產品對比: MT29F2G08ABAEAH4-IT vs MT29F2G01ABAGDWB-IT:G TR vs MT29F2G08ABAEAWP-IT:E TR
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零件號
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Manufacturer | MICRON | Micron Technology | Micron Technology |
Package | FBGA | SON-8 | TSOP-48 |
Description | 3.3V Parallel Interface | NAND Flash SLC 2G 2GX1 UPDFN | 2G-bit Capacity |
Stock | 6693 | 6467 | 3482 |
Organization | 256MX8 | 2 G x 1 | 256 M x 8 |
Type | SLC NAND TYPE | No Boot Block | No Boot Block |
Product Category | NAND Flash | NAND Flash | |
RoHS | Details | Details | |
Mounting Style | SMD/SMT | SMD/SMT | |
Package / Case | U-PDFN-8 | TSOP-48 | |
Series | MT29F | MT29F | |
Memory Size | 2 Gbit | 2 Gbit | |
Interface Type | SPI | Parallel | |
Timing Type | Asynchronous | Asynchronous | |
Data Bus Width | 1 bit | 8 bit | |
Supply Voltage - Min | 2.7 V | 2.7 V | |
Supply Voltage - Max | 3.6 V | 3.6 V | |
Supply Current - Max | 35 mA | 35 mA | |
Minimum Operating Temperature | - 40 C | - 40 C | |
Maximum Operating Temperature | + 85 C | + 85 C | |
Active Read Current - Max | 35 mA | 35 mA | |
Brand | Micron | Micron | |
Memory Type | NAND | NAND | |
Moisture Sensitive | Yes | Yes | |
Product | NAND Flash | NAND Flash | |
Product Type | NAND Flash | NAND Flash | |
Standard | Not Supported | Not Supported | |
Factory Pack Quantity | 4000 | 1000 | |
Subcategory | Memory & Data Storage | Memory & Data Storage | |
Unit Weight | 0.039619 oz | 0.038801 oz | |
Rohs Code | Yes | ||
Part Life Cycle Code | Active | ||
Reach Compliance Code | compliant | ||
ECCN Code | EAR99 | ||
HTS Code | 8542.32.00.51 | ||
Access Time-Max | 20 ns | ||
Command User Interface | YES | ||
JESD-30 Code | R-PBGA-B63 | ||
Length | 11 mm | ||
Memory Density | 2147483648 bit | ||
Memory IC Type | FLASH | ||
Memory Width | 8 | ||
Number of Functions | 1 | ||
Number of Sectors/Size | 2K | ||
Number of Terminals | 63 | ||
Number of Words | 268435456 words | ||
Number of Words Code | 256000000 | ||
Operating Mode | ASYNCHRONOUS | ||
Operating Temperature-Max | 85 °C | ||
Operating Temperature-Min | -40 °C | ||
Package Body Material | PLASTIC/EPOXY | ||
Package Code | LFBGA | ||
Package Equivalence Code | BGA63,10X12,32 | ||
Package Shape | RECTANGULAR | ||
Package Style | GRID ARRAY, LOW PROFILE, FINE PITCH | ||
Page Size | 2K words | ||
Parallel/Serial | PARALLEL | ||
Peak Reflow Temperature (Cel) | NOT SPECIFIED | ||
Programming Voltage | 3.3 V | ||
Ready/Busy | YES | ||
Seated Height-Max | 1.25 mm | ||
Sector Size | 128K | ||
Standby Current-Max | 0.0001 A | ||
Supply Current-Max | 0.035 mA | ||
Supply Voltage-Max (Vsup) | 3.6 V | ||
Supply Voltage-Min (Vsup) | 2.7 V | ||
Supply Voltage-Nom (Vsup) | 3.3 V | ||
Surface Mount | YES | ||
Technology | CMOS | ||
Temperature Grade | INDUSTRIAL | ||
Terminal Form | BALL | ||
Terminal Pitch | 0.8 mm | ||
Terminal Position | BOTTOM | ||
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | ||
Width | 9 mm | ||
Maximum Clock Frequency | 133 MHz |
零件號
關鍵字: MT29F
零件號 "MT29F" 回傅 22 個結果; 所有結果都匹配且頭部為 "MT29F".
