SIR871DP-T1-GE3
Trans MOSFET P-CH 100V 48A 8-Pin PowerPAK SO EP T/RSIR871DP-T1-GE3
Trans MOSFET P-CH 100V 48A 8-Pin PowerPAK SO EP T/R
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製造商零件號 # : SIR871DP-T1-GE3
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包裝/封裝: POWERPAK-8
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製造商: Siliconix
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產品分類 : Single FETs, MOSFETs
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SIR871DP-T1-GE3 數據表
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目前的價格方案正在編制中。請聯絡我們的客戶服務團隊獲取最新的價格資訊。感謝您的理解和支援!
詳細說明
One of the standout features of the SIR871DP-T1-GE3 is its compact and sleek PowerPAK SO-8 package, which not only enhances thermal efficiency but also ensures optimal performance in a minimal footprint. This MOSFET is well-equipped to handle high peak currents, boasting a maximum junction temperature of 175°C, guaranteeing seamless operation even under demanding conditions
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主要特徵
- A robust MOSFET for reliable power delivery
- Safe and efficient operation in various applications
- High-speed switching and low on-resistance for fast circuits
規格
以下是所選零件的基本參數,涉及零件的特性及其所屬類別。
Product Category ! | MOSFET | RoHS | Details |
REACH | Details | Technology | Si |
Mounting Style | SMD/SMT | Package / Case | PowerPAK-SO-8 |
Transistor Polarity | P-Channel | Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 100 V | Id - Continuous Drain Current | 48 A |
Rds On - Drain-Source Resistance | 28 mOhms | Vgs - Gate-Source Voltage | - 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage | 1.2 V | Qg - Gate Charge | 90 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature ! | + 150 C |
Pd - Power Dissipation | 69 W | Channel Mode | Enhancement |
Tradename | TrenchFET, PowerPAK | Series | SIR |
Brand | Vishay / Siliconix | Configuration | Single |
Height | 1.04 mm | Length | 6.15 mm |
Product Type ! | MOSFET | Factory Pack Quantity | 3000 |
Subcategory | MOSFETs | Width | 5.15 mm |
Unit Weight | 0.017870 oz |
數據表 PDF
數據表記錄了器件的特性、絕對最大額定值、應用等,這對於作為器件特定應用的整體指南大有裨益。
常見問題解答
What is SIR871DP-T1-GE3?
The SIR871DP-T1-GE3 is a dual P-channel PowerPAK surface-mount power MOSFET designed by Vishay Siliconix. It is commonly used in power management applications such as load switching, battery protection, and DC-DC converters.
How Does SIR871DP-T1-GE3 Work?
The SIR871DP-T1-GE3 operates as a dual P-channel MOSFET, allowing for efficient and controllable switching of power in electronic circuits. By controlling the gate voltage relative to the source, the MOSFET can regulate the flow of current between the drain and the source, providing a low-resistance path for power delivery.
How Many Pins does SIR871DP-T1-GE3 have and What are the Functions of the Pinout Configuration?
The SIR871DP-T1-GE3 is housed in a PowerPAK SC-70 package with a pinout configuration that includes:
- G1: Gate pin for channel 1.
- S1: Source pin for channel 1.
- D1: Drain pin for channel 1.
- G2: Gate pin for channel 2.
- S2: Source pin for channel 2.
- D2: Drain pin for channel 2.
What are the Pros and Cons of SIR871DP-T1-GE3?
Pros:
- Low On-Resistance: Provides efficient power switching with low conduction losses.
- Dual Channels: Offers two independent P-channel MOSFETs for versatile power management.
- Compact Package: The PowerPAK SC-70 package is small and space-efficient.
- High Power Handling: Capable of handling moderate to high power levels in various applications.
Cons:
- Drive Voltage Requirements: May require specific gate drive voltage levels for optimal performance.
- Heat Dissipation: Heat management may be necessary to prevent thermal issues due to power dissipation.
- Protection Circuits: Additional protection circuits may be needed for specific applications to ensure reliability.
Are There Any Equivalents/Alternatives to SIR871DP-T1-GE3 for Recommendation?
- An equivalent part to the SIR871DP-T1-GE3 is the SI7439DP-T1-GE3 from Vishay Siliconix.
- Alternatives to the SIR871DP-T1-GE3 include the AON7408 from Alpha & Omega Semiconductor and the BSS84 from Infineon Technologies.
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