SSM3K15AMFV,L3F
Product SSM3K15AMFV, L3F, is a MOSFET with specifications of 30V and 100mA, featuring a resistance of 3SSM3K15AMFV,L3F
Product SSM3K15AMFV, L3F, is a MOSFET with specifications of 30V and 100mA, featuring a resistance of 3
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SSM3K15AMFV,L3F 數據表
價格 (USD)
數量 | 單價 | 總價 |
---|---|---|
1 | $0.075 | $0.08 |
200 | $0.030 | $6.00 |
500 | $0.029 | $14.50 |
1000 | $0.028 | $28.00 |
這些價格會受到市場波動的影響,需要提交報價才能取得最新價格。
詳細說明
The SSM3K15AMFV,L3F is a N-channel MOSFET with a maximum drain-source voltage (VDS) of 30V and a continuous drain current (ID) of 100mA. This MOSFET is designed for use in various electronic applications where low power consumption and high efficiency are required. One of the key features of the SSM3K15AMFV,L3F is its very small and compact VESM (Very Extremely Super Mini) package, which makes it ideal for usage in space-constrained designs. This package also helps in reducing the overall footprint of the circuit board, making it suitable for applications where size is a critical factor. In addition, this MOSFET offers a low on-resistance (RDS(on)) which ensures minimal power loss during operation, contributing to overall energy efficiency. The threshold voltage (VGS(th)) of this MOSFET is optimized for low-voltage applications, making it suitable for use in battery-powered devices.
主要特徵
- Low on-resistance
- Low leakage current
- Small package size
- High speed switching
- Low gate drive requirement
- Enhanced ESD protection
- RoHS compliant
應用
- Smartphones
- Tablets
- Laptops
- Portable chargers
- USB power supplies
- Portable electronic devices
- Wireless speakers
- Bluetooth headphones
- Digital cameras
- Power banks
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規格
以下是所選零件的基本參數,涉及零件的特性及其所屬類別。
Manufacturer | Toshiba Semiconductor and Storage | Product Category ! | FETs - Single |
Series | - | Packaging ! | Alternate Packaging |
Package-Case | Surface Mount | Operating-Temperature | VESM |
Mounting-Type | 30V | Supplier-Device-Package | 13.5pF @ 3V |
FET-Type | Logic Level Gate, 2.5V Drive | Power-Max | 1.5V @ 100μA |
Product Status | Active | FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) | Drain to Source Voltage (Vdss) | 30 V |
Current - Continuous Drain (Id) @ 25°C | 100mA (Ta) | Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4V |
Rds On (Max) @ Id, Vgs | 3.6Ohm @ 10mA, 4V | Vgs(th) (Max) @ Id | 1.5V @ 100µA |
Vgs (Max) | ±20V | Input Capacitance (Ciss) (Max) @ Vds | 13.5 pF @ 3 V |
Power Dissipation (Max) | 150mW (Ta) | Operating Temperature ! | 150°C (TJ) |
Mounting Type | Surface Mount | Supplier Device Package | VESM |
Package / Case | SOT-723 | Base Product Number | SSM3K15 |
數據表 PDF
數據表記錄了器件的特性、絕對最大額定值、應用等,這對於作為器件特定應用的整體指南大有裨益。
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