零件號 | 描述 | 製造商 | 包裝/箱 | 生命週期狀態 | 貨物週期 | 有存貨 | 操作 |
---|---|---|---|---|---|---|---|
MT29F4G08ABBDAH4 |
Store more, worry less with Micron Technology's advanced MT29F4G08ABBDAH4 NAND flash memory solution for your digital requirements |
MICRON | VFBGA-63 | 3~7 天 | 4,657.00 | ||
MT29F4G08AACWC:C |
IC FLASH 4GBIT PARALLEL 48TSOP I |
MICRON | TSOP-48 | 3~7 天 | 6,217.00 | ||
MT29F4G16ABADAH4-IT:D |
Ideal for Embedded Systems and Devices |
Micron Technology | VFBGA | 3~7 天 | 7,811.00 | ||
MT29F32G08CBADAWP:D |
2Gbit, 3.3V, 4G x 8, Parallel |
Micron Technology | TFSOP-48 | 3~7 天 | 4,677.00 | ||
MT29F2G16AADWP-ET:D |
Tray of NAND Flash Parallel 3.3V 2G-bit 48-Pin TSOP |
MICRON | 48-TSOP | 3~7 天 | 5,298.00 | ||
MT29F64G08CBABAWP:B |
High capacity storage solution |
Micron Technology | TFSOP-48 | 3~7 天 | 4,438.00 | ||
MT29F32G08ABAAAWP |
The MT29F32G08ABAAAWP is a NAND flash memory chip manufactured by Micron Technology |
MICRON | TSOP-48 | 3~7 天 | 6,268.00 | ||
MT29F64G08AJABAWP-IT B |
NAND Flash SLC 64G 8GX8 TSOP QDP |
MICRON | TSOP-48 | 3~7 天 | 3,306.00 | ||
MT29F16G08ABACAWP |
MT29F16G08ABACAWP is a NAND flash memory chip manufactured by Micron Technology |
MICRON | TSSOP48 | 3~7 天 | 3,681.00 | ||
MT29F128G08AJAAAWP-ITZ |
IC FLASH 128GBIT PAR 48TSOP I |
MICRON | TSOP48 | 3~7 天 | 6,807.00 | ||
MT29F8G08ABABAWP |
IC FLASH 8GBIT PARALLEL 48TSOP I |
MICRON | TSOP-48 | 3~7 天 | 6,927.00 | ||
MT29F8G08ABACAWP-IT:C TR |
This product is a NAND Flash memory chip with a Single-Level Cell (SLC) architecture |
Micron Technology | TSOP-48 | ACTIVE | 3~7 天 | 5,800.00 | |
MT29F4G16ABADAWP:D |
256MB x16 configuration |
Micron Technology | 48-TFSOP | 3~7 天 | 7,611.00 | ||
MT29F2G16ABBEAHC-IT:E |
Voltage Friendly BGA package |
Micron | VFBGA | 3~7 天 | 7,742.00 | ||
MT29F8G16ADBDAH4-IT:D |
Parallel 8GB flash memory IC in a 63VFBGA package |
Micron Technology | VFBGA | OBSOLETE | 3~7 天 | 5,632.00 | |
MT29F8G08ABABAWP:B |
Advanced SLC technology ensures reliable and fast storage solution for various application |
Micron Technology | TSOP-I | OBSOLETE | 3~7 天 | 6,587.00 | |
MT29F2G01ABAGDWB-IT:G |
UPDFN SLC 2G NAND Flash 2GX1 |
Micron | UDFN8 | ACTIVE | 3~7 天 | 5,777.00 | |
MT29F2G08ABAEAWP-IT:E |
Reliable and secure non-volatile memory for data logging and recording need |
Micron Technology | TSOP-I | ACTIVE | 3~7 天 | 9,664.00 | |
MT29F2G08ABAEAWP:E |
Surface Mount MT29F2G08ABAEAWP Memory IC |
Micron | TFSOP-48 | ACTIVE | 3~7 天 | 6,461.00 | |
MT29F512G08CMCEBJ4-37ITR:E |
High Capacity Storage Device |
MICRON | BGA | NRND | 3~7 天 | 7,782.00 | |
MT29F4T08EUHAFM4-3T:A |
IC for NAND Flash Memory |
Micron Technology | LBGA | 3~7 天 | 5,084.00 | ||
MT29F2G08ABAEAWP-IT |
Single-level cell NAND flash memory |
MICRON | TSSOP48 | 3~7 天 | 5,858.00 |