產品對比: K4T51163QG-HCE7 vs K4T51163QJ-BCE6 vs K4T51163QQ-BCE7

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零件號
Manufacturer SAMSUNG SAMSUNG SAMSUNG
Package BGA84 BGA-84 BGA
Description This product is a DDR DRAM with a capacity of 32MX16 and operates with a speedy 0 DRAM Chip DDR2 SDRAM 512M-Bit 32Mx16 1.8V 84-Pin FBGA This advanced memory solution provides efficient data transfer and processing capabilities for complex computing tasks"
Stock 3749 5698 4676
Organization 32MX16 32M x 16
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8542.32.00.28
Access Time-Max 0.4 ns
Clock Frequency-Max (fCLK) 400 MHz
I/O Type COMMON
Interleaved Burst Length 4,8
JESD-30 Code R-PBGA-B84
JESD-609 Code e1
Memory Density 536870912 bit
Memory IC Type DDR2 DRAM
Memory Width 16
Moisture Sensitivity Level 3
Number of Terminals 84
Number of Words 33554432 words
Number of Words Code 32000000
Operating Temperature-Max 95 °C
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code FBGA
Package Equivalence Code BGA84,9X15,32
Package Shape RECTANGULAR
Package Style GRID ARRAY, FINE PITCH
Peak Reflow Temperature (Cel) 260
Power Supplies 1.8 V
Qualification Status Not Qualified
Refresh Cycles 8192
Sequential Burst Length 4,8
Standby Current-Max 0.008 A
Supply Current-Max 0.275 mA
Supply Voltage-Nom (Vsup) 1.8 V
Surface Mount YES
Technology CMOS
Temperature Grade OTHER
Terminal Finish TIN SILVER COPPER
Terminal Form BALL
Terminal Pitch 0.8 mm
Terminal Position BOTTOM
Product Category IC Chips
Density 512M
Voltage - Supply 1.7V ~ 1.95V
Operating Temperature 0°C ~ 85°C
Speed 400MHz
Interface Parallel
Voltage - I/O 1.7V, 1.8V
Memory Type DDR2 SDRAM
Package Height 1.2mm
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零件號

關鍵字: K4T51

零件號 "K4T51" 回傅 20 個結果; 所有結果都匹配且頭部為 "K4T51".

零件號 描述 製造商 包裝/箱 生命週期狀態 貨物週期 有存貨 操作
K4T51163QE-ZCE6

0.45 ns latency

SAMSUNG BGA-84 3~7 天 7,555.00
K4T51163QE-ZCD5

Advanced DDR DRAM for reliable computi

SAMSUNG BGA 3~7 天 7,996.00
K4T51083QC

512Mb C-die DDR2 SDRAM

MICRON BGA60 3~7 天 3,250.00
K4T51163QI-HCE6

For use by OEMs and CMs only

Samsung Electronics FBGA OBSOLETE 3~7 天 8,572.00
K4T51163QG-HCE6

High-speed, Mx DDR DRAM memory module with ns access tim

Samsung Semiconductor 3~7 天 6,018.00
K4T51163QN-BCE7TCV

Advanced 1.8V technology for enhanced system reliability

Samsung Electronics FBGA 3~7 天 5,163.00
K4T51163QI-HIE6000

Robust design and construction for rugged environment durability

Samsung Electronics FBGA 3~7 天 3,590.00
K4T51163QI-HCE6T00

High-quality DRAM chip for improved computing performance

Samsung Electronics FBGA 3~7 天 2,674.00
K4T51163QG-HCE6000

DRAM Chip DDR2 SDRAM 512Mbit 32Mx16 1.8V 84-Pin FBGA T/R

Samsung Electronics FBGA OBSOLETE 3~7 天 7,574.00
K4T51163QJ-BCF7000

Fast and reliable performance for data-intensive systems

Samsung Electronics FBGA 3~7 天 3,498.00
K4T51163QI-HCE6000

DDR2 SDRAM Chip

Samsung Electronics FBGA OBSOLETE 3~7 天 6,373.00
K4T51163QC-ZCD5000

Robust DDRSDRAM module for reliable data storage and transfe

Samsung Electronics FBGA 3~7 天 4,838.00
K4T51163QN-BCE7

DDR2 SDRAM Chip

Samsung Electronics FBGA OBSOLETE 3~7 天 6,036.00
K4T51043QB-GCCC

SAMSUNG 60FBGA 3~7 天 7,000.00
K4T51043QB-GCD5

SAMSUNG 60FBGA 3~7 天 7,000.00
K4T51043QB-YCCC

SAMSUNG 60FBGA 3~7 天 2,240.00
K4T51043QB-ZCCC

SAMSUNG 60FBGA 3~7 天 7,000.00
K4T51043QB-ZCD5

SAMSUNG 60FBGA 3~7 天 2,240.00
K4T51043QB-ZCE6

SAMSUNG 60FBGA 3~7 天 2,240.00
K4T51043QC-ZCCC

SAMSUNG 60FBGA 3~7 天 1,130.00