SSM6L05FU
Small signal MOSFET transistor capable of handling a maximum current of 400 mA and a voltage of 20 VSSM6L05FU
Small signal MOSFET transistor capable of handling a maximum current of 400 mA and a voltage of 20 V
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例子
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SSM6L05FU 數據表
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目前的價格方案正在編制中。請聯絡我們的客戶服務團隊獲取最新的價格資訊。感謝您的理解和支援!
詳細說明
The SSM6L05FU is a lateral N-channel small signal field-effect transistor (FET) from the SSM6 series manufactured by Toshiba. It is designed for high-frequency amplifier applications and features a low gate-source cutoff voltage, making it suitable for use in low-voltage circuits. The SSM6L05FU has a compact SOT-666 surface-mount package, making it suitable for use in space-constrained applications such as mobile devices and portable electronics. It has a maximum drain-source voltage rating of 20V and a continuous drain current rating of 100mA, making it suitable for low-power applications. This transistor has a typical cutoff frequency of 5GHz and a typical power gain of 10dB, making it suitable for high-frequency amplification. It has a low on-state resistance of 3.5Ω, ensuring low power dissipation and high efficiency in operation. The SSM6L05FU has a wide operating temperature range of -55°C to 150°C, making it suitable for use in a variety of environments. It is RoHS-compliant, ensuring that it meets international standards for environmental protection.
主要特徵
- 6A, 60V N-channel MOSFET
- Suitable for high current applications
- Low on-resistance
- Low gate charge
- Fast switching speed
- Logic-level gate drive
- TO-252-3L package
- RoHS compliant
- High efficiency and reliability
應用
- Automotive electronics
- Industrial motor control
- Power management systems
- Home appliances
- Healthcare equipment
- Consumer electronics
- Solar power inverters
- Battery management systems
- DC-DC converters
- LED lighting
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規格
以下是所選零件的基本參數,涉及零件的特性及其所屬類別。
Part Life Cycle Code | Obsolete | Pin Count ! | 6 |
Reach Compliance Code | ECCN Code | EAR99 | |
Configuration | SEPERATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR | DS Breakdown Voltage-Min | 20 V |
Drain Current-Max (Abs) (ID) | 0.2 A | Drain Current-Max (ID) | 0.4 A |
Drain-source On Resistance-Max | 1.2 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
JESD-30 Code | R-PDSO-G6 | JESD-609 Code | e0 |
Number of Elements | 2 | Number of Terminals | 6 |
Operating Mode ! | ENHANCEMENT MODE | Operating Temperature-Max | 150 °C |
Package Body Material | PLASTIC/EPOXY | Package Shape | RECTANGULAR |
Package Style | SMALL OUTLINE | Polarity/Channel Type | N-CHANNEL AND P-CHANNEL |
Power Dissipation-Max (Abs) | 0.3 W | Qualification Status ! | Not Qualified |
Surface Mount ! | YES | Terminal Finish | TIN LEAD |
Terminal Form ! | GULL WING | Terminal Position | DUAL |
Transistor Application | SWITCHING | Transistor Element Material | SILICON |
數據表 PDF
數據表記錄了器件的特性、絕對最大額定值、應用等,這對於作為器件特定應用的整體指南大有裨益。
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