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產品對比: MRFE6VP5150N vs MRFE6VP6600N vs MRFE6VP100H
隱藏相同的屬性
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全部
零件號
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| Manufacturer | MICROSEMI | FREESCALE | FREESCALE |
| Package | TO59 | TO59 | TO59 |
| Description | NXP Semiconductors presents the MRFE6VP5150N, a wideband RF power LDMOS transistor boasting a power range from 1 | 600 W Continuous Wave Power | RF Power LDMOS Transistor capable of operating across a wide frequency range from 1.8 to 2000 MHz, delivering 100 watts of power at 50 volts |
| Stock | 6137 | 5871 | 6643 |
| isExSample | true | true | true |
| salesNum | MRFE6VP5150NR1 | MRFE6VP6600NR3 | MRFE6VP100HR5 |
| leadTime | 12 | 12 | 12 |
| pack_type | REEL | REEL | REEL |
| exclusiveItemType | ITEM_TYPE_SAMPLE | ITEM_TYPE_SAMPLE | ITEM_TYPE_SAMPLE |
| pack_desc | Reel 13" Q2/T3 in Drypack | Reel 13" Q2/T3 in Drypack | Reel 13" Q2/T3 in SmallPack |
| minPackQty | 500 | 250 | 50 |
| status | Not Recommended for New Designs | Not Recommended for New Designs | Not Recommended for New Designs |
零件號
關鍵字: MRFE6
零件號 "MRFE6" 回傅 20 個結果; 所有結果都匹配且頭部為 "MRFE6".
| 零件號 | 描述 | 製造商 | 包裝/箱 | 生命週期狀態 | 貨物週期 | 有存貨 | 操作 |
|---|---|---|---|---|---|---|---|
| MRFE6VP6300H |
Lateral N-Channel Broadband RF Power MOSFET, operating in the frequency range of 1 |
Nxp | SOT1827-1 | 3~7 天 | 7,681.00 | ||
| MRFE6VP5600H |
600 Watt CW Power Output |
Nxp | SOT1829-1 | 3~7 天 | 6,373.00 | ||
| MRFE6VP5300N |
300 W CW Wideband RF power LDMOS transistor, 1.8--600 MHz, 50 V |
Nxp | SOT1736-1 | 3~7 天 | 6,445.00 | ||
| MRFE6S9205HR3 |
Suitable for use in NI880S applications |
NXP USA Inc. | SOT-957A | OBSOLETE | 3~7 天 | 9,031.00 | |
| MRFE6VP8600HSR5 |
MOSFET designed for RF applications with an N-channel structure |
NXP | NI-1230S | Obsolete | 3~7 天 | 7,924.00 | |
| MRFE6S9125NBR1 |
SOT1735 Transistor with Typical Gain of 20.2 dB @ 880 MHz |
Freescale Semiconductor | TO272-4 | Obsolete | 3~7 天 | 6,786.00 | |
| MRFE6S9160HSR3 |
RF MOSFET Transistors HV6E 900MHZ 160W NI780HS |
NXP | NI-780S | Obsolete | 3~7 天 | 9,916.00 | |
| MRFE6S9160HS |
High-power N-Channel RF MOSFET from NXP Semiconductors, designed for CDMA communication systems at 880 MHz, 35 W output power, 28 V |
Nxp | 3~7 天 | 4,422.00 | |||
| MRFE6S9125NR1 |
RF MOSFET N-channel 66V 5-pin TO-270 package with Tape and Reel |
Nxp | TO-270-4 | OBSOLETE | 3~7 天 | 6,402.00 | |
| MRFE6VS25GNR1 |
RF Transistor N-Channel 133V 3-Pin TO-270 GULL T/R |
Nxp | SOT1731-1 | ACTIVE | 3~7 天 | 8,091.00 | |
| MRFE6VP5600HR5 |
VHV6 600W 50V NI1230H RF MOSFET Transistors MRFE6VP5600HR5 |
NXP | NI-1230 | Active | 3~7 天 | 7,152.00 | |
| MRFE6VP5300NR1 |
High-power switching device for robust power control applicatio |
Freescale Semiconductor | SOT1736-1 | Active | 3~7 天 | 9,378.00 | |
| MRFE6VP100HR5 |
High-performance N-channel MOSFET for power application |
NXP | NI-780-4 | Active | 3~7 天 | 8,163.00 | |
| MRFE6VP61K25GSR5 |
RF MOSFET Transistors VHV6 1.25KW ISM NI1230GS |
Nxp Semiconductors | SOT1806-2 | 3~7 天 | 2,500.00 | ||
| MRFE6VP8600HR6 |
Reliable amplifier solution for V and operating conditio |
Nxp Usa Inc. | NI-1230 | 3~7 天 | 7,263.00 | ||
| MRFE6S9045NR1 |
MRFE6S9045NR1 is a high-performance single N-CDMA lateral N-channel broadband RF power MOSFET |
NXP USA Inc. | TO-270AA | OBSOLETE | 3~7 天 | 5,192.00 | |
| MRFE6VS25NR1 |
High Voltage N-Channel RF MOSFET 3-Pin Transistor |
NXP USA Inc. | TO-270AA | ACTIVE | 3~7 天 | 7,836.00 | |
| MRFE6VP5600HR6 |
VHV6 600W 50V RF MOSFET Transistors NI1230H |
NXP USA Inc. | SOT-979A | ACTIVE | 3~7 天 | 6,583.00 | |
| MRFE6S9060NR1 |
Transistor RF FET N-CH 66V 470MHz to 960MHz |
NXP USA Inc. | TO-270AA | ACTIVE | 3~7 天 | 9,110.00 | |
| MRFE6VP6300HR5 |
Trans RF MOSFET N-CH 130V 5-Pin NI-780 T/R |
Nxp | SOT1827-1 | 3~7 天 | 4,806.00 |