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產品對比: MT29F2G16AABWP vs MT29F2G08ABAEAH4-IT vs MT29F2G01ABAGDWB-IT:G TR
隱藏相同的屬性
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全部
零件號
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| Manufacturer | MICRON | MICRON | Micron Technology |
| Package | TSOP-48 | FBGA | SON-8 |
| Description | 2 Gigabit Capacity | 3.3V Parallel Interface | NAND Flash SLC 2G 2GX1 UPDFN |
| Stock | 3919 | 6693 | 6467 |
| Organization | 128MX16 | 256MX8 | 2 G x 1 |
| Type | SLC NAND TYPE | SLC NAND TYPE | No Boot Block |
| Rohs Code | Yes | Yes | |
| Part Life Cycle Code | Obsolete | Active | |
| Reach Compliance Code | compliant | ||
| ECCN Code | EAR99 | EAR99 | |
| HTS Code | 8542.32.00.51 | 8542.32.00.51 | |
| Access Time-Max | 30 ns | 20 ns | |
| Command User Interface | YES | YES | |
| JESD-30 Code | R-PDSO-G48 | R-PBGA-B63 | |
| Length | 18.4 mm | 11 mm | |
| Memory Density | 2147483648 bit | 2147483648 bit | |
| Memory IC Type | FLASH | FLASH | |
| Memory Width | 16 | 8 | |
| Number of Functions | 1 | 1 | |
| Number of Sectors/Size | 2K | 2K | |
| Number of Terminals | 48 | 63 | |
| Number of Words | 134217728 words | 268435456 words | |
| Number of Words Code | 128000000 | 256000000 | |
| Operating Mode | ASYNCHRONOUS | ASYNCHRONOUS | |
| Operating Temperature-Max | 70 °C | 85 °C | |
| Operating Temperature-Min | -40 °C | ||
| Package Body Material | PLASTIC/EPOXY | PLASTIC/EPOXY | |
| Package Code | TSOP1 | LFBGA | |
| Package Equivalence Code | TSSOP48,.8,20 | BGA63,10X12,32 | |
| Package Shape | RECTANGULAR | RECTANGULAR | |
| Package Style | SMALL OUTLINE, THIN PROFILE | GRID ARRAY, LOW PROFILE, FINE PITCH | |
| Page Size | 1K words | 2K words | |
| Parallel/Serial | PARALLEL | PARALLEL | |
| Programming Voltage | 2.7 V | 3.3 V | |
| Ready/Busy | YES | YES | |
| Seated Height-Max | 1.2 mm | 1.25 mm | |
| Sector Size | 64K | 128K | |
| Standby Current-Max | 0.00005 A | 0.0001 A | |
| Supply Current-Max | 0.03 mA | 0.035 mA | |
| Supply Voltage-Max (Vsup) | 3.6 V | 3.6 V | |
| Supply Voltage-Min (Vsup) | 2.7 V | 2.7 V | |
| Supply Voltage-Nom (Vsup) | 3.3 V | 3.3 V | |
| Surface Mount | YES | YES | |
| Technology | CMOS | CMOS | |
| Temperature Grade | COMMERCIAL | INDUSTRIAL | |
| Terminal Form | GULL WING | BALL | |
| Terminal Pitch | 0.5 mm | 0.8 mm | |
| Terminal Position | DUAL | BOTTOM | |
| Width | 12 mm | 9 mm | |
| Part Package Code | TSOP1 | ||
| Pin Count | 48 | ||
| Data Polling | NO | ||
| JESD-609 Code | e3 | ||
| Power Supplies | 3/3.3 V | ||
| Qualification Status | Not Qualified | ||
| Terminal Finish | MATTE TIN | ||
| Toggle Bit | NO | ||
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | ||
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | ||
| Product Category | NAND Flash | ||
| RoHS | Details | ||
| Mounting Style | SMD/SMT | ||
| Package / Case | U-PDFN-8 | ||
| Series | MT29F | ||
| Memory Size | 2 Gbit | ||
| Interface Type | SPI | ||
| Timing Type | Asynchronous | ||
| Data Bus Width | 1 bit | ||
| Supply Voltage - Min | 2.7 V | ||
| Supply Voltage - Max | 3.6 V | ||
| Supply Current - Max | 35 mA | ||
| Minimum Operating Temperature | - 40 C | ||
| Maximum Operating Temperature | + 85 C | ||
| Active Read Current - Max | 35 mA | ||
| Brand | Micron | ||
| Maximum Clock Frequency | 133 MHz | ||
| Memory Type | NAND | ||
| Moisture Sensitive | Yes | ||
| Product | NAND Flash | ||
| Product Type | NAND Flash | ||
| Standard | Not Supported | ||
| Factory Pack Quantity | 4000 | ||
| Subcategory | Memory & Data Storage | ||
| Unit Weight | 0.039619 oz |
零件號
關鍵字: MT29F
零件號 "MT29F" 回傅 23 個結果; 所有結果都匹配且頭部為 "MT29F".
