MT29F2G08ABAEAH4-IT

3.3V Parallel Interface
6,693 有效庫存

MT29F2G08ABAEAH4-IT

有效庫存6,693

3.3V Parallel Interface

  • 製造商零件號 # : MT29F2G08ABAEAH4-IT

  • 包裝/封裝: FBGA

  • 製造商: MICRON

  • 產品分類 : Microcontrollers

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服務與包裝

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About After Sales Service

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例子

捲帶式

捲帶式

剪膠帶

剪膠帶

管或託盤

管或託盤

MT29F2G08ABAEAH4-IT 數據表
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詳細說明

General DescriptionMicron NAND Flash devices include an asynchronous data interface for high-perform ance I/O operations. These devices use a highly multiplexed 8-bit bus (DQx) to transfer commands,address, and data. There are five control signals used to implement the asyn chronous data interface: CE#, CLE, ALE, WE#, and RE#. Additional signals control hardware write protection (WP#) and monitor device status (R/B#).Features• Open NAND Flash Interface (ONFI) 2.2-compliant1• Multiple-level cell (MLC) technology• Organization – Page size x8: 8640 bytes (8192 + 448 bytes) – Block size: 256 pages (2048K + 112K bytes) – Plane size: 2 planes x 2048 blocks per plane – Device size: 64Gb: 4096 blocks; 128Gb: 8192 blocks; 256Gb: 16,384 blocks; 512Gb: 32,786 blocks• Synchronous I/O performance – Up to synchronous timing mode 5 – Clock rate: 10ns (DDR) – Read/write throughput per pin: 200 MT/s• Asynchronous I/O performance– Up to asynchronous timing mode 5–tRC/tWC: 20ns (MIN)• Array performance – Read page: 50µs (MAX) – Program page: 1300µs (TYP) – Erase block: 3ms (TYP)• Operating Voltage Range – VCC: 2.7–3.6V – VCCQ: 1.7–1.95V, 2.7–3.6V• Command set: ONFI NAND Flash Protocol• Advanced Command Set – Program cache – Read cache sequential – Read cache random – One-time programmable (OTP) mode – Multi-plane commands – Multi-LUN operations – Read unique ID – Copyback• First block (block address 00h) is valid when shipped from factory. For minimum required ECC, see Error Management (page 109).• RESET (FFh) required as first command after power on• Operation status byte provides software method for detecting – Operation completion – Pass/fail condition – Write-protect status• Data strobe (DQS) signals provide a hardware method for synchronizing data DQ in the synchronous interface• Copyback operations supported within the plane from which data is read• Quality and reliability – Data retention: 10 years – Endurance: 5000 PROGRAM/ERASE cycles• Operating temperature: – Commercial: 0°C to +70°C – Industrial (IT): –40ºC to +85ºC• Package – 52-pad LGA – 48-pin TSOP – 100-ball BGA

主要特徵

  • Open NAND Flash Interface (ONFI) 2.2-compliant1
  • Multiple-level cell (MLC) technology
  • Organization
  • – Page size x8: 8640 bytes (8192 + 448 bytes)
  • – Block size: 256 pages (2048K + 112K bytes)
  • – Plane size: 2 planes x 2048 blocks per plane
  • – Device size: 64Gb: 4096 blocks;
  • 128Gb: 8192 blocks;
  • 256Gb: 16,384 blocks;
  • 512Gb: 32,786 blocks
  • Synchronous I/O performance
  • – Up to synchronous timing mode 5
  • – Clock rate: 10ns (DDR)
  • – Read/write throughput per pin: 200 MT/s
  • Asynchronous I/O performance
  • – Up to asynchronous timing mode 5
  • tRC/tWC: 20ns (MIN)
  • Array performance
  • – Read page: 50µs (MAX)
  • – Program page: 1300µs (TYP)
  • – Erase block: 3ms (TYP)
  • Operating Voltage Range
  • – VCC: 2.7–3.6V
  • – VCCQ: 1.7–1.95V, 2.7–3.6V
  • Command set: ONFI NAND Flash Protocol
  • Advanced Command Set
  • – Program cache
  • – Read cache sequential
  • – Read cache random
  • – One-time programmable (OTP) mode
  • – Multi-plane commands
  • – Multi-LUN operations
  • – Read unique ID
  • – Copyback
  • First block (block address 00h) is valid when shipped
  • from factory. For minimum required ECC, see
  • Error Management (page 109).
  • RESET (FFh) required as first command after power
  • Operation status byte provides software method for
  • detecting
  • – Operation completion
  • – Pass/fail condition
  • – Write-protect status
  • Data strobe (DQS) signals provide a hardware method
  • for synchronizing data DQ in the synchronous
  • interface
  • Copyback operations supported within the plane
  • from which data is read
  • Quality and reliability
  • – Data retention: 10 years
  • – Endurance: 5000 PROGRAM/ERASE cycles
  • Operating temperature:
  • – Commercial: 0°C to +70°C
  • – Industrial (IT): –40ºC to +85ºC
  • Package
  • – 52-pad LGA
  • – 48-pin TSOP
  • – 100-ball BGA
MICRON Inventory

規格

以下是所選零件的基本參數，涉及零件的特性及其所屬類別。

Rohs Code Yes Part Life Cycle Code Active
Reach Compliance Code compliant ECCN Code EAR99
HTS Code ! 8542.32.00.51 Access Time-Max 20 ns
Command User Interface YES JESD-30 Code R-PBGA-B63
Length 11 mm Memory Density 2147483648 bit
Memory IC Type FLASH Memory Width 8
Number of Functions 1 Number of Sectors/Size 2K
Number of Terminals 63 Number of Words 268435456 words
Number of Words Code 256000000 Operating Mode ! ASYNCHRONOUS
Operating Temperature-Max 85 °C Operating Temperature-Min -40 °C
Organization 256MX8 Package Body Material PLASTIC/EPOXY
Package Code LFBGA Package Equivalence Code BGA63,10X12,32
Package Shape RECTANGULAR Package Style GRID ARRAY, LOW PROFILE, FINE PITCH
Page Size 2K words Parallel/Serial PARALLEL
Peak Reflow Temperature (Cel) NOT SPECIFIED Programming Voltage ! 3.3 V
Ready/Busy YES Seated Height-Max 1.25 mm
Sector Size 128K Standby Current-Max 0.0001 A
Supply Current-Max 0.035 mA Supply Voltage-Max (Vsup) 3.6 V
Supply Voltage-Min (Vsup) 2.7 V Supply Voltage-Nom (Vsup) 3.3 V
Surface Mount ! YES Technology CMOS
Temperature Grade ! INDUSTRIAL Terminal Form ! BALL
Terminal Pitch ! 0.8 mm Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED Type SLC NAND TYPE
Width 9 mm

Specification Comparison

MT29F2G08ABAEAH4-IT vs MT29F2G01ABAGDWB-IT:G TR vs MT29F2G08ABAEAWP-IT:E TR MT29F2G16AABWP vs MT29F2G08ABAEAH4-IT vs MT29F2G01ABAGDWB-IT:G TR

數據表 PDF

數據表記錄了器件的特性、絕對最大額定值、應用等，這對於作為器件特定應用的整體指南大有裨益。

初步規格 MT29F2G08ABAEAH4-IT PDF 下載

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