SSM3K02F
SC-59 N-Channel MOSFET, 30V, 1A, TO-236MOD
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SSM3K02F 數據表
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目前的價格方案正在編制中。請聯絡我們的客戶服務團隊獲取最新的價格資訊。感謝您的理解和支援!
詳細說明
The SSM3K02F is a CMOS low Ron, N-channel enhancement mode field-effect transistor (FET) with a low threshold voltage of 0.75V. It is designed for general-purpose switching and power management applications. The device features a maximum drain-source voltage (VDS) of 20V and a continuous drain current (ID) of 0.16A.The SSM3K02F has a low on-resistance (Ron) of 7.5 ohms, making it suitable for low-power, high-efficiency applications. It also has a fast switching speed and a low leakage current, which helps to minimize power loss and improve overall system performance.The transistor is housed in a small Surface Mount Device (SMD) package, which saves board space and simplifies the manufacturing process. It is RoHS compliant and has a halogen-free design, making it environmentally friendly.
主要特徵
- Low on-state resistance
- Small and thin package design
- Enhanced noise immunity
- High-speed switching
- Low gate voltage drive
- ESD protection
- Low leakage current
- Highly reliable
- RoHS compliant
- Applications in portable devices, consumer electronics, and industrial equipment
應用
- Portable electronics such as smartphones, tablets, and laptops
- Battery-powered applications including power banks and portable chargers
- Power management systems for consumer electronics
- Low power devices in Internet of Things (IoT) applications
- Wearable technology and smartwatches
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規格
以下是所選零件的基本參數,涉及零件的特性及其所屬類別。
Part Life Cycle Code | Obsolete | Part Package Code | SOT-23 |
Pin Count ! | 3 | Reach Compliance Code | |
ECCN Code | EAR99 | Additional Feature ! | LOW THRESHOLD |
Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 30 V |
Drain Current-Max (Abs) (ID) | 1 A | Drain Current-Max (ID) | 1 A |
Drain-source On Resistance-Max | 0.25 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 Code | TO-236 | JESD-30 Code | R-PDSO-G3 |
JESD-609 Code | e0 | Number of Elements | 1 |
Number of Terminals | 3 | Operating Mode ! | ENHANCEMENT MODE |
Operating Temperature-Max | 150 °C | Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR | Package Style | SMALL OUTLINE |
Polarity/Channel Type | N-CHANNEL | Power Dissipation-Max (Abs) | 0.2 W |
Qualification Status ! | Not Qualified | Surface Mount ! | YES |
Terminal Finish | TIN LEAD | Terminal Form ! | GULL WING |
Terminal Position | DUAL | Transistor Application | SWITCHING |
Transistor Element Material | SILICON |
數據表 PDF
數據表記錄了器件的特性、絕對最大額定值、應用等,這對於作為器件特定應用的整體指南大有裨益。
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