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產品對比: K4T51163QE-ZCD5 vs K4T51163QE-ZCE6 vs K4T51163QG-HCE7
隱藏相同的屬性
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零件號
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| Manufacturer | SAMSUNG | SAMSUNG | SAMSUNG |
| Package | BGA | BGA-84 | BGA84 |
| Description | Advanced DDR DRAM for reliable computi | 0.45 ns latency | This product is a DDR DRAM with a capacity of 32MX16 and operates with a speedy 0 |
| Stock | 7996 | 7555 | 3749 |
| Pbfree Code | Yes | Yes | Yes |
| Rohs Code | Yes | Yes | Yes |
| Part Life Cycle Code | Obsolete | Obsolete | Obsolete |
| Reach Compliance Code | compliant | compliant | compliant |
| ECCN Code | EAR99 | EAR99 | EAR99 |
| HTS Code | 8542.32.00.28 | 8542.32.00.28 | 8542.32.00.28 |
| Access Time-Max | 0.5 ns | 0.45 ns | 0.4 ns |
| Clock Frequency-Max (fCLK) | 266 MHz | 333 MHz | 400 MHz |
| I/O Type | COMMON | COMMON | COMMON |
| Interleaved Burst Length | 4,8 | 4,8 | 4,8 |
| JESD-30 Code | R-PBGA-B90 | R-PBGA-B90 | R-PBGA-B84 |
| JESD-609 Code | e1 | e1 | e1 |
| Memory Density | 536870912 bit | 536870912 bit | 536870912 bit |
| Memory IC Type | DDR2 DRAM | DDR2 DRAM | DDR2 DRAM |
| Memory Width | 16 | 16 | 16 |
| Moisture Sensitivity Level | 3 | 3 | 3 |
| Number of Terminals | 90 | 90 | 84 |
| Number of Words | 33554432 words | 33554432 words | 33554432 words |
| Number of Words Code | 32000000 | 32000000 | 32000000 |
| Operating Temperature-Max | 95 °C | 95 °C | 95 °C |
| Organization | 32MX16 | 32MX16 | 32MX16 |
| Output Characteristics | 3-STATE | 3-STATE | 3-STATE |
| Package Body Material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package Code | FBGA | FBGA | FBGA |
| Package Equivalence Code | BGA90,9X15,32 | BGA90,9X15,32 | BGA84,9X15,32 |
| Package Shape | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package Style | GRID ARRAY, FINE PITCH | GRID ARRAY, FINE PITCH | GRID ARRAY, FINE PITCH |
| Peak Reflow Temperature (Cel) | 260 | 260 | 260 |
| Power Supplies | 1.8 V | 1.8 V | 1.8 V |
| Qualification Status | Not Qualified | Not Qualified | Not Qualified |
| Refresh Cycles | 8192 | 8192 | 8192 |
| Sequential Burst Length | 4,8 | 4,8 | 4,8 |
| Standby Current-Max | 0.008 A | 0.008 A | 0.008 A |
| Supply Current-Max | 0.24 mA | 0.24 mA | 0.275 mA |
| Supply Voltage-Nom (Vsup) | 1.8 V | 1.8 V | 1.8 V |
| Surface Mount | YES | YES | YES |
| Technology | CMOS | CMOS | CMOS |
| Temperature Grade | OTHER | OTHER | OTHER |
| Terminal Finish | TIN SILVER COPPER | TIN SILVER COPPER | TIN SILVER COPPER |
| Terminal Form | BALL | BALL | BALL |
| Terminal Pitch | 0.8 mm | 0.8 mm | 0.8 mm |
| Terminal Position | BOTTOM | BOTTOM | BOTTOM |
零件號
關鍵字: K4T51
零件號 "K4T51" 回傅 20 個結果; 所有結果都匹配且頭部為 "K4T51".
| 零件號 | 描述 | 製造商 | 包裝/箱 | 生命週期狀態 | 貨物週期 | 有存貨 | 操作 |
|---|---|---|---|---|---|---|---|
| K4T51163QQ-BCE7 |
This advanced memory solution provides efficient data transfer and processing capabilities for complex computing tasks" |
SAMSUNG | BGA | 3~7 天 | 4,676.00 | ||
| K4T51163QJ-BCE6 |
DRAM Chip DDR2 SDRAM 512M-Bit 32Mx16 1.8V 84-Pin FBGA |
SAMSUNG | BGA-84 | 3~7 天 | 5,698.00 | ||
| K4T51083QC |
512Mb C-die DDR2 SDRAM |
MICRON | BGA60 | 3~7 天 | 3,250.00 | ||
| K4T51163QI-HCE6 |
For use by OEMs and CMs only |
Samsung Electronics | FBGA | OBSOLETE | 3~7 天 | 8,572.00 | |
| K4T51163QG-HCE6 |
High-speed, Mx DDR DRAM memory module with ns access tim |
Samsung Semiconductor | 3~7 天 | 6,018.00 | |||
| K4T51163QN-BCE7TCV |
Advanced 1.8V technology for enhanced system reliability |
Samsung Electronics | FBGA | 3~7 天 | 5,163.00 | ||
| K4T51163QI-HIE6000 |
Robust design and construction for rugged environment durability |
Samsung Electronics | FBGA | 3~7 天 | 3,590.00 | ||
| K4T51163QI-HCE6T00 |
High-quality DRAM chip for improved computing performance |
Samsung Electronics | FBGA | 3~7 天 | 2,674.00 | ||
| K4T51163QG-HCE6000 |
DRAM Chip DDR2 SDRAM 512Mbit 32Mx16 1.8V 84-Pin FBGA T/R |
Samsung Electronics | FBGA | OBSOLETE | 3~7 天 | 7,574.00 | |
| K4T51163QJ-BCF7000 |
Fast and reliable performance for data-intensive systems |
Samsung Electronics | FBGA | 3~7 天 | 3,498.00 | ||
| K4T51163QI-HCE6000 |
DDR2 SDRAM Chip |
Samsung Electronics | FBGA | OBSOLETE | 3~7 天 | 6,373.00 | |
| K4T51163QC-ZCD5000 |
Robust DDRSDRAM module for reliable data storage and transfe |
Samsung Electronics | FBGA | 3~7 天 | 4,838.00 | ||
| K4T51163QN-BCE7 |
DDR2 SDRAM Chip |
Samsung Electronics | FBGA | OBSOLETE | 3~7 天 | 6,036.00 | |
| K4T51043QB-GCCC |
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SAMSUNG | 60FBGA | 3~7 天 | 7,000.00 | ||
| K4T51043QB-GCD5 |
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SAMSUNG | 60FBGA | 3~7 天 | 7,000.00 | ||
| K4T51043QB-YCCC |
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SAMSUNG | 60FBGA | 3~7 天 | 2,240.00 | ||
| K4T51043QB-ZCCC |
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SAMSUNG | 60FBGA | 3~7 天 | 7,000.00 | ||
| K4T51043QB-ZCD5 |
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SAMSUNG | 60FBGA | 3~7 天 | 2,240.00 | ||
| K4T51043QB-ZCE6 |
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SAMSUNG | 60FBGA | 3~7 天 | 2,240.00 | ||
| K4T51043QC-ZCCC |
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SAMSUNG | 60FBGA | 3~7 天 | 1,130.00 |