SI2306BDS-T1-E3

Name: SI2306BDS-T1-E3
Rating: 4.5 (10 reviews)

Trans MOSFET N-CH 30V 3.16A 3-Pin SOT-23 T/R

6,192 有效庫存

SI2306BDS-T1-E3

有效庫存6,192

Trans MOSFET N-CH 30V 3.16A 3-Pin SOT-23 T/R

製造商零件號 # : SI2306BDS-T1-E3
包裝/封裝: SOT23-3
製造商: Siliconix
產品分類 : Single FETs, MOSFETs

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SI2306BDS-T1-E3 數據表

價格 (USD)

數量	單價	總價
1	$0.433	$0.43
10	$0.352	$3.52
30	$0.316	$9.48
100	$0.274	$27.40
500	$0.216	$108.00
1000	$0.206	$206.00

這些價格會受到市場波動的影響，需要提交報價才能取得最新價格。

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詳細說明

The SI2306BDS-T1-E3 N-Channel 30 V (D-S) MOSFET belongs to the MOSFETs class crafted by Vishay Siliconix. Engineered to serve a wide range of applications including automotive, industrial, and consumer electronics. This SI2306BDS-T1-E3 extends its utility to power supplies, motor control circuits, DC-DC converters, and other demanding applications, showcasing high current density, fast switching times, and low rds(on) while also addressing crucial precautions for thermal management and electromagnetic interference mitigation.

主要特徵

N-Channel MOSFET with 30 V Drain-to-Source Voltage (Vdss)
Current - Continuous Drain (Id) of 3.16A @ 25°C
Drive Voltage (Max Rds On, Min Rds On) up to 10V and 4.5V
Rds On (Max) of 47mOhm @ 3.5A, 10V
Vgs(th) (Max) of 3V @ 250μA
Gate Charge (Qg) of 4.5 nC @ 5V
Operating Temperature range of -55°C to 150°C (TJ)

應用

Automotive: power supplies, motor control circuits, DC-DC converters
Industrial: industrial automation, robotics, HVAC systems
Consumer Electronics: audio equipment, LED lighting, appliances

規格

以下是所選零件的基本參數，涉及零件的特性及其所屬類別。

Product Category !	MOSFET	RoHS	Details
Technology	Si	Mounting Style	SMD/SMT
Package / Case	SOT-23-3	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	30 V
Id - Continuous Drain Current	3.16 A	Rds On - Drain-Source Resistance	47 mOhms
Vgs - Gate-Source Voltage	- 20 V, + 20 V	Vgs th - Gate-Source Threshold Voltage	1 V
Qg - Gate Charge	3 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature !	+ 150 C	Pd - Power Dissipation	750 mW
Channel Mode	Enhancement	Tradename	TrenchFET
Series	SI2	Brand	Vishay Semiconductors
Configuration	Single	Fall Time	6 ns
Forward Transconductance - Min	7 S	Height	1.45 mm
Length	2.9 mm	Product Type !	MOSFET
Rise Time !	12 ns	Factory Pack Quantity	3000
Subcategory	MOSFETs	Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	14 ns	Typical Turn-On Delay Time	7 ns
Width	1.6 mm	Part # Aliases	SI2306BDS-T1-BE3 SI2306BDS-E3
Unit Weight	0.000282 oz

數據表 PDF

數據表記錄了器件的特性、絕對最大額定值、應用等，這對於作為器件特定應用的整體指南大有裨益。

初步規格 SI2306BDS-T1-E3 PDF 下載

常見問題解答

What is SI2306BDS-T1-E3?

The SI2306BDS-T1-E3 is an N-channel MOSFET transistor designed by Vishay Siliconix. It is commonly used in various electronic circuits for switching and amplification purposes due to its small size and low on-resistance.

How Does SI2306BDS-T1-E3 Work?

The SI2306BDS-T1-E3 operates as a field-effect transistor (FET), where the gate voltage controls the flow of current between the source and drain terminals. By applying a voltage to the gate terminal, the transistor can switch on or off, allowing or restricting the flow of current through the device.

How Many Pins does SI2306BDS-T1-E3 have and What are the Functions of the Pinout Configuration?

The SI2306BDS-T1-E3 is typically housed in a SOT-23 package, which consists of three pins:

Gate (G): The pin that controls the flow of current through the transistor.
Drain (D): The pin where the current flows out of the transistor.
Source (S): The pin where the current flows into the transistor.

What are the Pros and Cons of SI2306BDS-T1-E3?

Pros:

Small Size: The SOT-23 package is compact, making it suitable for space-constrained designs.
Low On-Resistance: Provides efficient current conduction with low power dissipation.
Wide Voltage Range: Can handle a broad range of voltages, making it versatile in various applications.
Fast Switching Speed: Allows for rapid switching operations in electronic circuits.
Cost-Effective: Offers a cost-effective solution for switching and amplification needs.

Cons:

Temperature Sensitivity: The performance of the transistor may vary with temperature fluctuations.
Gate Voltage Limit: Operating beyond the specified gate voltage may lead to device failure.
Drive Voltage Requirements: May require specific gate drive voltages for optimal performance.

Are There Any Equivalents/Alternatives to SI2306BDS-T1-E3 for Recommendation?

Equivalent parts to the SI2306BDS-T1-E3 include the DMN2300UDM-7 from Diodes Incorporated and the NTGS3136NT1G from ON Semiconductor.
Alternatives to the SI2306BDS-T1-E3 are the BS170 from Fairchild Semiconductor and the IRF5305 from Infineon Technologies.