| 零件號 | 描述 | 製造商 | 包裝/箱 | 生命週期狀態 | 貨物週期 | 有存貨 | 操作 |
|---|---|---|---|---|---|---|---|
| MT29F4G08ABBDAH4 |
Store more, worry less with Micron Technology's advanced MT29F4G08ABBDAH4 NAND flash memory solution for your digital requirements |
MICRON | VFBGA-63 | 3~7 天 | 4,657.00 | ||
| MT29F4G08AACWC:C |
IC FLASH 4GBIT PARALLEL 48TSOP I |
MICRON | TSOP-48 | 3~7 天 | 6,217.00 | ||
| MT29F4G16ABADAH4-IT:D |
Ideal for Embedded Systems and Devices |
Micron Technology | VFBGA | 3~7 天 | 7,811.00 | ||
| MT29F32G08CBADAWP:D |
2Gbit, 3.3V, 4G x 8, Parallel |
Micron Technology | TFSOP-48 | 3~7 天 | 4,677.00 | ||
| MT29F2G16AADWP-ET:D |
Tray of NAND Flash Parallel 3.3V 2G-bit 48-Pin TSOP |
MICRON | 48-TSOP | 3~7 天 | 5,298.00 | ||
| MT29F64G08CBABAWP:B |
High capacity storage solution |
Micron Technology | TFSOP-48 | 3~7 天 | 4,438.00 | ||
| MT29F32G08ABAAAWP |
The MT29F32G08ABAAAWP is a NAND flash memory chip manufactured by Micron Technology |
MICRON | TSOP-48 | 3~7 天 | 6,268.00 | ||
| MT29F64G08AJABAWP-IT B |
NAND Flash SLC 64G 8GX8 TSOP QDP |
MICRON | TSOP-48 | 3~7 天 | 3,306.00 | ||
| MT29F16G08ABACAWP |
MT29F16G08ABACAWP is a NAND flash memory chip manufactured by Micron Technology |
MICRON | TSSOP48 | 3~7 天 | 3,681.00 | ||
| MT29F128G08AJAAAWP-ITZ |
IC FLASH 128GBIT PAR 48TSOP I |
MICRON | TSOP48 | 3~7 天 | 6,807.00 | ||
| MT29F8G08ABABAWP |
IC FLASH 8GBIT PARALLEL 48TSOP I |
MICRON | TSOP-48 | 3~7 天 | 6,927.00 | ||
| MT29F8G08ABACAWP-IT:C TR |
This product is a NAND Flash memory chip with a Single-Level Cell (SLC) architecture |
Micron Technology | TSOP-48 | ACTIVE | 3~7 天 | 5,800.00 | |
| MT29F4G16ABADAWP:D |
256MB x16 configuration |
Micron Technology | 48-TFSOP | 3~7 天 | 7,611.00 | ||
| MT29F2G16ABBEAHC-IT:E |
Voltage Friendly BGA package |
Micron | VFBGA | 3~7 天 | 7,742.00 | ||
| MT29F8G16ADBDAH4-IT:D |
Parallel 8GB flash memory IC in a 63VFBGA package |
Micron Technology | VFBGA | OBSOLETE | 3~7 天 | 5,632.00 | |
| MT29F2G08ABAEAWP-IT:E TR |
2G-bit Capacity |
Micron Technology | TSOP-48 | 3~7 天 | 3,482.00 | ||
| MT29F8G08ABABAWP:B |
Advanced SLC technology ensures reliable and fast storage solution for various application |
Micron Technology | TSOP-I | OBSOLETE | 3~7 天 | 6,587.00 | |
| MT29F2G01ABAGDWB-IT:G |
UPDFN SLC 2G NAND Flash 2GX1 |
Micron | UDFN8 | ACTIVE | 3~7 天 | 5,777.00 | |
| MT29F2G08ABAEAWP-IT:E |
Reliable and secure non-volatile memory for data logging and recording need |
Micron Technology | TSOP-I | ACTIVE | 3~7 天 | 9,664.00 | |
| MT29F2G08ABAEAWP:E |
Surface Mount MT29F2G08ABAEAWP Memory IC |
Micron | TFSOP-48 | ACTIVE | 3~7 天 | 6,461.00 | |
| MT29F512G08CMCEBJ4-37ITR:E |
High Capacity Storage Device |
MICRON | BGA | NRND | 3~7 天 | 7,782.00 | |
| MT29F4T08EUHAFM4-3T:A |
IC for NAND Flash Memory |
Micron Technology | LBGA | 3~7 天 | 5,084.00 | ||
| MT29F2G08ABAEAWP-IT |
Single-level cell NAND flash memory |
MICRON | TSSOP48 | 3~7 天 | 5,858.00 |