.16 mA Supply Voltage-Nom (Vsup) 1.8 V
Surface Mount ! NO Technology CMOS
Temperature Grade ! COMMERCIAL Terminal Form ! NO LEAD
Terminal Pitch ! 0.6 mm Terminal Position DUAL

數據表 PDF

數據表記錄了器件的特性、絕對最大額定值、應用等，這對於作為器件特定應用的整體指南大有裨益。

初步規格 MT8HTF12864HDY-667E1 PDF 下載

常見問題解答

What is MT8HTF12864HDY-667E1?

The MT8HTF12864HDY-667E1 is a DDR2 SDRAM (Double Data Rate 2 Synchronous Dynamic Random-Access Memory) module designed for use in computer systems and other digital devices. It offers high-speed, high-bandwidth memory access for improved system performance and responsiveness.

How Does MT8HTF12864HDY-667E1 Work?

The MT8HTF12864HDY-667E1 works by providing high-speed data storage and retrieval capabilities for computing systems. It utilizes DDR2 SDRAM technology, allowing data to be transferred on both the rising and falling edges of the clock signal, effectively doubling the data transfer rate compared to traditional SDRAM.

How Many Pins does MT8HTF12864HDY-667E1 have and What are the Functions of the Pinout Configuration?

The MT8HTF12864HDY-667E1 typically features 240-pin DDR2 SDRAM DIMM (Dual In-Line Memory Module) configuration. The pinout configuration includes:

  • Data Lines: Multiple pins for bi-directional data transfer between the memory module and the memory controller.
  • Address Lines: Pins used to specify the address of the data to be written or read.
  • Control Lines: Pins for controlling the data transfer operations and timing.
  • Power and Ground Pins: Pins for providing power supply and ground connections.

What are the Pros and Cons of MT8HTF12864HDY-667E1?

Pros:

  • High Performance: Offers high-speed data transfer and low latency, improving overall system performance.
  • Bandwidth: Provides high memory bandwidth, suitable for memory-intensive applications.
  • Compatibility: Designed to be compatible with systems that support DDR2 SDRAM.
  • Reliability: Offers stable and reliable operation for computing and digital devices.

Cons:

  • Obsolete Technology: DDR2 SDRAM is an older memory technology and may not be suitable for the latest systems.
  • Limited Capacity: Compared to newer memory standards, DDR2 SDRAM modules may offer lower capacity options.
  • Power Consumption: May consume more power compared to newer, more power-efficient memory technologies.

Are There Any Equivalents/Alternatives to MT8HTF12864HDY-667E1 for Recommendation?

Alternatives to the MT8HTF12864HDY-667E1 include DDR3 and DDR4 SDRAM modules, which offer higher data transfer rates and larger capacities. Specific alternatives may include modules from manufacturers such as Samsung, Micron, and Hynix.

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