SI2323DS-T1-GE3
Details: SI2323DS-T1-GE3 MOSFETs with 20V voltage rating in SOT-23 packageSI2323DS-T1-GE3
Details: SI2323DS-T1-GE3 MOSFETs with 20V voltage rating in SOT-23 package
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SI2323DS-T1-GE3 數據表
價格 (USD)
數量 | 單價 | 總價 |
---|---|---|
1 | $0.400 | $0.40 |
10 | $0.331 | $3.31 |
30 | $0.301 | $9.03 |
100 | $0.264 | $26.40 |
500 | $0.248 | $124.00 |
1000 | $0.238 | $238.00 |
這些價格會受到市場波動的影響,需要提交報價才能取得最新價格。
詳細說明
The SI2323DS-T1-GE3 is a P-channel MOSFET transistor designed for use in a variety of electronic applications. It has a maximum voltage rating of 20V and can handle a continuous current of 3.7A, making it suitable for a range of low-power to medium-power circuits. This MOSFET comes in a SOT23-3 package, which is a small surface mount package that makes it easy to integrate into compact circuit designs. The transistor has a low on-resistance, which helps minimize power losses and improve efficiency in the circuit. The SI2323DS-T1-GE3 is designed for use in applications where space is limited and power efficiency is important. It is commonly used in battery-powered devices, power management circuits, and other applications where low power consumption is crucial.
![SI2323DS-T1-GE3 SI2323DS-T1-GE3](/files/uploads/product/b/4e43ce59-1673-42c6-b62c-08dbbf1058dd.webp)
主要特徵
- Durable Construction for Heavy Loads
- Improved Heat Dissipation
- Suitable for Industrial Automation Applications
應用
- Electronic control units
- Power over Ethernet
- Surge protection devices
規格
以下是所選零件的基本參數,涉及零件的特性及其所屬類別。
Product Category ! | MOSFET | RoHS | Details |
Technology | Si | Mounting Style | SMD/SMT |
Package / Case | SOT-23-3 | Transistor Polarity | P-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 20 V |
Id - Continuous Drain Current | 4.7 A | Rds On - Drain-Source Resistance | 39 mOhms |
Vgs - Gate-Source Voltage | - 8 V, + 8 V | Vgs th - Gate-Source Threshold Voltage | 1 V |
Qg - Gate Charge | 12.5 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature ! | + 150 C | Pd - Power Dissipation | 1.25 W |
Channel Mode | Enhancement | Tradename | TrenchFET |
Series | SI2 | Brand | Vishay Semiconductors |
Configuration | Single | Fall Time | 48 ns |
Height | 1.45 mm | Length | 2.9 mm |
Product Type ! | MOSFET | Rise Time ! | 43 ns |
Factory Pack Quantity | 3000 | Subcategory | MOSFETs |
Transistor Type | 1 P-Channel | Typical Turn-Off Delay Time | 71 ns |
Typical Turn-On Delay Time | 25 ns | Width | 1.6 mm |
Part # Aliases | SI2323DS-T1-BE3 SI2323DS-GE3 | Unit Weight | 0.000282 oz |
數據表 PDF
數據表記錄了器件的特性、絕對最大額定值、應用等,這對於作為器件特定應用的整體指南大有裨益。
常見問題解答
What is SI2323DS-T1-GE3?
The SI2323DS-T1-GE3 is an N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) designed by Vishay Siliconix. It is commonly used for power management, battery protection, and load switching applications in various electronic devices.
How Does SI2323DS-T1-GE3 Work?
The SI2323DS-T1-GE3 works as a voltage-controlled switch or amplifier. When a positive voltage is applied to the gate terminal with respect to the source, it allows current to flow from the drain to the source, effectively turning the MOSFET 'on.' This enables the device to control the flow of current in a circuit, making it suitable for power management and switching applications.
How Many Pins does SI2323DS-T1-GE3 have and What are the Functions of the Pinout Configuration?
The SI2323DS-T1-GE3 is housed in a SOT-23 package with three pins:
- G (Gate): Controls the flow of current through the MOSFET.
- D (Drain): Connects to the load or the power supply, depending on the application.
- S (Source): Connects to ground or the circuit common.
What are the Pros and Cons of SI2323DS-T1-GE3?
Pros:
- Low On-Resistance: Provides efficient current conduction with minimal voltage drop.
- Small Package: The SOT-23 package is compact and suitable for space-constrained designs.
- High Switching Speed: Enables fast response and efficient power management.
- Low Gate Threshold Voltage: Easily driven by low-voltage control signals.
Cons:
- Static Sensitivity: MOSFETs are susceptible to damage from electrostatic discharge (ESD) without proper handling.
- Temperature Sensitivity: Performance characteristics can be affected by temperature variations.
Are There Any Equivalents/Alternatives to SI2323DS-T1-GE3 for Recommendation?
- Alternatives to the SI2323DS-T1-GE3 include the AO3400A from Alpha & Omega Semiconductor and the BSS138 from ON Semiconductor.
- Equivalents to the SI2323DS-T1-GE3 include the DMG2305UX from Diodes Incorporated and the NDP6020P from ON Semiconductor.
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